| Patent | Date |
|---|
Using Aluminum As Etch Stop Layer
App 20210151671 - Narayanan; Sundar ; et al. | 2021-05-20 |
Using aluminum as etch stop layer
Grant 10,873,023 - Narayanan , et al. December 22, 2 | 2020-12-22 |
Memory stack liner comprising dielectric block layer material
Grant 10,749,110 - Narayanan , et al. A | 2020-08-18 |
Resistive Random Access Memory And Fabrication Techniques
App 20200259081 - A1 | 2020-08-13 |
Regulating interface layer formation for two-terminal memory
Grant 10,693,062 - Narayanan , et al. | 2020-06-23 |
Liner layer for dielectric block layer
Grant 10,522,754 - Narayanan , et al. Dec | 2019-12-31 |
Integrative resistive memory in backend metal layers
Grant 10,319,908 - Narayanan , et al. | 2019-06-11 |
Scalable silicon based resistive memory device
Grant 10,290,801 - Narayanan , et al. | 2019-05-14 |
Recessed high voltage metal oxide semiconductor transistor for RRAM cell
Grant 10,115,819 - Gee , et al. October 30, 2 | 2018-10-30 |
Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
Grant 10,096,653 - Narayanan , et al. October 9, 2 | 2018-10-09 |
Flatness of memory cell surfaces
Grant 10,062,845 - Gee , et al. August 28, 2 | 2018-08-28 |
Liner Layer For Dielectric Block Layer
App 20170365780 - Narayanan; Sundar ; et al. | 2017-12-21 |
Using Aluminum As Etch Stop Layer
App 20170288139 - Narayanan; Sundar ; et al. | 2017-10-05 |
Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
Grant 9,741,765 - Narayanan , et al. August 22, 2 | 2017-08-22 |
Monolithic memory comprising 1T1R code memory and 1TnR storage class memory
Grant 9,697,874 - Asnaashari , et al. July 4, 2 | 2017-07-04 |
Regulating Interface Layer Formation For Two-terminal Memory
App 20170162783 - Narayanan; Sundar ; et al. | 2017-06-08 |
Resistive random access memory (RRAM) cell and method for forming the RRAM cell
Grant 9,595,670 - Gee , et al. March 14, 2 | 2017-03-14 |
Recessed High Voltage Metal Oxide Semiconductor Transistor For Rram Cell
App 20160351625 - Gee; Harry Yue ; et al. | 2016-12-01 |
Mitigating damage from a chemical mechanical planarization process
Grant 9,437,814 - Gee , et al. September 6, 2 | 2016-09-06 |
Method for surface roughness reduction after silicon germanium thin film deposition
Grant 9,425,046 - Gee , et al. August 23, 2 | 2016-08-23 |
Low temperature in-situ doped silicon-based conductor material for memory cell
Grant 9,343,668 - Maxwell , et al. May 17, 2 | 2016-05-17 |
Regulating interface layer growth with N.sub.2O for two-terminal memory
Grant 9,209,396 - Narayanan December 8, 2 | 2015-12-08 |
Integrative Resistive Memory In Backend Metal Layers
App 20150318333 - Narayanan; Sundar ; et al. | 2015-11-05 |
Monolithically Integrated Resistive Memory Using Integrated-circuit Foundry Compatible Processes
App 20150243886 - Narayanan; Sundar ; et al. | 2015-08-27 |
Scalable Silicon Based Resistive Memory Device
App 20150228893 - Narayanan; Sundar ; et al. | 2015-08-13 |
Regulating Interface Layer Growth With N2o For Two-terminal Memory
App 20140335675 - NARAYANAN; Sundar | 2014-11-13 |
Low Temperature In-situ Doped Silicon-based Conductor Material For Memory Cell
App 20140264250 - MAXWELL; Steve ; et al. | 2014-09-18 |
Oxide-nitride stack gate dielectric
Grant 8,445,381 - Ramkumar , et al. May 21, 2 | 2013-05-21 |
Oxide-nitride stack gate dielectric
Grant 7,371,637 - Ramkumar , et al. May 13, 2 | 2008-05-13 |
Oxide-nitride Stack Gate Dielectric
App 20080093680 - Ramkumar; Krishnaswamy ; et al. | 2008-04-24 |
Removing whisker defects
Grant 7,351,663 - Kabansky , et al. April 1, 2 | 2008-04-01 |
Selective oxidation of gate stack
Grant 7,189,652 - Blosse , et al. March 13, 2 | 2007-03-13 |
Method of making uniform oxide layer
Grant 7,172,914 - Narayanan February 6, 2 | 2007-02-06 |
Method of forming nitrided oxide in a hot wall single wafer furnace
Grant 7,094,707 - Ramkumar , et al. August 22, 2 | 2006-08-22 |
Method of forming a narrow gate, and product produced thereby
Grant 6,964,929 - Narayanan , et al. November 15, 2 | 2005-11-15 |
Deuterium incorporated nitride
Grant 6,943,126 - Narayanan , et al. September 13, 2 | 2005-09-13 |
Method and structure for determining a concentration profile of an impurity within a semiconductor layer
Grant 6,905,893 - Narayanan , et al. June 14, 2 | 2005-06-14 |
Oxide-nitride stack gate dielectric
App 20050067663 - Ramkumar, Krishnaswamy ; et al. | 2005-03-31 |
Nitride spacer formation
Grant 6,803,321 - Blosse , et al. October 12, 2 | 2004-10-12 |
Method for growing ultra thin nitrided oxide
Grant 6,803,330 - Ramkumar , et al. October 12, 2 | 2004-10-12 |
Method for and structure formed from fabricating a relatively deep isolation structure
Grant 6,794,269 - Gopalan , et al. September 21, 2 | 2004-09-21 |
Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall
Grant 6,774,012 - Narayanan August 10, 2 | 2004-08-10 |
Formation of a shallow trench isolation structure in integrated circuits
Grant 6,773,975 - Ramkumar , et al. August 10, 2 | 2004-08-10 |
Method and structure for determining a concentration profile of an impurity within a semiconductor layer
Grant 6,664,120 - Narayanan , et al. December 16, 2 | 2003-12-16 |
Novel self monitoring process for ultra thin gate oxidation
App 20030073255 - Narayanan, Sundar ; et al. | 2003-04-17 |
Method for growing ultra thin nitrided oxide
App 20030073290 - Ramkumar, Krishnaswamy ; et al. | 2003-04-17 |
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