Patent | Date |
---|
Method of manufacturing a semiconductor device having a porous, low-k dielectric layer Grant 9,224,593 - Ahn , et al. December 29, 2 | 2015-12-29 |
Integrated circuit devices with crack-resistant fuse structures Grant 8,569,862 - Ahn , et al. October 29, 2 | 2013-10-29 |
Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layer Grant 8,524,615 - Ahn , et al. September 3, 2 | 2013-09-03 |
Integrated Circuit Devices With Crack-resistant Fuse Structures App 20130193552 - Ahn; Sang-Hoon ;   et al. | 2013-08-01 |
Methods of forming integrated circuit devices with crack-resistant fuse structures Grant 8,404,579 - Ahn , et al. March 26, 2 | 2013-03-26 |
Method of fabricating semiconductor device Grant 8,298,910 - Nam , et al. October 30, 2 | 2012-10-30 |
Method of Manufacturing a Semiconductor Device Having a Porous, Low-K Dielectric Layer App 20120178253 - Ahn; Sang-Hoon ;   et al. | 2012-07-12 |
Method Of Forming Hardened Porous Dielectric Layer And Method Of Fabricating Semiconductor Device Having Hardened Porous Dielectric Layer App 20120083117 - Ahn; Sang-Hoon ;   et al. | 2012-04-05 |
Apparatus For Manufacturing Semiconductor Device And Method Of Manufacturing Semiconductor Device Using The Same App 20110263117 - Nam; Sang-Don ;   et al. | 2011-10-27 |
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same Grant 8,026,543 - Song , et al. September 27, 2 | 2011-09-27 |
Methods Of Forming Integrated Circuit Devices With Crack-resistant Fuse Structures App 20110136332 - Ahn; Sang-Hoon ;   et al. | 2011-06-09 |
Process For Preparing Intermediate Compound For Synthesizing An Antiulcerant App 20110071302 - Kim; Dong Yeon ;   et al. | 2011-03-24 |
Method Of Fabricating Semiconductor Device App 20100248471 - Nam; Sang-Don ;   et al. | 2010-09-30 |
Methods of forming metal contact structures and methods of fabricating phase-change memory devices using the same Grant 7,622,379 - Choi , et al. November 24, 2 | 2009-11-24 |
Ferroelectric memory devices having expanded plate lines Grant 7,560,760 - Kim , et al. July 14, 2 | 2009-07-14 |
Semiconductor Devices Having Phase Change Memory Cells, Electronic Systems Employing The Same And Methods Of Fabricating The Same App 20090101881 - Song; Yoon-Jong ;   et al. | 2009-04-23 |
Method for forming ferroelectric memory device Grant 7,517,703 - Son , et al. April 14, 2 | 2009-04-14 |
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same Grant 7,482,616 - Song , et al. January 27, 2 | 2009-01-27 |
Ferroelectric Memory Devices Having Expanded Plate Lines App 20080025065 - Kim; Hyun-Ho ;   et al. | 2008-01-31 |
Ferroelectric memory devices having expanded plate lines Grant 7,285,810 - Kim , et al. October 23, 2 | 2007-10-23 |
Method for forming ferroelectric memory device App 20070243641 - Son; Yoon-Ho ;   et al. | 2007-10-18 |
Memory Devices Employing Ferroelectric Layer as Information Storage Elements and Methods of Fabricating the Same App 20070158731 - Bae; Byoung-Jae ;   et al. | 2007-07-12 |
Methods of fabricating ferroelectric memory devices having expanded plate lines Grant 7,208,367 - Kim , et al. April 24, 2 | 2007-04-24 |
Methods of fabricating phase changeable semiconductor memory devices including multi-plug conductive structures and related devices App 20060076641 - Cho; Byeong-Ok ;   et al. | 2006-04-13 |
Ferroelectric memory device and method of forming the same App 20060027848 - Son; Yoon-Ho ;   et al. | 2006-02-09 |
Methods of forming metal contact structures and methods of fabricating phase-change memory devices using the same App 20060024950 - Choi; Suk-Hun ;   et al. | 2006-02-02 |
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same App 20050263829 - Song, Yoon-Jong ;   et al. | 2005-12-01 |
Ferroelectric memory devices with expanded plate line and methods in fabricating the same Grant 6,952,028 - Lee , et al. October 4, 2 | 2005-10-04 |
Ferroelectric memory devices including protection adhesion layers and methods of forming the same App 20050185486 - Lee, Kyu-Mann ;   et al. | 2005-08-25 |
Methods of fabricating ferroelectric memory devices having expanded plate lines App 20050117382 - Kim, Hyun-Ho ;   et al. | 2005-06-02 |
Ferroelectric memory devices including protection adhesion layers and methods of forming the same App 20050094452 - Lee, Kyu-Mann ;   et al. | 2005-05-05 |
Ferroelectric memory devices having expanded plate lines App 20050035384 - Kim, Hyun-Ho ;   et al. | 2005-02-17 |
Ferroelectric memory devices having expanded plate lines Grant 6,844,583 - Kim , et al. January 18, 2 | 2005-01-18 |
Ferroelectric memory devices with expanded plate line and methods of fabricating the same App 20040124455 - Lee, Kyu-Mann ;   et al. | 2004-07-01 |
Ferroelectric memory device and method of fabricating the same App 20030057464 - Nam, Sang-Don | 2003-03-27 |
Method for manufacturing an electrode of a capacitor Grant 6,500,763 - Kim , et al. December 31, 2 | 2002-12-31 |
Ferroelectric memory devices having expanded plate lines and methods of fabricating the same App 20020196653 - Kim, Hyun-Ho ;   et al. | 2002-12-26 |
Capacitor of semiconductor device Grant 6,380,579 - Nam , et al. April 30, 2 | 2002-04-30 |
Method for manufacturing an electrode of a capacitor App 20010005631 - Kim, Jin-won ;   et al. | 2001-06-28 |
Method for forming capacitor of semiconductor device using high temperature oxidation Grant 6,248,640 - Nam June 19, 2 | 2001-06-19 |