NAKATSUKA; Osamu
Patent Applications and Registrations
Patent applications and USPTO patent grants for NAKATSUKA; Osamu.The latest application filed is for "method of forming semiconductor thin film".
- NAKATSUKA; Osamu - Aichi JP
- Nakatsuka; Osamu - Nagoya JP
- Nakatsuka, Osamu - Nagoya City JP
- Nakatsuka, Osamu - Nagoya-shi JP
| Patent | Date |
|---|---|
| Method Of Forming Semiconductor Thin Film App 20150371850 - KUROSAWA; Masashi ; et al. | 2015-12-24 |
| Substrate for epitaxial growth, process for producing the same, and multi-layered film structure App 20060011916 - Sakai; Akira ; et al. | 2006-01-19 |
| Electrode for p-type SiC Grant 6,943,376 - Nakatsuka , et al. September 13, 2 | 2005-09-13 |
| Method for fabricating a silicide film, multilayered intermediate structure and multilayered structure App 20050189652 - Nakatsuka, Osamu ; et al. | 2005-09-01 |
| Method for fabricating a thin line structure, multilayered structure and multilayered intermediate structure App 20040166329 - Sakai, Akira ; et al. | 2004-08-26 |
| Method for fabricating a SiGe film, substrate for epitaxial growth and multilayered structure App 20040137735 - Sakai, Akira ; et al. | 2004-07-15 |
| Electrode for p-type sic App 20040016929 - Nakatsuka, Osamu ; et al. | 2004-01-29 |
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