Nakatani; Yoshinobu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nakatani; Yoshinobu.The latest application filed is for "magnetic tunnel junction device and magnetic resistance memory device".

Company Profile

1.6.7

Nakatani; Yoshinobu - Yokohama JP
Nakatani; Yoshinobu - Funabashi JP
Nakatani; Yoshinobu - Tokyo JP
Nakatani; Yoshinobu - Funabashi-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetic tunnel junction device and magnetic resistance memory device Grant 10,840,435 - Sonobe , et al. November 17, 2	2020-11-17
Magnetic Tunnel Junction Device And Magnetic Resistance Memory Device App 20200144482 - Sonobe; Yoshiaki ; et al.	2020-05-07
Ferromagnetic thin wire element Grant 8,345,473 - Ono , et al. January 1, 2	2013-01-01
Core-rotating element of ferromagnetic dot and information memory element using the core of ferromagnetic dot Grant 7,952,915 - Ono , et al. May 31, 2	2011-05-31
Ferromagnetic Thin Wire Element App 20110069541 - Ono; Teruo ; et al.	2011-03-24
Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell Grant 7,630,231 - Miltat , et al. December 8, 2	2009-12-08
Core-Rotating Element of Ferromagnetic Dot and Information Memory Element Using the Core of Ferromagnetic Dot App 20090180311 - Ono; Teruo ; et al.	2009-07-16
Hybrid Memory Cell for Spin-Polarized Electron Current Induced Switching and Writing/Reading Process Using Such Memory Cell App 20080094881 - Miltat; Jacques ; et al.	2008-04-24
Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell Grant 7,315,467 - Miltat , et al. January 1, 2	2008-01-01
Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell App 20070081382 - Miltat; Jacques ; et al.	2007-04-12
Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell App 20060146598 - Miltat; Jacques ; et al.	2006-07-06
Hybrid Memory Cell For Spin-polarized Electron Current Induced Switching And Writing/reading Process Using Such Memory Cell App 20060146601 - Miltat; Jacques ; et al.	2006-07-06
Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell Grant 7,061,797 - Miltat , et al. June 13, 2	2006-06-13

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