NAKAO; Motoi

Patent Applications and Registrations

Patent applications and USPTO patent grants for NAKAO; Motoi.The latest application filed is for "fluorescent diamond and method for producing same".

Company Profile

0.7.8

NAKAO; Motoi - Kitakyushu-shi JP
Nakao; Motoi - Osaka JP
Nakao; Motoi - Miyanohigashi-machi Kissyoin JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Fluorescent Diamond And Method For Producing Same App 20210395607 - NAKAO; Motoi ; et al.	2021-12-23
Manufacturing method of monocrystalline gallium nitride localized substrate Grant 7,393,763 - Izumi , et al. July 1, 2	2008-07-01
Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate Grant 7,128,788 - Izumi , et al. October 31, 2	2006-10-31
Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate Grant 7,084,049 - Izumi , et al. August 1, 2	2006-08-01
Manufacturing device for buried insulating layer type single crystal silicon carbide substrate Grant 7,077,875 - Izumi , et al. July 18, 2	2006-07-18
Method for manufacturing buried insulating layer type single crystal silicon carbide substrate Grant 6,927,144 - Izumi , et al. August 9, 2	2005-08-09
Manufacturing method of monocrystalline gallium nitride localized substrate App 20050148108 - Izumi, Katsutoshi ; et al.	2005-07-07
Manufacturing device for buried insulating layer type single crystal silicon carbide substrate App 20050136611 - Izumi, Katsutoshi ; et al.	2005-06-23
Method for Manufacturing Buried Insulating Layer Type Single Crystal Silicon Carbide Substrate and Manufacturing Device for the Same App 20040191966 - IZUMI, Katsutoshi ; et al.	2004-09-30
Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate App 20040173154 - Izumi, Katsutoshi ; et al.	2004-09-09
Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same Grant 6,773,508 - Izumi , et al. August 10, 2	2004-08-10
Monocrystalline gallium nitride localized substrate and manufacturing method thereof App 20040099871 - Izumi, Katsutoshi ; et al.	2004-05-27
Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate and manufacturing apparatus thereof App 20030148586 - Izumi, Katsutoshi ; et al.	2003-08-07
Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same App 20020185058 - Izumi, Katsutoshi ; et al.	2002-12-12
Material evaluation method Grant 6,053,035 - Nomura , et al. April 25, 2	2000-04-25

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