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name:-0.019995927810669
name:-0.00039100646972656
Nakamichi; Masaru Patent Filings

Nakamichi; Masaru

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nakamichi; Masaru.The latest application filed is for "method for producing beryllium solution, method for producing beryllium, method for producing beryllium hydroxide, method for producing beryllium oxide, and beryllium oxide".

Company Profile
0.19.20
  • Nakamichi; Masaru - Chiba-shi JP
  • Nakamichi; Masaru - Hitachinaka JP
  • Nakamichi; Masaru - Tokyo JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method For Producing Beryllium Solution, Method For Producing Beryllium, Method For Producing Beryllium Hydroxide, Method For Producing Beryllium Oxide, And Beryllium Oxide
App 20220298021 - Nakamichi; Masaru ;   et al.
2022-09-22
Semiconductor integrated circuit device with reduced leakage current
Grant 9,530,485 - Osada , et al. December 27, 2
2016-12-27
Semiconductor Integrated Circuit Device With Reduced Leakage Current
App 20150357026 - OSADA; Kenichi ;   et al.
2015-12-10
Semiconductor integrated circuit device with reduced leakage current
Grant 9,111,636 - Osada , et al. August 18, 2
2015-08-18
Semiconductor Integrated Circuit Device with Reduced Leakage Current
App 20150155031 - OSADA; Kenichi ;   et al.
2015-06-04
Semiconductor integrated circuit device with reduced leakage current
Grant 8,797,791 - Osada , et al. August 5, 2
2014-08-05
Semiconductor Integrated Circuit Device With Reduced Leakage Current
App 20130229860 - Osada; Kenichi ;   et al.
2013-09-05
Semiconductor integrated circuit device with reduced leakage current
Grant 8,437,179 - Osada , et al. May 7, 2
2013-05-07
Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device
Grant 8,390,048 - Sakai , et al. March 5, 2
2013-03-05
Semiconductor Integrated Circuit Device With Reduced Leakage Current
App 20120257443 - Osada; Kenichi ;   et al.
2012-10-11
Semiconductor integrated circuit device with reduced leakage current
Grant 8,232,589 - Osada , et al. July 31, 2
2012-07-31
Semiconductor Integrated Circuit Device with Reduced Leakage Current
App 20120113709 - Osada; Kenichi ;   et al.
2012-05-10
Semiconductor integrated circuit device with reduced leakage current
Grant 8,125,017 - Osada , et al. February 28, 2
2012-02-28
Semiconductor integrated circuit device with reduced leakage current
App 20110215414 - Osada; Kenichi ;   et al.
2011-09-08
Semiconductor integrated circuit device with reduced leakage current
Grant 7,964,484 - Osada , et al. June 21, 2
2011-06-21
Method Of Manufacturing A Nonvolatile Semiconductor Memory Device, And A Nonvolatile Semiconductor Memory Device
App 20110024820 - SAKAI; Takeshi ;   et al.
2011-02-03
Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device
Grant 7,863,135 - Sakai , et al. January 4, 2
2011-01-04
Method Of Manufacturing A Nonvolatile Semiconductor Memory Device, And A Nonvolatile Semiconductor Memory Device
App 20100144108 - SAKAI; Takeshi ;   et al.
2010-06-10
Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device
Grant 7,663,176 - Sakai , et al. February 16, 2
2010-02-16
Semiconductor integrated circuit device with reduced leakage current
App 20090269899 - OSADA; Kenichi ;   et al.
2009-10-29
Semiconductor integrated circuit device with reduced leakage current
Grant 7,569,881 - Osada , et al. August 4, 2
2009-08-04
Semiconductor integrated circuit device with reduced leakage current
App 20080203437 - Osada; Kenichi ;   et al.
2008-08-28
Method Of Manufacturing A Nonvolatile Semiconductor Memory Device, And A Nonvolatile Semiconductor Memory Device
App 20080203466 - SAKAI; Takeshi ;   et al.
2008-08-28
Method Of Manufacturing A Nonvolatile Semiconductor Memory Device, And A Nonvolatile Semiconductor Memory Device
App 20080206975 - SAKAI; Takeshi ;   et al.
2008-08-28
Semiconductor integrated circuit device with reduced leakage current
Grant 7,388,238 - Osada , et al. June 17, 2
2008-06-17
Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device
Grant 7,371,631 - Sakai , et al. May 13, 2
2008-05-13
Semiconductor device and method of manufacturing the same
App 20080029825 - Saito; Kentaro ;   et al.
2008-02-07
Semiconductor integrated circuit device with reduced leakage current
App 20060226449 - Osada; Kenichi ;   et al.
2006-10-12
Semiconductor integrated circuit device with reduced leakage current
Grant 7,087,942 - Osada , et al. August 8, 2
2006-08-08
Semiconductor integrated circuit device
Grant 7,045,864 - Funayama , et al. May 16, 2
2006-05-16
Semiconductor integrated circuit device with reduced leakage current
App 20060076610 - Osada; Kenichi ;   et al.
2006-04-13
Semiconductor integrated circuit device with reduced leakage current
Grant 6,998,674 - Osada , et al. February 14, 2
2006-02-14
Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device
App 20060003508 - Sakai; Takeshi ;   et al.
2006-01-05
Semiconductor integrated circuit device with reduced leakage current
App 20050174141 - Osada, Kenichi ;   et al.
2005-08-11
Semiconductor integrated circuit device with reduced leakage current
Grant 6,885,057 - Osada , et al. April 26, 2
2005-04-26
Semiconductor integrated circuit device
App 20030006433 - Funayama, Kota ;   et al.
2003-01-09
Semiconductor integrated circuit device with reduced leakage current
App 20020179940 - Osada, Kenichi ;   et al.
2002-12-05

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