Nakagawa; Osamu Samuel

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nakagawa; Osamu Samuel.The latest application filed is for "process for high-dielectric constant metal-insulator metal capacitor in vlsi multi-level metallization systems".

Company Profile

0.6.9

Nakagawa; Osamu Samuel - Redwood City CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Designing layout for internet datacenter cooling Grant 7,313,503 - Nakagawa , et al. December 25, 2	2007-12-25
System and method to reduce leakage power in an electronic device Grant 6,981,231 - Xie , et al. December 27, 2	2005-12-27
Process for high-dielectric constant metal-insulator metal capacitor in VLSI multi-level metallization systems App 20040082175 - Nakagawa, Osamu Samuel	2004-04-29
Method for reducing current surge using multi-stage ramp shunting Grant 6,661,281 - Nakagawa , et al. December 9, 2	2003-12-09
Partial swing low power CMOS logic circuits Grant 6,621,305 - Nakagawa , et al. September 16, 2	2003-09-16
System and method to reduce leakage power in an electronic device App 20030163792 - Xie, Weize ; et al.	2003-08-28
Designing layout for internet datacenter cooling App 20030158718 - Nakagawa, Osamu Samuel ; et al.	2003-08-21
Method for reducing current surge using multi-stage ramp shunting App 20030098742 - Nakagawa, Osamu Samuel ; et al.	2003-05-29
System for improving circuit simulations by utilizing a simplified circuit model based on effective capacitance and inductance values Grant 6,567,960 - Chang , et al. May 20, 2	2003-05-20
System and method for predictive power ramping App 20030084353 - Chang, Norman ; et al.	2003-05-01
System for improving circuit simulations by utilizing a simplified circuit model based on effective capacitance and inductance values App 20030070148 - Chang, Norman ; et al.	2003-04-10
Partial swing low power CMOS logic circuits App 20030030467 - Nakagawa, Osamu Samuel ; et al.	2003-02-13
High-dielectric constant metal-insulator metal capacitor in VLSI multi-level metallization systems App 20030001188 - Nakagawa, Osamu Samuel	2003-01-02
Process for high-dielectric constant metal-insulator metal capacitor in VLSI multi-level metallization systems App 20030003665 - Nakagawa, Osamu Samuel	2003-01-02
Ramp loading circuit for reducing current surges Grant 6,462,607 - Nakagawa October 8, 2	2002-10-08

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.