Nakagawa; Akio
Patent Applications and Registrations
Patent applications and USPTO patent grants for Nakagawa; Akio.The latest application filed is for "semiconductor device".
Company Profile
3.147.76
- Nakagawa; Akio - Chigasaki JP
- NAKAGAWA; Akio - Chigasaki-shi JP
- NAKAGAWA; Akio - Chigasaki-city JP
- Nakagawa; Akio - Kanagawa JP
- Nakagawa; Akio - Yokohama JP
- Nakagawa; Akio - Kanagawa-ken JP
- Nakagawa; Akio - Yokohama-shi JP
- Nakagawa; Akio - Fujisawa JP
- Nakagawa; Akio - Kyoto JP
- Nakagawa; Akio - Fujisawa-shi JP
- Nakagawa; Akio - Kyoto-shi JP
- Nakagawa, Akio - Kyoto-Fu JP
- Nakagawa; Akio - Tokyo JP
- Nakagawa; Akio - Hiratsuka JP
- Nakagawa, Akio - Hiratsuka-shi JP
- Nakagawa; Akio - Kawasaki JP
- Nakagawa; Akio - Itami JP
- Nakagawa; Akio - Amherst MA
Patent Activity
| Patent | Date |
|---|---|
| Semiconductor device Grant 10,916,628 - Sakurai , et al. February 9, 2 | 2021-02-09 |
| Semiconductor device Grant 10,910,486 - Ikura , et al. February 2, 2 | 2021-02-02 |
| Semiconductor device Grant 10,707,300 - Sakurai , et al. | 2020-07-07 |
| Semiconductor Device App 20190312101 - SAKURAI; Yosuke ; et al. | 2019-10-10 |
| Semiconductor Device App 20190312105 - SAKURAI; Yosuke ; et al. | 2019-10-10 |
| Semiconductor Device App 20190312134 - IKURA; Yoshihiro ; et al. | 2019-10-10 |
| Method of manufacturing a semiconductor device having two types of gate electrodes Grant 10,297,683 - Kobayashi , et al. | 2019-05-21 |
| Semiconductor device having schottky electrode connected to anode region Grant 10,229,970 - Ogawa , et al. | 2019-03-12 |
| Semiconductor Device And Method Of Manufacturing A Semiconductor Device App 20180158939 - KOBAYASHI; Yusuke ; et al. | 2018-06-07 |
| Semiconductor device having first and second gate electrodes Grant 9,899,503 - Kobayashi , et al. February 20, 2 | 2018-02-20 |
| Semiconductor device Grant 9,711,628 - Kobayashi , et al. July 18, 2 | 2017-07-18 |
| Semiconductor Device App 20170018659 - Ogawa; Eri ; et al. | 2017-01-19 |
| Semiconductor Device And Method Of Manufacturing A Semiconductor Device App 20160365434 - KOBAYASHI; Yusuke ; et al. | 2016-12-15 |
| Insulated Gate Bipolar Transistor and Production Method Thereof App 20160300938 - Tonari; Kazuhiko ; et al. | 2016-10-13 |
| Information processing apparatus, information processing method, and storage medium Grant 9,292,777 - Nakagawa , et al. March 22, 2 | 2016-03-22 |
| Semiconductor Device App 20160064476 - KOBAYASHI; Yusuke ; et al. | 2016-03-03 |
| Lateral insulated gate bipolar transistor Grant 9,214,536 - Takahashi , et al. December 15, 2 | 2015-12-15 |
| Semiconductor device Grant 8,981,826 - Nakamura , et al. March 17, 2 | 2015-03-17 |
| Data processing apparatus and control method for controlling clock frequency based on calculated frequency-to-response-time ratios Grant 8,972,769 - Nakagawa , et al. March 3, 2 | 2015-03-03 |
| Semiconductor Device App 20140319576 - KOBAYASHI; Yusuke ; et al. | 2014-10-30 |
| Current sensor, inverter circuit, and semiconductor device having the same Grant 8,854,033 - Shiraki , et al. October 7, 2 | 2014-10-07 |
| Semiconductor Device App 20140240015 - NAKAMURA; Kazutoshi ; et al. | 2014-08-28 |
| Semiconductor Device Having Lateral Diode App 20140225234 - YAMAMOTO; Takao ; et al. | 2014-08-14 |
| Semiconductor device Grant 8,760,206 - Nakamura , et al. June 24, 2 | 2014-06-24 |
| Semiconductor device having lateral diode Grant 8,742,534 - Yamamoto , et al. June 3, 2 | 2014-06-03 |
| Information Processing Apparatus, Information Processing Method, And Storage Medium App 20140132979 - Nakagawa; Akio ; et al. | 2014-05-15 |
| Information processing apparatus, information processing method, and storage medium Grant 8,707,132 - Nakagawa , et al. April 22, 2 | 2014-04-22 |
| Lateral Insulated Gate Bipolar Transistor App 20140070271 - TAKAHASHI; Shigeki ; et al. | 2014-03-13 |
| Semiconductor Device App 20130270910 - NAKAMURA; Kazutoshi ; et al. | 2013-10-17 |
| Semiconductor device Grant 8,497,720 - Nakamura , et al. July 30, 2 | 2013-07-30 |
| Image processing apparatus and method for managing margin data Grant 8,411,988 - Nakagawa , et al. April 2, 2 | 2013-04-02 |
| Lateral insulated-gate bipolar transistor Grant 8,354,691 - Tokura , et al. January 15, 2 | 2013-01-15 |
| Semiconductor Device App 20120256607 - NAKAMURA; Kazutoshi ; et al. | 2012-10-11 |
| Semiconductor device Grant 8,248,128 - Nakamura , et al. August 21, 2 | 2012-08-21 |
| Semiconductor Device With Lateral Element App 20120119318 - TOKURA; Norihito ; et al. | 2012-05-17 |
| Lateral Insulated-gate Bipolar Transistor App 20120061726 - TOKURA; Norihito ; et al. | 2012-03-15 |
| Information Processing Apparatus, Information Processing Method, And Storage Medium App 20120047418 - Nakagawa; Akio ; et al. | 2012-02-23 |
| Semiconductor Device Having Lateral Diode App 20120032313 - YAMAMOTO; Takao ; et al. | 2012-02-09 |
| Current Sensor, Inverter Circuit, And Semiconductor Device Having The Same App 20110298446 - SHIRAKI; Satoshi ; et al. | 2011-12-08 |
| Lateral Insulated Gate Bipolar Transistor App 20110291157 - TAKAHASHI; Shigeki ; et al. | 2011-12-01 |
| Semiconductor device Grant 8,049,270 - Akiyama , et al. November 1, 2 | 2011-11-01 |
| Image encoding apparatus and control method thereof using prediction encoding and pixel classification Grant 8,031,954 - Nakagawa , et al. October 4, 2 | 2011-10-04 |
| Semiconductor Device App 20110221409 - NAKAMURA; Kazutoshi ; et al. | 2011-09-15 |
| Data Processing Apparatus And Control Method Thereof App 20110197089 - Nakagawa; Akio ; et al. | 2011-08-11 |
| Semiconductor device Grant 7,973,580 - Nakamura , et al. July 5, 2 | 2011-07-05 |
| Semiconductor Device App 20110102040 - NAKAMURA; Kazutoshi ; et al. | 2011-05-05 |
| Semiconductor device Grant 7,893,744 - Nakamura , et al. February 22, 2 | 2011-02-22 |
| Semiconductor device Grant 7,868,418 - Nakagawa January 11, 2 | 2011-01-11 |
| Insulated gate bipolar transistor Grant 7,821,043 - Nakagawa October 26, 2 | 2010-10-26 |
| Semiconductor device Grant 7,663,186 - Ono , et al. February 16, 2 | 2010-02-16 |
| Semiconductor module Grant 7,633,153 - Shimokawa , et al. December 15, 2 | 2009-12-15 |
| Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof Grant 7,579,669 - Nakamura , et al. August 25, 2 | 2009-08-25 |
| Trench-gated MOSFET including schottky diode therein Grant 7,564,097 - Ono , et al. July 21, 2 | 2009-07-21 |
| Semiconductor Device App 20090179681 - Nakamura; Kazutoshi ; et al. | 2009-07-16 |
| Electric power unit operating in continuous and discontinuous conduction modes and control method therefor Grant 7,557,545 - Naka , et al. July 7, 2 | 2009-07-07 |
| Semiconductor module Grant 7,514,783 - Shimokawa , et al. April 7, 2 | 2009-04-07 |
| Pupil reaction ascertaining device and fatigue recovery promoting device Grant 7,503,654 - Nakagawa March 17, 2 | 2009-03-17 |
| Image Processing Apparatus And Method App 20090034861 - Nakagawa; Akio ; et al. | 2009-02-05 |
| Image Encoding Apparatus And Control Method Thereof App 20080292197 - Nakagawa; Akio ; et al. | 2008-11-27 |
| Semiconductor Device App 20080251838 - Ono; Syotaro ; et al. | 2008-10-16 |
| Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate Grant 7,432,579 - Matsudai , et al. October 7, 2 | 2008-10-07 |
| Semiconductor Device App 20080185640 - NAKAGAWA; Akio | 2008-08-07 |
| Semiconductor Device App 20080099837 - AKIYAMA; Miwako ; et al. | 2008-05-01 |
| Semiconductor device Grant 7,358,566 - Nakagawa April 15, 2 | 2008-04-15 |
| Semiconductor Device App 20080035992 - KAWAGUCHI; Yusuke ; et al. | 2008-02-14 |
| Insulated Gate Bipolar Transistor And Method For Manufacturing Same App 20070290237 - NAKAGAWA; Akio | 2007-12-20 |
| Semiconductor Module App 20070257708 - Shimokawa; Kazuo ; et al. | 2007-11-08 |
| Semiconductor Module App 20070257376 - Shimokawa; Kazuo ; et al. | 2007-11-08 |
| Pupil Reaction Ascertaining Device and Fatigue Recovery Promoting Device App 20070242223 - Nakagawa; Akio | 2007-10-18 |
| Trench-gated Mosfet Including Schottky Diode Therein App 20070194372 - Ono; Syotaro ; et al. | 2007-08-23 |
| Trench-gated MOSFET including schottky diode therein Grant 7,230,297 - Ono , et al. June 12, 2 | 2007-06-12 |
| Semiconductor device having a vertical MOS trench gate structure Grant 7,227,225 - Ono , et al. June 5, 2 | 2007-06-05 |
| Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof App 20070063307 - Nakamura; Kazutoshi ; et al. | 2007-03-22 |
| Electric power unit operating in continuous and discontinuous conduction modes and control method therefor App 20070013351 - Naka; Toshiyuki ; et al. | 2007-01-18 |
| Semiconductor device App 20070007589 - Nakagawa; Akio | 2007-01-11 |
| Semiconductor device App 20070001263 - Nakagawa; Akio | 2007-01-04 |
| Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof Grant 7,138,698 - Nakamura , et al. November 21, 2 | 2006-11-21 |
| MOS transistor having an offset region Grant 7,115,946 - Kawaguchi , et al. October 3, 2 | 2006-10-03 |
| Semiconductor device having trench gate structure and manufacturing method thereof App 20060138535 - Ono; Syotaro ; et al. | 2006-06-29 |
| Semiconductor device having trench gate structure and manufacturing method thereof Grant 7,061,047 - Ono , et al. June 13, 2 | 2006-06-13 |
| Offset-gate-type semiconductor device Grant 7,061,060 - Yasuhara , et al. June 13, 2 | 2006-06-13 |
| Power MOSFET device Grant 7,061,048 - Kawaguchi , et al. June 13, 2 | 2006-06-13 |
| Insulated gate semiconductor device Grant 7,034,357 - Matsudai , et al. April 25, 2 | 2006-04-25 |
| Offset-gate-type semiconductor device Grant 7,026,214 - Yasuhara , et al. April 11, 2 | 2006-04-11 |
| Semiconductor module App 20060055432 - Shimokawa; Kazuo ; et al. | 2006-03-16 |
| Semiconductor device App 20050287744 - Ono, Syotaro ; et al. | 2005-12-29 |
| Semiconductor device Grant 6,977,414 - Nakamura , et al. December 20, 2 | 2005-12-20 |
| Semiconductor device Grant RE38,907 - Matsudai , et al. December 6, 2 | 2005-12-06 |
| Trench MOSFET App 20050258479 - Ono, Syotaro ; et al. | 2005-11-24 |
| Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof App 20050179472 - Nakamura, Kazutoshi ; et al. | 2005-08-18 |
| Semiconductor device Grant 6,914,294 - Nakamura , et al. July 5, 2 | 2005-07-05 |
| MOS field effect transistor with reduced on-resistance App 20050127440 - Yasuhara, Norio ; et al. | 2005-06-16 |
| Semiconductor device with horizontal MOSFET and schottky barrier diode provided on single substrate App 20050098845 - Matsudai, Tomoko ; et al. | 2005-05-12 |
| Nasolacrimal duct tube used for lacrimal duct reformation operation, and nasolacrimal duct tube instrument Grant 6,878,165 - Makino April 12, 2 | 2005-04-12 |
| High withstand voltage semiconductor device Grant 6,879,005 - Yamaguchi , et al. April 12, 2 | 2005-04-12 |
| Vertical-type power MOSFET with a gate formed in a trench Grant 6,878,992 - Kawaguchi , et al. April 12, 2 | 2005-04-12 |
| Offset-gate-type semiconductor device App 20050056890 - Yasuhara, Norio ; et al. | 2005-03-17 |
| MOS field effect transistor with reduced on-resistance Grant 6,864,533 - Yasuhara , et al. March 8, 2 | 2005-03-08 |
| Semiconductor device having trench gate structure and manufacturing method thereof App 20050029586 - Ono, Syotaro ; et al. | 2005-02-10 |
| Semiconductor device having verical MOS gate structure and method of manufacturing the same App 20050001264 - Ono, Syotaro ; et al. | 2005-01-06 |
| Semiconductor device Grant 6,838,730 - Kawaguchi , et al. January 4, 2 | 2005-01-04 |
| Semiconductor Device App 20040256668 - Kawaguchi, Yusuke ; et al. | 2004-12-23 |
| High withstand voltage semiconductor device App 20040251499 - Yamaguchi, Yoshihiro ; et al. | 2004-12-16 |
| Semiconductor device Grant 6,818,945 - Kawaguchi , et al. November 16, 2 | 2004-11-16 |
| Power mosfet device App 20040164350 - Kawaguchi, Yusuke ; et al. | 2004-08-26 |
| Semiconductor device App 20040159891 - Nakamura, Kazutoshi ; et al. | 2004-08-19 |
| Trigger switch Grant 6,740,830 - Sato , et al. May 25, 2 | 2004-05-25 |
| Insulated gate semiconductor device App 20040089895 - Matsudai, Tomoko ; et al. | 2004-05-13 |
| Power MOSFET device Grant 6,720,618 - Kawaguchi , et al. April 13, 2 | 2004-04-13 |
| Cable mounting structure Grant 6,705,574 - Nakagawa , et al. March 16, 2 | 2004-03-16 |
| High-voltage semiconductor device used as switching element or the like Grant 6,690,085 - Nakagawa , et al. February 10, 2 | 2004-02-10 |
| Punch through type power device Grant 6,686,613 - Matsudai , et al. February 3, 2 | 2004-02-03 |
| High voltage semiconductor device having two buffer layer Grant 6,683,343 - Matsudai , et al. January 27, 2 | 2004-01-27 |
| Semiconductor device App 20030235942 - Nakamura, Kazutoshi ; et al. | 2003-12-25 |
| Insulated gate semiconductor device Grant 6,664,591 - Matsudai , et al. December 16, 2 | 2003-12-16 |
| Semiconductor device App 20030227052 - Ono, Syotaro ; et al. | 2003-12-11 |
| Key switch Grant 6,657,147 - Tsutsui , et al. December 2, 2 | 2003-12-02 |
| Offset-gate-type semiconductor device App 20030173620 - Yasuhara, Norio ; et al. | 2003-09-18 |
| Semiconductor device and method of manufacturing the same Grant 6,620,653 - Matsudai , et al. September 16, 2 | 2003-09-16 |
| Punch through type power device App 20030168718 - Matsudai, Tomoko ; et al. | 2003-09-11 |
| High voltage semiconductor device capable of increasing a switching speed Grant 6,617,641 - Nakagawa , et al. September 9, 2 | 2003-09-09 |
| Semiconductor device improved in ESD reliability Grant 6,614,077 - Nakamura , et al. September 2, 2 | 2003-09-02 |
| Field effect transistor Grant 6,614,089 - Nakamura , et al. September 2, 2 | 2003-09-02 |
| Semiconductor device Grant 6,605,844 - Nakamura , et al. August 12, 2 | 2003-08-12 |
| Power MOSFET device App 20030089947 - Kawaguchi, Yusuke ; et al. | 2003-05-15 |
| Offset-gate-type semiconductor device Grant 6,552,389 - Yasuhara , et al. April 22, 2 | 2003-04-22 |
| Insulated gate semiconductor device App 20030071305 - Matsudai, Tomoko ; et al. | 2003-04-17 |
| Cable mounting structure App 20030052234 - Nakagawa, Akio ; et al. | 2003-03-20 |
| Pressure sensitive sensor App 20030043014 - Nakazawa, Tetsuzo ; et al. | 2003-03-06 |
| Trigger switch App 20030042122 - Sato, Takashi ; et al. | 2003-03-06 |
| Key switch App 20030038021 - Tsutsui, Takaki ; et al. | 2003-02-27 |
| High-voltage semiconductor device used as switching element or the like App 20030015771 - Nakagawa, Akio ; et al. | 2003-01-23 |
| Semiconductor device Grant 6,452,231 - Nakagawa , et al. September 17, 2 | 2002-09-17 |
| Vertical-type power MOSFET with a gate formed in a trench App 20020125528 - Kawaguchi, Yusuke ; et al. | 2002-09-12 |
| High voltage semiconductor device and method for manufacturing the same App 20020117712 - Matsudai, Tomoko ; et al. | 2002-08-29 |
| High voltage semiconductor device App 20020100934 - Nakagawa, Akio ; et al. | 2002-08-01 |
| Offset-gate-type semiconductor device App 20020100951 - Yasuhara, Norio ; et al. | 2002-08-01 |
| MOS transistor having an offset region App 20020050619 - Kawaguchi, Yusuke ; et al. | 2002-05-02 |
| Semiconductor device and method of manufacturing the same App 20020048855 - Matsudai, Tomoko ; et al. | 2002-04-25 |
| Semiconductor device App 20020030238 - Nakamura, Kazutoshi ; et al. | 2002-03-14 |
| MOS field effect transistor with reduced on-resistance App 20020030226 - Yasuhara, Norio ; et al. | 2002-03-14 |
| Field effect transistor App 20020030225 - Nakamura, Kazutoshi ; et al. | 2002-03-14 |
| Semiconductor device improved in ESD reliability App 20010025961 - Nakamura, Kazutoshi ; et al. | 2001-10-04 |
| Power semiconductor device Grant 6,297,534 - Kawaguchi , et al. October 2, 2 | 2001-10-02 |
| High-breakdown-voltage semiconductor device Grant 6,259,136 - Kawaguchi , et al. July 10, 2 | 2001-07-10 |
| High breakdown voltage semiconductor device including first and second semiconductor elements Grant 6,211,549 - Funaki , et al. April 3, 2 | 2001-04-03 |
| High breakdown voltage semiconductor device Grant 6,163,051 - Nakagawa , et al. December 19, 2 | 2000-12-19 |
| Semiconductor device Grant 6,133,607 - Funaki , et al. October 17, 2 | 2000-10-17 |
| Trench gate MOSFET Grant 6,118,149 - Nakagawa , et al. September 12, 2 | 2000-09-12 |
| Semiconductor device having lateral IGBT Grant 6,064,086 - Nakagawa , et al. May 16, 2 | 2000-05-16 |
| Silicon on Insulator semiconductor device with increased withstand voltage Grant 6,049,109 - Omura , et al. April 11, 2 | 2000-04-11 |
| Conductivity modulated MOSFET Grant 6,025,622 - Nakagawa , et al. February 15, 2 | 2000-02-15 |
| Integrated circuit device Grant 5,994,739 - Nakagawa , et al. November 30, 1 | 1999-11-30 |
| Method of manufacturing vertical power device Grant 5,985,708 - Nakagawa , et al. November 16, 1 | 1999-11-16 |
| High-breakdown-voltage semiconductor device Grant 5,932,897 - Kawaguchi , et al. August 3, 1 | 1999-08-03 |
| Lateral IGBT Grant 5,920,087 - Nakagawa , et al. July 6, 1 | 1999-07-06 |
| Insulated-gate semiconductor device Grant 5,838,026 - Kitagawa , et al. November 17, 1 | 1998-11-17 |
| Thyristor Grant 5,751,022 - Yasuhara , et al. May 12, 1 | 1998-05-12 |
| Lateral IGBT Grant 5,731,603 - Nakagawa , et al. March 24, 1 | 1998-03-24 |
| Power semiconductor device having an active layer Grant 5,708,287 - Nakagawa , et al. January 13, 1 | 1998-01-13 |
| Process of making a semiconductor device using a silicon-on-insulator substrate Grant 5,688,702 - Nakagawa , et al. November 18, 1 | 1997-11-18 |
| High breakdown voltage semiconductor device Grant 5,640,040 - Nakagawa , et al. June 17, 1 | 1997-06-17 |
| Semiconductor device and method of manufacturing the same Grant 5,637,909 - Nakajima , et al. June 10, 1 | 1997-06-10 |
| Data processing apparatus including external storage previously reserved to be allocated to job groups Grant 5,606,689 - Nakagawa February 25, 1 | 1997-02-25 |
| High breakdown voltage semiconductor device Grant 5,592,014 - Funaki , et al. January 7, 1 | 1997-01-07 |
| Insulated-gate semiconductor device having high breakdown voltages Grant 5,585,651 - Kitagawa , et al. December 17, 1 | 1996-12-17 |
| Field effect transistor Grant 5,548,150 - Omura , et al. August 20, 1 | 1996-08-20 |
| Dielectrically isolated substrate and semiconductor device using the same Grant 5,512,774 - Nakagawa , et al. April 30, 1 | 1996-04-30 |
| Semiconductor device and method of manufacturing the same Grant 5,510,647 - Nakajima , et al. April 23, 1 | 1996-04-23 |
| Insulated-gate thyristor Grant 5,464,994 - Shinohe , et al. November 7, 1 | 1995-11-07 |
| Method of operating thyristor with insulated gates Grant 5,463,231 - Ogura , et al. October 31, 1 | 1995-10-31 |
| Teaching playback swing-phase-controlled above knee prosthesis Grant 5,443,524 - Sawamura , et al. August 22, 1 | 1995-08-22 |
| High breakdown voltage semiconductor device Grant 5,438,220 - Nakagawa , et al. * August 1, 1 | 1995-08-01 |
| Insulated-gate thyristor Grant 5,381,026 - Shinohe , et al. January 10, 1 | 1995-01-10 |
| High breakdown voltage semiconductor device Grant 5,378,920 - Nakagawa , et al. January 3, 1 | 1995-01-03 |
| Method for processing and displaying hidden-line graphic images Grant 5,369,734 - Suzuki , et al. November 29, 1 | 1994-11-29 |
| Teaching playback swing-phase controlled above-knee prosthesis Grant 5,344,446 - Sawamura , et al. * September 6, 1 | 1994-09-06 |
| High breakdown voltage semiconductor device Grant 5,343,067 - Nakagawa , et al. August 30, 1 | 1994-08-30 |
| Dielectrically isolated high and low voltage substrate regions Grant 5,332,920 - Nakagawa , et al. July 26, 1 | 1994-07-26 |
| High breakdown voltage semiconductor device Grant 5,294,825 - Nakagawa , et al. * March 15, 1 | 1994-03-15 |
| Silicon transistor device with silicon-germanium electron gas hetero structure channel Grant 5,272,365 - Nakagawa December 21, 1 | 1993-12-21 |
| High breakdown voltage semiconductor device Grant 5,241,210 - Nakagawa , et al. August 31, 1 | 1993-08-31 |
| Conductivity-modulation metal oxide field effect transistor with single gate structure Grant 5,237,186 - Nakagawa , et al. August 17, 1 | 1993-08-17 |
| Conductivity-modulation metal oxide semiconductor field effect transistor Grant 5,168,333 - Nakagawa , et al. December 1, 1 | 1992-12-01 |
| Semiconductor device having high breakdown voltage Grant 5,162,876 - Kitagawa , et al. November 10, 1 | 1992-11-10 |
| Turn-on/off driving technique for insulated gate thyristor Grant 5,144,401 - Ogura , et al. September 1, 1 | 1992-09-01 |
| Teaching playback swing-phase-controlled above-knee prosthesis Grant 5,133,773 - Sawamura , et al. July 28, 1 | 1992-07-28 |
| Teaching playback swing-phase-controlled above-knee prosthesis Grant 5,133,774 - Sawamura , et al. July 28, 1 | 1992-07-28 |
| Conductivity-modulation metal oxide semiconductor field effect transistor Grant 5,124,773 - Nakagawa , et al. June 23, 1 | 1992-06-23 |
| Conductivity-modulation metal oxide field effect transistor with single gate structure Grant 5,105,243 - Nakagawa , et al. April 14, 1 | 1992-04-14 |
| Computer-simulation technique for numerical analysis of semiconductor devices Grant 5,103,415 - Omura , et al. April 7, 1 | 1992-04-07 |
| Dielectrically isolated substrate with isolated high and low breakdown voltage elements Grant 5,097,314 - Nakagawa , et al. March 17, 1 | 1992-03-17 |
| Conductivity modulated MOSFET Grant 5,093,701 - Nakagawa , et al. * March 3, 1 | 1992-03-03 |
| Planar semiconductor device having high breakdown voltage Grant 5,086,332 - Nakagawa , et al. February 4, 1 | 1992-02-04 |
| Conductivity modulated MOSFET Grant 5,086,323 - Nakagawa , et al. February 4, 1 | 1992-02-04 |
| Semiconductor device and method of manufacturing the same Grant 5,072,287 - Nakagawa , et al. December 10, 1 | 1991-12-10 |
| Lateral conductivity modulated MOSFET Grant 5,068,700 - Yamaguchi , et al. November 26, 1 | 1991-11-26 |
| Teaching playback swing-phase-controlled above-knee prosthesis Grant 5,062,856 - Sawamura , et al. November 5, 1 | 1991-11-05 |
| Dielectrically isolated substrate and semiconductor device using the same Grant 5,049,968 - Nakagawa , et al. September 17, 1 | 1991-09-17 |
| MOSFET having drain voltage detection function Grant 4,994,904 - Nakagawa , et al. February 19, 1 | 1991-02-19 |
| Conductivity-modulation metal oxide semiconductor field effect transistor Grant 4,980,743 - Nakagawa , et al. December 25, 1 | 1990-12-25 |
| Gate turn-off thyristor with switching control field effect transistor Grant 4,963,972 - Shinohe , et al. October 16, 1 | 1990-10-16 |
| Turn-on/off driving technique for insulated gate thyristor Grant 4,959,703 - Ogura , et al. September 25, 1 | 1990-09-25 |
| Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating Grant 4,935,386 - Nakagawa , et al. June 19, 1 | 1990-06-19 |
| Gate turn-off thyristor with independent turn-on/off controlling transistors Grant 4,914,496 - Nakagawa , et al. * April 3, 1 | 1990-04-03 |
| Conductive modulated MOSFET Grant 4,881,120 - Nakagawa , et al. * November 14, 1 | 1989-11-14 |
| Dielectrically isolated semiconductor substrate Grant 4,878,957 - Yamaguchi , et al. November 7, 1 | 1989-11-07 |
| Conductivity modulated MOS transistor device Grant RE32,784 - Nakagawa , et al. November 15, 1 | 1988-11-15 |
| Lateral conductivity modulated MOSFET Grant 4,782,372 - Nakagawa , et al. November 1, 1 | 1988-11-01 |
| Gate turn-off thyristor with independent turn-on/off controlling transistors Grant 4,760,431 - Nakagawa , et al. July 26, 1 | 1988-07-26 |
| MIS controlled gate turn-off thyristor Grant 4,717,940 - Shinohe , et al. January 5, 1 | 1988-01-05 |
| Method of manufacturing semiconductor device wherein silicon substrates are bonded together Grant 4,700,466 - Nakagawa , et al. October 20, 1 | 1987-10-20 |
| Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations Grant 4,689,647 - Nakagawa , et al. August 25, 1 | 1987-08-25 |
| Conductivity modulated MOS transistor device Grant 4,680,604 - Nakagawa , et al. July 14, 1 | 1987-07-14 |
| Conductivity modulated MOSFET Grant 4,672,407 - Nakagawa , et al. June 9, 1 | 1987-06-09 |
| Planar type semiconductor device with a high breakdown voltage Grant 4,567,502 - Nakagawa , et al. January 28, 1 | 1986-01-28 |
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