Nagashima; Toru

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nagashima; Toru.The latest application filed is for "sensor system".

Company Profile

5.16.24

Nagashima; Toru - Shunan JP
NAGASHIMA; Toru - Shizuoka-shi Shizuoka
NAGASHIMA; Toru - Shunan-shi JP
Nagashima; Toru - Yamaguchi N/A JP
Nagashima; Toru - Ibaraki N/A JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal Grant 11,348,785 - Nagashima , et al. May 31, 2	2022-05-31
Sensor System App 20210341622 - NAGASHIMA; Toru ; et al.	2021-11-04
Distance Measurement Sensor And Distance Measurement Method App 20210311191 - NAGASHIMA; Toru	2021-10-07
Object Identification System App 20210295065 - ARAI; Kensuke ; et al.	2021-09-23
Object Identification System App 20200410262 - NAGASHIMA; Toru	2020-12-31
Method for producing aluminum nitride single crystal substrate Grant 10,822,718 - Nagashima , et al. November 3, 2	2020-11-03
Group Iii Nitride Single Crystal Substrate App 20200299862 - FUKUDA; Masayuki ; et al.	2020-09-24
Sensing System And Vehicle App 20200255030 - Kind Code	2020-08-13
Recognition Sensor And Control Method Thereof, Automobile, Automotive Lamp, Object Recognition System, And Object Recognition Me App 20200183007 - NAGASHIMA; Toru	2020-06-11
Apparatus For Manufacturing Group Iii Nitride Single Crystal, Method For Manufacturing Group Iii Nitride Single Crystal Using Th App 20190287799 - NAGASHIMA; Toru ; et al.	2019-09-19
Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal Grant 10,354,862 - Nagashima , et al. July 16, 2	2019-07-16
Method For Producing Aluminum Nitride Single Crystal Substrate App 20190093255 - NAGASHIMA; Toru ; et al.	2019-03-28
Highly transparent aluminum nitride single crystalline layers and devices made therefrom Grant 9,840,790 - Koukitu , et al. December 12, 2	2017-12-12
Apparatus For Manufacturing Group Iii Nitride Single Crystal, Method For Manufacturing Group Iii Nitride Single Crystal Using The Apparatus, And Aluminum Nitride Single Crystal App 20170330745 - NAGASHIMA; Toru ; et al.	2017-11-16
N-type aluminum nitride monocrystalline substrate Grant 9,806,205 - Kinoshita , et al. October 31, 2	2017-10-31
N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device Grant 9,748,410 - Kinoshita , et al. August 29, 2	2017-08-29
N-Type Aluminum Nitride Monocrystalline Substrate App 20170222064 - Kinoshita; Toru ; et al.	2017-08-03
Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy Grant 9,708,733 - Koukitsu , et al. July 18, 2	2017-07-18
Single-cystalline aluminum nitride substrate and a manufacturing method thereof Grant 9,691,942 - Koukitu , et al. June 27, 2	2017-06-27
N-type Aluminum Nitride Single-crystal Substrate And Vertical Nitride Semiconductor Device App 20160254391 - Kinoshita; Toru ; et al.	2016-09-01
Method For Manufacturing Aluminum-based Group Iii Nitride Single Crystal App 20160108554 - KOUKITSU; Akinori ; et al.	2016-04-21
Production method of an aluminum based group III nitride single crystal Grant 9,145,621 - Nagashima , et al. September 29, 2	2015-09-29
Highly Transparent Aluminum Nitride Single Crystalline Layers And Devices Made Therefrom App 20150247260 - Koukitu; Akinori ; et al.	2015-09-03
Method of producing a group III nitride crystal Grant 8,926,752 - Koukitu , et al. January 6, 2	2015-01-06
Single-Crystalline Aluminum Nitride Substrate and a Manufacturing Method Thereof App 20140346638 - Koukitu; Akinori ; et al.	2014-11-27
Production Method of an Aluminum Based Group III Nitride Single Crystal App 20130319320 - Nagashima; Toru ; et al.	2013-12-05
n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof Grant 8,129,208 - Koukitu , et al. March 6, 2	2012-03-06
Method and apparatus for producing group III nitride Grant 7,947,577 - Nagashima , et al. May 24, 2	2011-05-24
Laminated Body And The Method For Production Thereof App 20110094438 - Koukitu; Akinori ; et al.	2011-04-28
METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE App 20110018104 - Nagashima; Toru ; et al.	2011-01-27
N-type Conductive Aluminum Nitride Semiconductor Crystal And Manufacturing Method Thereof App 20100320462 - Koukitu; Akinori ; et al.	2010-12-23
Method Of Producing A Group Iii Nitride Crystal App 20100093124 - Koukitu; Akinori ; et al.	2010-04-15
Method And Apparatus For Producing Group Iii Nitride App 20100029065 - Nagashima; Toru ; et al.	2010-02-04

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