loadpatents
name:-0.014814138412476
name:-0.015529870986938
name:-0.0018429756164551
Nagahama; Taro Patent Filings

Nagahama; Taro

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nagahama; Taro.The latest application filed is for "magnetoresistive element and magnetic memory".

Company Profile
0.13.10
  • Nagahama; Taro - Tsukuba JP
  • NAGAHAMA; Taro - Tsukuba-Shi JP
  • Nagahama; Taro - Ibaraki JP
  • Nagahama; Taro - Okazaki JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Magnetoresistive element and magnetic memory
Grant 9,219,227 - Daibou , et al. December 22, 2
2015-12-22
Magnetoresistive element and magnetic memory
Grant 9,087,980 - Daibou , et al. July 21, 2
2015-07-21
Magnetoresistive Element And Magnetic Memory
App 20150076635 - DAIBOU; Tadaomi ;   et al.
2015-03-19
Magnetoresistive Element And Magnetic Memory
App 20140159177 - DAIBOU; Tadaomi ;   et al.
2014-06-12
Magnetoresistive element and magnetic memory
Grant 8,705,269 - Nagase , et al. April 22, 2
2014-04-22
Magnetoresistive element and magnetic memory
Grant 8,680,632 - Daibou , et al. March 25, 2
2014-03-25
Magnetoresistive Effect Element, Magnetic Memory, And Method Of Manufacturing Magentoresistive Effect Element
App 20130288397 - Kitagawa; Eiji ;   et al.
2013-10-31
Magnetoresistive effect element, magnetic memory
Grant 8,502,331 - Kitagawa , et al. August 6, 2
2013-08-06
Magnetoresistive Element And Magnetic Memory
App 20120241881 - DAIBOU; Tadaomi ;   et al.
2012-09-27
Magnetoresistive element and magnetic memory
Grant 8,208,292 - Kai , et al. June 26, 2
2012-06-26
Magnetoresistive Element And Magnetic Memory
App 20120099369 - KAI; Tadashi ;   et al.
2012-04-26
Magnetoresistive Element And Magnetic Memory
App 20120069640 - Nagase; Toshihiko ;   et al.
2012-03-22
Magnetoresistive Effect Element, Magnetic Memory, And Method Of Manufacturing Magnetoresistive Effect Element
App 20120068285 - KITAGAWA; Eiji ;   et al.
2012-03-22
Magnetoresistive element and magnetic memory
Grant 8,107,281 - Kai , et al. January 31, 2
2012-01-31
Magnetoresistive Element And Magnetic Memory
App 20110073970 - Kai; Tadashi ;   et al.
2011-03-31
Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)
Grant 7,514,160 - Nagahama , et al. April 7, 2
2009-04-07
Tunnel Magnetoresistance Element
App 20070128470 - Nagahama; Taro ;   et al.
2007-06-07
Tunnel magnetoresistance element
Grant 7,220,498 - Nagahama , et al. May 22, 2
2007-05-22
Tunnel magnetoresistive element
App 20040144995 - Nagahama, Taro ;   et al.
2004-07-29
Sander
Grant D431,437 - Niwa , et al. October 3, 2
2000-10-03

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