Naczas; Sebastian

Patent Applications and Registrations

Patent applications and USPTO patent grants for Naczas; Sebastian.The latest application filed is for "fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air".

Company Profile

10.16.14

Naczas; Sebastian - Albany NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap Grant 10,950,492 - Cheng , et al. March 16, 2	2021-03-16
Co-fabrication of magnetic device structures with electrical interconnects having reduced resistance through increased conductor grain size Grant 10,811,599 - Clevenger , et al. October 20, 2	2020-10-20
Co-fabrication of magnetic device structures with electrical interconnects having reduced resistance through increased conductor grain size Grant 10,756,260 - Clevenger , et al. A	2020-08-25
Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap Grant 10,559,491 - Cheng , et al. Feb	2020-02-11
Fabrication Of Vertical Transport Fin Field Effect Transistors With A Self-aligned Separator And An Isolation Region With An Air App 20190311942 - Cheng; Kangguo ; et al.	2019-10-10
Co-fabrication Of Magnetic Device Structures With Electrical Interconnects Having Reduced Resistance Through Increased Conductor App 20190280196 - Clevenger; Lawrence A. ; et al.	2019-09-12
Co-fabrication Of Magnetic Device Structures With Electrical Interconnects Having Reduced Resistance Through Increased Conductor App 20190273204 - Clevenger; Lawrence A. ; et al.	2019-09-05
Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap Grant 10,381,262 - Cheng , et al. A	2019-08-13
Co-fabrication of magnetic device structures with electrical interconnects having reduced resistance through increased conductor grain size Grant 10,361,364 - Clevenger , et al.	2019-07-23
Forming sacrificial endpoint layer for deep STI recess Grant 10,312,132 - Cheng , et al.	2019-06-04
Co-fabrication Of Magnetic Device Structures With Electrical Interconnects Having Reduced Resistance Through Increased Conductor Grain Size App 20180366640 - Clevenger; Lawrence A. ; et al.	2018-12-20
Fabrication Of Vertical Transport Fin Field Effect Transistors With A Self-aligned Separator And An Isolation Region With An Air Gap App 20180308742 - Cheng; Kangguo ; et al.	2018-10-25
Fabrication Of Vertical Transport Fin Field Effect Transistors With A Self-aligned Separator And An Isolation Region With An Air Gap App 20180308743 - Cheng; Kangguo ; et al.	2018-10-25
Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap Grant 10,056,289 - Cheng , et al. August 21, 2	2018-08-21
Forming Sacrificial Endpoint Layer For Deep Sti Recess App 20180211866 - Cheng; Kangguo ; et al.	2018-07-26
Embedded carbon-doped germanium as stressor for germanium nFET devices Grant 9,768,262 - Dittmar , et al. September 19, 2	2017-09-19
EMBEDDED CARBON-DOPED GERMANIUM AS STRESSOR FOR GERMANIUM nFET DEVICES App 20160343807 - Dittmar; Jeffrey L. ; et al.	2016-11-24
Embedded carbon-doped germanium as stressor for germanium nFET devices Grant 9,419,138 - Dittmar , et al. August 16, 2	2016-08-16
Locally raised epitaxy for improved contact by local silicon capping during trench silicide processings Grant 9,305,883 - Naczas , et al. April 5, 2	2016-04-05
EMBEDDED CARBON-DOPED GERMANIUM AS STRESSOR FOR GERMANIUM nFET DEVICES App 20160093735 - Dittmar; Jeffrey L. ; et al.	2016-03-31
Fabrication of surface textures by ion implantation for antireflection of silicon crystals Grant 9,231,061 - Huang , et al. January 5, 2	2016-01-05
Locally Raised Epitaxy For Improved Contact By Local Silicon Capping During Trench Silicide Processings App 20150179576 - Naczas; Sebastian ; et al.	2015-06-25
Locally raised epitaxy for improved contact by local silicon capping during trench silicide processings Grant 8,999,779 - Naczas , et al. April 7, 2	2015-04-07
Locally Raised Epitaxy For Improved Contact By Local Silicon Capping During Trench Silicide Processings App 20150069531 - Naczas; Sebastian ; et al.	2015-03-12
FinFET devices containing merged epitaxial Fin-containing contact regions Grant 8,900,934 - Adam , et al. December 2, 2	2014-12-02
FinFET devices containing merged epitaxial Fin-containing contact regions Grant 8,896,063 - Adam , et al. November 25, 2	2014-11-25
Finfet Devices Containing Merged Epitaxial Fin-containing Contact Regions App 20140312419 - Adam; Thomas N. ; et al.	2014-10-23
Finfet Devices Containing Merged Epitaxial Fin-containing Contact Regions App 20140312420 - Adam; Thomas N. ; et al.	2014-10-23
Fabrication Of Surface Textures By Ion Implantation For Antireflection Of Silicon Crystals App 20120097209 - HUANG; Mengbing ; et al.	2012-04-26

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.