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name:-0.033222198486328
name:-0.027428150177002
name:-0.030112981796265
Na; Myung-Hee Patent Filings

Na; Myung-Hee

Patent Applications and Registrations

Patent applications and USPTO patent grants for Na; Myung-Hee.The latest application filed is for "channel orientation of cmos gate-all-around field-effect transistor devices for enhanced carrier mobility".

Company Profile
17.26.23
  • Na; Myung-Hee - Lagrangeville NY
  • Na; Myung-Hee - Essex Junction VT
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Structure and method to form bi-layer composite phase-change-memory cell
Grant 10,937,961 - Ok , et al. March 2, 2
2021-03-02
Channel orientation of CMOS gate-all-around field-effect transistor devices for enhanced carrier mobility
Grant 10,892,331 - Yamashita , et al. January 12, 2
2021-01-12
Channel Orientation Of Cmos Gate-all-around Field-effect Transistor Devices For Enhanced Carrier Mobility
App 20200388681 - Yamashita; Tenko ;   et al.
2020-12-10
Structure and method to form phase change memory cell with self- align top electrode contact
Grant 10,833,267 - Ok , et al. November 10, 2
2020-11-10
Self-aligned high density and size adjustable phase change memory
Grant 10,803,933 - Ok , et al. October 13, 2
2020-10-13
Reliable gate contacts over active areas
Grant 10,693,005 - Alptekin , et al.
2020-06-23
Structure And Method To Form Bi-layer Composite Phase-change-memory Cell
App 20200144501 - Ok; Injo ;   et al.
2020-05-07
Structure and Method to Form Phase Change Memory Cell with Self-Align Top Electrode Contact
App 20200136043 - OK; Injo ;   et al.
2020-04-30
4T static random access memory bitcell retention
Grant 10,614,877 - Chu , et al.
2020-04-07
Contact-first Field-effect Transistors
App 20200066871 - Hook; Terence P. ;   et al.
2020-02-27
Self-Aligned High Density and Size Adjustable Phase Change Memory
App 20200066337 - OK; Injo ;   et al.
2020-02-27
Standard cell architecture with at least one gate contact over an active area
Grant 10,424,574 - Chu , et al. Sept
2019-09-24
Standard cell architecture with at least one gate contact over an active area
Grant 10,424,576 - Chu , et al. Sept
2019-09-24
Reliable Gate Contacts Over Active Areas
App 20190259869 - Alptekin; Emre ;   et al.
2019-08-22
Metal fill optimization for self-aligned double patterning
Grant 10,381,338 - Chu , et al. A
2019-08-13
Reliable gate contacts over active areas
Grant 10,381,480 - Alptekin , et al. A
2019-08-13
Ultra dense and stable 4T SRAM cell design having NFETs and PFETs
Grant 10,381,068 - Na , et al. A
2019-08-13
Ultra Dense and Stable 4T SRAM Cell Design Having Nfets And Pfets
App 20190189195 - Na; Myung-Hee ;   et al.
2019-06-20
Reliable Gate Contacts Over Active Areas
App 20190097016 - Alptekin; Emre ;   et al.
2019-03-28
Standard Cell Architecture With At Least One Gate Contact Over An Active Area
App 20180211948 - Chu; Albert M. ;   et al.
2018-07-26
Standard Cell Architecture With At Least One Gate Contact Over An Active Area
App 20180211947 - Chu; Albert M. ;   et al.
2018-07-26
Metal Fill Optimization For Self-aligned Double Patterning
App 20180082854 - Chu; Albert M. ;   et al.
2018-03-22
Metal fill optimization for self-aligned double patterning
Grant 9,735,029 - Chu , et al. August 15, 2
2017-08-15
Contact-first Field-effect Transistors
App 20160372600 - Hook; Terence B. ;   et al.
2016-12-22
Field effect transistor having delay element with back gate
Grant 9,520,391 - Anderson , et al. December 13, 2
2016-12-13
FinFET formation with late fin reveal
Grant 9,171,935 - Kim , et al. October 27, 2
2015-10-27
FinFET FORMATION WITH LATE FIN REVEAL
App 20150255569 - Kim; Seong-Dong ;   et al.
2015-09-10
Silicon-germanium fins and silicon fins on a bulk substrate
Grant 9,029,913 - Utomo , et al. May 12, 2
2015-05-12
Strained finFET with an electrically isolated channel
Grant 8,928,086 - Utomo , et al. January 6, 2
2015-01-06
Strained Finfet With An Electrically Isolated Channel
App 20140377924 - Utomo; Henry K. ;   et al.
2014-12-25
Silicon-germanium Fins And Silicon Fins On A Bulk Substrate
App 20140252413 - Utomo; Henry K. ;   et al.
2014-09-11
Strained Finfet With An Electrically Isolated Channel
App 20140191297 - Utomo; Henry K. ;   et al.
2014-07-10
Determining current of a first FET of body connected FETs
Grant 8,648,647 - Na , et al. February 11, 2
2014-02-11
Semiconductor Device Including Body Connected Fets
App 20130278281 - Na; Myung-Hee ;   et al.
2013-10-24
Semiconductor device including body connected FETs
Grant 8,542,058 - Na , et al. September 24, 2
2013-09-24
Method of providing threshold voltage adjustment through gate dielectric stack modification
Grant 8,354,309 - Greene , et al. January 15, 2
2013-01-15
Semiconductor Device Including Body Connected Fets
App 20120169415 - Na; Myung-Hee ;   et al.
2012-07-05
Threshold Voltage Adjustment Through Gate Dielectric Stack Modification
App 20120108017 - Greene; Brian J. ;   et al.
2012-05-03
Threshold voltage adjustment through gate dielectric stack modification
Grant 8,106,455 - Greene , et al. January 31, 2
2012-01-31
Efficient methodology for the accurate generation of customized compact model parameters from electrical test data
Grant 8,032,349 - Loo , et al. October 4, 2
2011-10-04
Threshold Voltage Adjustment Through Gate Dielectric Stack Modification
App 20100276753 - Greene; Brian J. ;   et al.
2010-11-04
Rotated field effect transistors and method of manufacture
Grant 7,795,098 - Anderson , et al. September 14, 2
2010-09-14
Efficient Methodology For The Accurate Generation Of Customized Compact Model Parameters From Electrical Test Data
App 20080183442 - Loo; Sim Y. ;   et al.
2008-07-31
Rotated field effect transistors and method of manufacture
Grant 7,335,563 - Anderson , et al. February 26, 2
2008-02-26
Rotated Field Effect Transistors And Method Of Manufacture
App 20070105326 - Anderson; Brent A. ;   et al.
2007-05-10
Body-Contacted Silicon on Insulation (SOI) field effect transistors
App 20070048925 - McStay; Kevin ;   et al.
2007-03-01
Method and structures for measuring gate tunneling leakage parameters of field effect transistors
Grant 7,011,980 - Na , et al. March 14, 2
2006-03-14

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