Mutti; Paolo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Mutti; Paolo.The latest application filed is for "single crystal silicon having improved gate oxide integrity".

Company Profile

0.10.16

Mutti; Paolo - Milan IT
Mutti; Paolo - Merano IT
Mutti, Paolo - Milano IT

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Single Crystal Silicon Having Improved Gate Oxide Integrity App 20090022930 - Falster; Robert J. ; et al.	2009-01-22
Process for forming low defect density, ideal oxygen precipitating silicon Grant 7,442,253 - Falster , et al. October 28, 2	2008-10-28
Process for preparing single crystal silicon having improved gate oxide integrity Grant 7,431,765 - Falster , et al. October 7, 2	2008-10-07
Process For Forming Low Defect Density, Ideal Oxygen Precipitating Silicon App 20070224783 - Falster; Robert J. ; et al.	2007-09-27
Low defect density, ideal oxygen precipitating silicon Grant 7,229,693 - Falster , et al. June 12, 2	2007-06-12
Single crystal silicon having improved gate oxide integrity Grant 6,986,925 - Falster , et al. January 17, 2	2006-01-17
Vacancy-dominated, defect-free silicon App 20050238905 - Falster, Robert J. ; et al.	2005-10-27
Low defect density, ideal oxygen precipitating silicon App 20050170610 - Falster, Robert J. ; et al.	2005-08-04
Process for preparing single crystal silicon having improved gate oxide integrity App 20050160967 - Falster, Robert J. ; et al.	2005-07-28
Process for producing low defect density, ideal oxygen precipitating silicon Grant 6,896,728 - Falster , et al. May 24, 2	2005-05-24
Vacancy, dominsated, defect-free silicon Grant 6,840,997 - Falster , et al. January 11, 2	2005-01-11
Process for producing low defect density silicon App 20040089224 - Falster, Robert J. ; et al.	2004-05-13
Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations Grant 6,726,764 - Mutti , et al. April 27, 2	2004-04-27
Process for producing low defect density, ideal oxygen precipitating silicon App 20040025782 - Falster, Robert J. ; et al.	2004-02-12
Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions Grant 6,652,646 - Falster , et al. November 25, 2	2003-11-25
Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation App 20030196587 - McCallum, Kirk D. ; et al.	2003-10-23
Low defect density epitaxial wafer and a process for the preparation thereof Grant 6,632,278 - Falster , et al. October 14, 2	2003-10-14
Process for preparing defect free silicon crystals which allows for variability in process conditions App 20030116081 - Falster, Robert J. ; et al.	2003-06-26
Vacancy, dominated, defect-free silicon App 20030051657 - Falster, Robert J. ; et al.	2003-03-20
Low Defect Density Epitaxial Wafer And A Process For The Preparation Thereof App 20020170485 - Falster, Robert J. ; et al.	2002-11-21
Process for preparing single crystal silicon having improved gate oxide integrity App 20020121238 - Falster, Robert J. ; et al.	2002-09-05
Vacancy, dominsated, defect-free silicon App 20020078880 - Falster, Robert J. ; et al.	2002-06-27
Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations App 20020043206 - Mutti, Paolo ; et al.	2002-04-18
Process for preparing defect free silicon crystals which allows for variability in process conditions App 20010027743 - Falster, Robert J. ; et al.	2001-10-11
Low defect density, self-interstitial dominated silicon App 20010025597 - Falster, Robert J. ; et al.	2001-10-04
Low defect density, ideal oxygen precipitating silicon Grant 6,190,631 - Falster , et al. February 20, 2	2001-02-20

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