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Patent applications and USPTO patent grants for Mutou; Akiyoshi.The latest application filed is for "semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof".
Patent | Date |
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Method of manufacturing a semiconductor device with a silicon-germanium gate electrode Grant 7,172,934 - Mutou February 6, 2 | 2007-02-06 |
Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof App 20060138518 - Mutou; Akiyoshi ;   et al. | 2006-06-29 |
Method of manufacturing a semiconductor device with a silicon-germanium gate electrode App 20060131559 - Mutou; Akiyoshi | 2006-06-22 |
Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof App 20050045938 - Mutou, Akiyoshi ;   et al. | 2005-03-03 |
Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof App 20040238895 - Mutou, Akiyoshi | 2004-12-02 |
Semiconductor device with NMOS including Si:C channel region and/or PMOS including SiGe channel region Grant 6,774,409 - Baba , et al. August 10, 2 | 2004-08-10 |
Semiconductor device App 20020125502 - Baba, Tomoya ;   et al. | 2002-09-12 |
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