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Patent applications and USPTO patent grants for Murto; Robert W..The latest application filed is for "dual work function gate electrodes obtained through local thickness-limited silicidation".
Patent | Date |
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Method for manufacturing dual work function gate electrodes through local thickness-limited silicidation Grant 7,338,865 - Murto , et al. March 4, 2 | 2008-03-04 |
Dual work function gate electrodes obtained through local thickness-limited silicidation App 20060019437 - Murto; Robert W. ;   et al. | 2006-01-26 |
Ion implant source with multiple indirectly-heated electron sources Grant 6,356,026 - Murto March 12, 2 | 2002-03-12 |
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