| Patent | Date |
|---|
Germanium-rich nanowire transistor with relaxed buffer layer
Grant 11,450,739 - Glass , et al. September 20, 2 | 2022-09-20 |
Integrated circuit structures having germanium-based channels
Grant 11,437,472 - Chouksey , et al. September 6, 2 | 2022-09-06 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures
Grant 11,411,110 - Jackson , et al. August 9, 2 | 2022-08-09 |
Methods Of Forming Dislocation Enhanced Strain In Nmos And Pmos Structures
App 20220238714 - Jackson; Michael ; et al. | 2022-07-28 |
Top Gate Recessed Channel Cmos Thin Film Transistor In The Back End Of Line And Methods Of Fabrication
App 20220223519 - Dewey; Gilbert ; et al. | 2022-07-14 |
Source or drain structures with contact etch stop layer
Grant 11,374,100 - Bomberger , et al. June 28, 2 | 2022-06-28 |
Source & Drain Dopant Diffusion Barriers For N-type Germanium Transistors
App 20220199402 - Ganguly; Koustav ; et al. | 2022-06-23 |
Self-aligned Interconnect Structures And Methods Of Fabrication
App 20220199468 - Jun; Kimin ; et al. | 2022-06-23 |
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication
Grant 11,328,988 - Dewey , et al. May 10, 2 | 2022-05-10 |
Source-channel Junction For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20220140076 - HUANG; Cheng-Ying ; et al. | 2022-05-05 |
Three-dimensional Integrated Circuits (3dics) Including Bottom Gate Mos Transistors With Monocrystalline Channel Material
App 20220093586 - Huang; Cheng-Ying ; et al. | 2022-03-24 |
Transistor structure with indium phosphide channel
Grant 11,276,694 - Rachmady , et al. March 15, 2 | 2022-03-15 |
Device, method and system for promoting channel stress in a NMOS transistor
Grant 11,264,501 - Mehandru , et al. March 1, 2 | 2022-03-01 |
Methods Of Forming Dislocation Enhanced Strain In Nmos And Pmos Structures
App 20220059699 - Jackson; Michael ; et al. | 2022-02-24 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
Grant 11,257,904 - Huang , et al. February 22, 2 | 2022-02-22 |
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material
Grant 11,244,943 - Huang , et al. February 8, 2 | 2022-02-08 |
Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material
Grant 11,164,785 - Agrawal , et al. November 2, 2 | 2021-11-02 |
Methods of forming dislocation enhanced strain in NMOS structures
Grant 11,107,920 - Jackson , et al. August 31, 2 | 2021-08-31 |
Top Gate Recessed Channel Cmos Thin Film Transistor In The Back End Of Line And Methods Of Fabrication
App 20210202378 - Dewey; Gilbert ; et al. | 2021-07-01 |
Three-dimensional Integrated Circuits (3dics) Including Bottom Gate Mos Transistors With Monocrystalline Channel Material
App 20210202476 - Huang; Cheng-Ying ; et al. | 2021-07-01 |
Three-dimensional Integrated Circuits (3dics) Including Upper-level Transistors With Epitaxial Source & Drain Material
App 20210202319 - Agrawal; Ashish ; et al. | 2021-07-01 |
Methods of forming doped source/drain contacts and structures formed thereby
Grant 11,004,978 - Glass , et al. May 11, 2 | 2021-05-11 |
Thin Film Transistor Structures With Regrown Source & Drain
App 20210036023 - Agrawal; Ashish ; et al. | 2021-02-04 |
Gate-all-around Integrated Circuit Structures Having Nanowires With Tight Vertical Spacing
App 20200357930 - GLASS; Glenn ; et al. | 2020-11-12 |
Silicide Structure Of An Integrated Transistor Device And Method Of Providing Same
App 20200343343 - Acton; Orb ; et al. | 2020-10-29 |
Source Or Drain Structures With Phosphorous And Arsenic Co-dopants
App 20200312958 - MURTHY; Anand ; et al. | 2020-10-01 |
Source Or Drain Structures With Vertical Trenches
App 20200312842 - KEECH; Ryan ; et al. | 2020-10-01 |
Source Or Drain Structures With Low Resistivity
App 20200312959 - BOMBERGER; Cory ; et al. | 2020-10-01 |
Gate-all-around Integrated Circuit Structures Having Embedded Gesnb Source Or Drain Structures
App 20200312960 - BOMBERGER; Cory ; et al. | 2020-10-01 |
Source Or Drain Structures For Germanium N-channel Devices
App 20200313001 - KEECH; Ryan ; et al. | 2020-10-01 |
Gate-all-around Integrated Circuit Structures Having Germanium Nanowire Channel Structures
App 20200312981 - BOMBERGER; Cory ; et al. | 2020-10-01 |
Gate-all-around Integrated Circuit Structures Having Source Or Drain Structures With Epitaxial Nubs
App 20200303502 - BOMBERGER; Cory ; et al. | 2020-09-24 |
Device, Method And System For Promoting Channel Stress In A Nmos Transistor
App 20200227558 - Mehandru; Rishabh ; et al. | 2020-07-16 |
Integrated Circuit Structures With Source Or Drain Dopant Diffusion Blocking Layers
App 20200219975 - BOMBERGER; Cory ; et al. | 2020-07-09 |
High Breakdown Voltage Structure For High Performance Gan-based Hemt And Mos Devices To Enable Gan C-mos
App 20200211842 - GLASS; Glenn ; et al. | 2020-07-02 |
High Conductivity Source And Drain Structure For Hemt Devices
App 20200194551 - GLASS; Glenn ; et al. | 2020-06-18 |
Gan Based Hemt Device Relaxed Buffer Structure On Silicon
App 20200194577 - GLASS; Glenn ; et al. | 2020-06-18 |
Methods Of Forming Doped Source/drain Contacts And Structures Formed Thereby
App 20200176601 - Glass; Glenn ; et al. | 2020-06-04 |
Methods of forming self aligned spacers for nanowire device structures
Grant 10,672,868 - Jambunathan , et al. | 2020-06-02 |
Systems, methods and devices for isolation for subfin leakage
Grant 10,644,112 - Chu-Kung , et al. | 2020-05-05 |
Arsenic-doped Epitaxial Source/drain Regions For Nmos
App 20200105754 - Murthy; Anand ; et al. | 2020-04-02 |
Gate-all-around Integrated Circuit Structures Having Underlying Dopant-diffusion Blocking Layers
App 20200105872 - GLASS; Glenn ; et al. | 2020-04-02 |
Gate-all-around Integrated Circuit Structures Having Vertically Discrete Source Or Drain Structures
App 20200105871 - GLASS; Glenn ; et al. | 2020-04-02 |
Transistor Structure With Indium Phosphide Channel
App 20200098757 - Rachmady; Willy ; et al. | 2020-03-26 |
Germanium-rich Nanowire Transistor With Relaxed Buffer Layer
App 20200091287 - Glass; Glenn ; et al. | 2020-03-19 |
Methods of forming doped source/drain contacts and structures formed thereby
Grant 10,573,750 - Glass , et al. Feb | 2020-02-25 |
Channel Layer Formation For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20200006576 - MA; Sean ; et al. | 2020-01-02 |
Channel Layer For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20200006523 - METZ; Matthew ; et al. | 2020-01-02 |
Source-channel Junction For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20200006480 - HUANG; Cheng-Ying ; et al. | 2020-01-02 |
Channel Structures With Sub-fin Dopant Diffusion Blocking Layers
App 20200006332 - BOMBERGER; Cory ; et al. | 2020-01-02 |
Channel Layer Formation For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20200006069 - DEWEY; Gilbert ; et al. | 2020-01-02 |
Integrated Circuit Structures Having Germanium-based Channels
App 20200006492 - CHOUKSEY; Siddharth ; et al. | 2020-01-02 |
Source Or Drain Structures With Relatively High Germanium Content
App 20200006491 - BOMBERGER; Cory ; et al. | 2020-01-02 |
Source Or Drain Structures With Contact Etch Stop Layer
App 20200006504 - BOMBERGER; Cory ; et al. | 2020-01-02 |
Methods Of Forming Dislocation Enhanced Strain In Nmos Structures
App 20190334034 - JACKSON; Michael ; et al. | 2019-10-31 |
Methods of forming dislocation enhanced strain in NMOS structures
Grant 10,396,201 - Jackson , et al. A | 2019-08-27 |
Systems, Methods And Devices For Isolation For Subfin Leakage
App 20190189749 - Chu-Kung; Benjamin ; et al. | 2019-06-20 |
Methods Of Forming Self Aligned Spacers For Nanowire Device Structures
App 20180358436 - Jambunathan; Karthik ; et al. | 2018-12-13 |
Methods Of Forming Doped Source/drain Contacts And Structures Formed Thereby
App 20180261696 - Glass; Glenn ; et al. | 2018-09-13 |
Method for improving transistor performance through reducing the salicide interface resistance
Grant 9,876,113 - Murthy , et al. January 23, 2 | 2018-01-23 |
Semiconductor transistor having a stressed channel
Grant 9,735,270 - Murthy , et al. August 15, 2 | 2017-08-15 |
Method for improving transistor performance through reducing the salicide interface resistance
Grant 9,680,016 - Murthy , et al. June 13, 2 | 2017-06-13 |
Enhanced dislocation stress transistor
Grant 9,660,078 - Weber , et al. May 23, 2 | 2017-05-23 |
Nanowire transistor with underlayer etch stops
Grant 9,614,060 - Kim , et al. April 4, 2 | 2017-04-04 |
Surface Encapsulation For Wafer Bonding
App 20170062569 - JUN; Kimin ; et al. | 2017-03-02 |
Method For Improving Transistor Performance Through Reducing The Salicide Interface Resistance
App 20160336447 - MURTHY; Anand ; et al. | 2016-11-17 |
Method For Improving Transistor Performance Through Reducing The Salicide Interface Resistance
App 20160336446 - Murthy; Anand ; et al. | 2016-11-17 |
Semiconductor transistor having a stressed channel
Grant 9,490,364 - Murthy , et al. November 8, 2 | 2016-11-08 |
Nanowire Transistor With Underlayer Etch Stops
App 20160284821 - Kim; Seiyon ; et al. | 2016-09-29 |
Method for improving transistor performance through reducing the salicide interface resistance
Grant 9,437,710 - Murthy , et al. September 6, 2 | 2016-09-06 |
Methods Of Forming Dislocation Enhanced Strain In Nmos Structures
App 20160204256 - Jackson; Michael ; et al. | 2016-07-14 |
Nanowire transistor with underlayer etch stops
Grant 9,385,221 - Kim , et al. July 5, 2 | 2016-07-05 |
Semiconductor Transistor Having A Stressed Channel
App 20160133747 - MURTHY; ANAND ; et al. | 2016-05-12 |
Enhanced Dislocation Stress Transistor
App 20160079423 - Weber; Cory E. ; et al. | 2016-03-17 |
Enhanced dislocation stress transistor
Grant 9,231,076 - Weber , et al. January 5, 2 | 2016-01-05 |
Method for improving transistor performance through reducing the salicide interface resistance
Grant 9,202,889 - Murthy , et al. December 1, 2 | 2015-12-01 |
Nanowire Transistor With Underlayer Etch Stops
App 20150221744 - Kim; Seiyon ; et al. | 2015-08-06 |
Enhanced dislocation stress transistor
Grant 9,076,814 - Weber , et al. July 7, 2 | 2015-07-07 |
Nanowire transistor with underlayer etch stops
Grant 9,064,944 - Kim , et al. June 23, 2 | 2015-06-23 |
Enhanced Dislocation Stress Transistor
App 20150155384 - Weber; Cory E. ; et al. | 2015-06-04 |
Method For Improving Transistor Performance Through Reducing The Salicide Interface Resistance
App 20150108546 - MURTHY; Anand ; et al. | 2015-04-23 |
Enhanced Dislocation Stress Transistor
App 20140284626 - Weber; Cory ; et al. | 2014-09-25 |
Nanowire Transistor With Underlayer Etch Stops
App 20140264280 - Kim; Seiyon ; et al. | 2014-09-18 |
Enhanced dislocation stress transistor
Grant 8,779,477 - Weber , et al. July 15, 2 | 2014-07-15 |
Strained transistor integration for CMOS
Grant 8,748,869 - Boyanov , et al. June 10, 2 | 2014-06-10 |
Method For Improving Transistor Performance Through Reducing The Salicide Interface Resistance
App 20130302961 - Murthy; Anand ; et al. | 2013-11-14 |
Method for improving transistor performance through reducing the salicide interface resistance
Grant 8,482,043 - Murthy , et al. July 9, 2 | 2013-07-09 |
Strained Transistor Integration For Cmos
App 20130153965 - Boyanov; Boyan ; et al. | 2013-06-20 |
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
Grant 8,426,858 - Hattendorf , et al. April 23, 2 | 2013-04-23 |
Strained transistor integration for CMOS
Grant 8,373,154 - Boyanov , et al. February 12, 2 | 2013-02-12 |
Transistor gate electrode having conductor material layer
Grant 8,237,234 - Murthy , et al. August 7, 2 | 2012-08-07 |
Multi-component strain-inducing semiconductor regions
Grant 8,154,087 - Cook, Jr. , et al. April 10, 2 | 2012-04-10 |
Methods Of Forming Low Interface Resistance Contacts And Structures Formed Thereby
App 20120068180 - Mehandru; Rishabh ; et al. | 2012-03-22 |
Graded High Germanium Compound Films For Strained Semiconductor Devices
App 20120032265 - Simonelli; Danielle ; et al. | 2012-02-09 |
Multi-component Strain-inducing Semiconductor Regions
App 20110215375 - Cook, JR.; Ted E. ; et al. | 2011-09-08 |
Transistor Gate Electrode Having Conductor Material Layer
App 20110186912 - Murthy; Anand ; et al. | 2011-08-04 |
Transistor gate electrode having conductor material layer
Grant 7,968,957 - Murthy , et al. June 28, 2 | 2011-06-28 |
Multi-component strain-inducing semiconductor regions
Grant 7,943,469 - Cook, Jr. , et al. May 17, 2 | 2011-05-17 |
Method for improving transistor performance through reducing the salicide interface resistance
App 20110101418 - Murthy; Anand ; et al. | 2011-05-05 |
Strained Nmos Transistor Featuring Deep Carbon Doped Regions And Raised Donor Doped Source And Drain
App 20110068403 - Hattendorf; Michael L. ; et al. | 2011-03-24 |
Graded high germanium compound films for strained semiconductor devices
Grant 7,902,009 - Simonelli , et al. March 8, 2 | 2011-03-08 |
Transistor Gate Electrode Having Conductor Material Layer
App 20110018031 - Murthy; Anand ; et al. | 2011-01-27 |
Transistor gate electrode having conductor material layer
Grant 7,871,916 - Murthy , et al. January 18, 2 | 2011-01-18 |
Method for improving transistor performance through reducing the salicide interface resistance
App 20110006344 - Murthy; Anand ; et al. | 2011-01-13 |
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
Grant 7,858,981 - Hattendorf , et al. December 28, 2 | 2010-12-28 |
CMOS transistor junction regions formed by a CVD etching and deposition sequence
Grant 7,812,394 - Murthy , et al. October 12, 2 | 2010-10-12 |
Graded high germanium compound films for strained semiconductor devices
App 20100148217 - Simonelli; Danielle ; et al. | 2010-06-17 |
Semiconductor device having self-aligned epitaxial source and drain extensions
Grant 7,732,285 - Sell , et al. June 8, 2 | 2010-06-08 |
Methods of forming low interface resistance contacts and structures formed thereby
App 20100109046 - Mehandru; Rishabh ; et al. | 2010-05-06 |
Semiconductor transistor having a stressed channel
App 20100102401 - Murthy; Anand ; et al. | 2010-04-29 |
Semiconductor transistor having a stressed channel
App 20100102356 - Murthy; Anand ; et al. | 2010-04-29 |
Formation of strain-inducing films
Grant 7,678,631 - Murthy , et al. March 16, 2 | 2010-03-16 |
Strained Transistor Integration For Cmos
App 20100044754 - Boyanov; Boyan ; et al. | 2010-02-25 |
Enhanced Dislocation Stress Transistor
App 20100038685 - Weber; Cory ; et al. | 2010-02-18 |
CMOS device and method of manufacturing same
Grant 7,663,192 - Sell , et al. February 16, 2 | 2010-02-16 |
Strained transistor integration for CMOS
Grant 7,662,689 - Boyanov , et al. February 16, 2 | 2010-02-16 |
Transistor gate electrode having conductor material layer
Grant 7,642,610 - Murthy , et al. January 5, 2 | 2010-01-05 |
Cmos Device And Method Of Manufacturing Same
App 20090321838 - Sell; Bernhard ; et al. | 2009-12-31 |
Transistor Gate Electrode Having Conductor Material Layer
App 20090315076 - Murthy; Anand ; et al. | 2009-12-24 |
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
App 20090152601 - Hattendorf; Michael L. ; et al. | 2009-06-18 |
Systems And Methods To Increase Uniaxial Compressive Stress In Tri-Gate Transistors
App 20090152589 - Rakshit; Titash ; et al. | 2009-06-18 |
Method for fabricating a heterojunction bipolar transistor
Grant 7,517,768 - Soman , et al. April 14, 2 | 2009-04-14 |
Selective etch for patterning a semiconductor film deposited non-selectively
Grant 7,517,772 - Rachmady , et al. April 14, 2 | 2009-04-14 |
Semiconductor Transistor Having A Stressed Channel
App 20090065808 - Murthy; Anand ; et al. | 2009-03-12 |
Semiconductor transistor having a stressed channel
Grant 7,492,017 - Murthy , et al. February 17, 2 | 2009-02-17 |
Cmos Transistor Junction Regions Formed By A Cvd Etching And Deposition Sequence
App 20090039390 - Murthy; Anand ; et al. | 2009-02-12 |
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
Grant 7,479,431 - Hattendorf , et al. January 20, 2 | 2009-01-20 |
CMOS transistor junction regions formed by a CVD etching and deposition sequence
Grant 7,479,432 - Murthy , et al. January 20, 2 | 2009-01-20 |
Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby
Grant 7,473,947 - Murthy , et al. January 6, 2 | 2009-01-06 |
Method To Deposit Silicon Film On A Substrate
App 20080237660 - Sharma; Ajay K. ; et al. | 2008-10-02 |
Semiconductor device having self-aligned epitaxial source and drain extensions
App 20080242037 - Sell; Bernhard ; et al. | 2008-10-02 |
Fabricating strained channel epitaxial source/drain transistors
Grant 7,427,775 - Murthy , et al. September 23, 2 | 2008-09-23 |
Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby
Grant 7,422,971 - Murthy , et al. September 9, 2 | 2008-09-09 |
Selective Etch For Patterning A Semiconductor Film Deposited Non-selectively
App 20080153237 - Rachmady; Willy ; et al. | 2008-06-26 |
MOS transistor structure and method of fabrication
Grant 7,391,087 - Murthy , et al. June 24, 2 | 2008-06-24 |
Multi-component strain-inducing semiconductor regions
App 20080124878 - Cook; Ted E. ; et al. | 2008-05-29 |
Selective etch for patterning a semiconductor film deposited non-selectively
Grant 7,364,976 - Rachmady , et al. April 29, 2 | 2008-04-29 |
Selective deposition to improve selectivity and structures formed thereby
Grant 7,358,547 - Murthy , et al. April 15, 2 | 2008-04-15 |
Method for improving transistor performance through reducing the salicide interface resistance
App 20080044968 - Murthy; Anand ; et al. | 2008-02-21 |
Formation of strain-inducing films
App 20070281411 - Murthy; Anand ; et al. | 2007-12-06 |
Structure and fabrication method of a selectively deposited capping layer on an epitaxially grown source drain
App 20070238236 - Cook; Ted JR. ; et al. | 2007-10-11 |
Selective etch for patterning a semiconductor film deposited non-selectively
App 20070224766 - Rachmady; Willy ; et al. | 2007-09-27 |
Method for improving transistor performance through reducing the salicide interface resistance
Grant 7,274,055 - Murthy , et al. September 25, 2 | 2007-09-25 |
Fabricating strained channel epitaxial source/drain transistors
App 20070194391 - Murthy; Anand ; et al. | 2007-08-23 |
Transistor gate electrode having conductor material layer
App 20070170464 - Murthy; Anand ; et al. | 2007-07-26 |
Fabricating strained channel epitaxial source/drain transistors
Grant 7,226,842 - Murthy , et al. June 5, 2 | 2007-06-05 |
Transistor gate electrode having conductor material layer
Grant 7,223,679 - Murthy , et al. May 29, 2 | 2007-05-29 |
CMOS transistor junction regions formed by a CVD etching and deposition sequence
App 20070105331 - Murthy; Anand ; et al. | 2007-05-10 |
Self aligned compact bipolar junction transistor layout and method of making same
Grant 7,202,514 - Ahmed , et al. April 10, 2 | 2007-04-10 |
CMOS transistor junction regions formed by a CVD etching and deposition sequence
Grant 7,195,985 - Murthy , et al. March 27, 2 | 2007-03-27 |
Methods for selective deposition to improve selectivity
Grant 7,129,139 - Murthy , et al. October 31, 2 | 2006-10-31 |
Semiconductor transistor having a stressed channel
App 20060151832 - Murthy; Anand ; et al. | 2006-07-13 |
CMOS transistor junction regions formed by a CVD etching and deposition sequence
App 20060148151 - Murthy; Anand ; et al. | 2006-07-06 |
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
App 20060134872 - Hattendorf; Michael L. ; et al. | 2006-06-22 |
Self aligned compact bipolar junction transistor layout, and method of making same
Grant 7,064,042 - Ahmed , et al. June 20, 2 | 2006-06-20 |
Bipolar junction transistor with improved extrinsic base region and method of fabrication
App 20060113634 - Ahmed; Shahriar ; et al. | 2006-06-01 |
Methods for selective deposition to improve selectivity
App 20060057809 - Murthy; Anand ; et al. | 2006-03-16 |
Bipolar junction transistor with improved extrinsic base region and method of fabrication
Grant 7,005,359 - Ahmed , et al. February 28, 2 | 2006-02-28 |
Double-gate transistor with enhanced carrier mobility
Grant 6,974,733 - Boyanov , et al. December 13, 2 | 2005-12-13 |
Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby
App 20050272187 - Murthy, Anand ; et al. | 2005-12-08 |
Method for improving transistor performance through reducing the salicide interface resistance
App 20050253200 - Murthy, Anand ; et al. | 2005-11-17 |
Methods for selective deposition to improve selectivity
App 20050230760 - Murthy, Anand ; et al. | 2005-10-20 |
Transistor structure and method of fabrication
Grant 6,952,040 - Chau , et al. October 4, 2 | 2005-10-04 |
Method for improving transistor performance through reducing the salicide interface resistance
Grant 6,949,482 - Murthy , et al. September 27, 2 | 2005-09-27 |
Semiconductor transistor having a stressed channel
App 20050184311 - Murthy, Anand ; et al. | 2005-08-25 |
Fabricating strained channel epitaxial source/drain transistors
App 20050179066 - Murthy, Anand ; et al. | 2005-08-18 |
Method for fabricating a bipolar transistor base
Grant 6,927,140 - Soman , et al. August 9, 2 | 2005-08-09 |
Transistor gate electrode having conductor material layer
App 20050145944 - Murthy, Anand ; et al. | 2005-07-07 |
Strained transistor integration for CMOS
App 20050136584 - Boyanov, Boyan ; et al. | 2005-06-23 |
Methods for selective deposition to improve selectivity
App 20050133832 - Murthy, Anand ; et al. | 2005-06-23 |
Method For Improving Transistor Performance Through Reducing The Salicide Interface Resistance
App 20050130454 - Murthy, Anand ; et al. | 2005-06-16 |
Bipolar junction transistor with improved extrinsic base region and method of fabrication
App 20050104160 - Ahmed, Shahriar ; et al. | 2005-05-19 |
Semiconductor transistor having a stressed channel
Grant 6,885,084 - Murthy , et al. April 26, 2 | 2005-04-26 |
Semiconductor transistor having a stressed channel
Grant 6,861,318 - Murthy , et al. March 1, 2 | 2005-03-01 |
Double-gate transistor with enhanced carrier mobility
App 20040253774 - Boyanov, Boyan ; et al. | 2004-12-16 |
Method for fabricating a heterojunction bipolar transistor
App 20040192002 - Soman, Ravindra ; et al. | 2004-09-30 |
Selective deposition of smooth silicon, germanium, and silicon-germanium alloy epitaxial films
App 20040188684 - Glass, Glenn A. ; et al. | 2004-09-30 |
MOS transistor structure and method of fabrication
Grant 6,797,556 - Murthy , et al. September 28, 2 | 2004-09-28 |
Semiconductor transistor having a stressed channel
App 20040084735 - Murthy, Anand ; et al. | 2004-05-06 |
Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
Grant 6,723,622 - Murthy , et al. April 20, 2 | 2004-04-20 |
Semiconductor transistor having a stressed channel
App 20040070035 - Murthy, Anand ; et al. | 2004-04-15 |
Method for fabricating a bipolar transistor base
App 20040048439 - Soman, Ravindra ; et al. | 2004-03-11 |
Selective NiGe wet etch for transistors with Ge body and/or Ge source/drain extensions
Grant 6,703,291 - Boyanov , et al. March 9, 2 | 2004-03-09 |
Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby
App 20040007724 - Murthy, Anand ; et al. | 2004-01-15 |
Self aligned compact bipolar junction transistor layout and method of making same
App 20030219939 - Ahmed, Shahriar ; et al. | 2003-11-27 |
Transistor structure and method of fabrication
Grant 6,653,700 - Chau , et al. November 25, 2 | 2003-11-25 |
Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
App 20030207127 - Murthy, Anand ; et al. | 2003-11-06 |
Semiconductor transistor having a stressed channel
Grant 6,621,131 - Murthy , et al. September 16, 2 | 2003-09-16 |
Method Of Forming A Germanium Film On A Semiconductor Substrate That Includes The Formation Of A Graded Silicon-germanium Buffer Layer Prior To The Formation Of A Germanium Layer
App 20030157787 - Murthy, Anand ; et al. | 2003-08-21 |
Self Aligned Compact Bipolar Junction Transistor Layout, And Method Of Making Same
App 20030109108 - Ahmed, Shahriar ; et al. | 2003-06-12 |
Novel MOS transistor structure and method of fabrication
App 20030098479 - Murthy, Anand ; et al. | 2003-05-29 |
Semiconductor transistor having a stressed channel
App 20030080361 - Murthy, Anand ; et al. | 2003-05-01 |
Novel transistor structure and method of fabrication
App 20030011037 - Chau, Robert S. ; et al. | 2003-01-16 |
Novel transistor structure and method of fabrication
App 20030001219 - Chau, Robert S. ; et al. | 2003-01-02 |
Novel Mos Transistor Structure And Method Of Fabrication
App 20020190284 - MURTHY, ANAND ; et al. | 2002-12-19 |
Polysilicon-germanium MOSFET gate electrodes
Grant 6,373,112 - Murthy , et al. April 16, 2 | 2002-04-16 |
Semiconductor device having deposited silicon regions and a method of fabrication
Grant 6,235,568 - Murthy , et al. May 22, 2 | 2001-05-22 |
Cobalt salicidation method on a silicon germanium film
Grant 6,214,679 - Murthy , et al. April 10, 2 | 2001-04-10 |
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