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Murota; Junichi Patent Filings

Murota; Junichi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Murota; Junichi.The latest application filed is for "semiconductor device having a metal-semiconductor junction with a reduced contact resistance".

Company Profile
0.9.8
  • Murota; Junichi - Tokyo JP
  • Murota; Junichi - Sendai JP
  • Murota, Junichi - Sendai-shi JP
  • Murota; Junichi - Isehara JP
  • Murota; Junichi - Kodaira JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method of manufacturing a semiconductor device and a semiconductor manufacture system
Grant 6,949,474 - Moriya , et al. September 27, 2
2005-09-27
Semiconductor device having a metal-semiconductor junction with a reduced contact resistance
Grant 6,800,544 - Murota , et al. October 5, 2
2004-10-05
Semiconductor wafer and method for producing the same
Grant 6,770,507 - Abe , et al. August 3, 2
2004-08-03
Semiconductor device having a metal-semiconductor junction with a reduced contact resistance
App 20040033686 - Murota, Junichi ;   et al.
2004-02-19
Method of manufacturing a semiconductor device and a semiconductor manufacture system
App 20040007185 - Moriya, Atsushi ;   et al.
2004-01-15
Semiconductor device having a metal-semiconductor junction with a reduced contact resistance
Grant 6,621,145 - Murota , et al. September 16, 2
2003-09-16
Semiconductor wafer and method for producing the same
App 20020182827 - Abe, Takao ;   et al.
2002-12-05
Method for forming a fine structure on a surface of a semiconductor material, semiconductor materials provided with such a fine structure, and devices made of such semiconductor materials
App 20020119663 - Matsuura, Takashi ;   et al.
2002-08-29
MOS field-effect transistor comprising layered structure including Si layer and SiGe layer OR SiGeC layer as channel regions
App 20020109135 - Murota, Junichi ;   et al.
2002-08-15
Semiconductor device having a metal-semiconductor junction with a reduced contact resistance
App 20020027285 - Murota, Junichi ;   et al.
2002-03-07
Mosfet with strained channel layer
App 20020008289 - Murota, Junichi ;   et al.
2002-01-24
Laminate structure and method of manufacturing the same
App 20010016247 - Matsuura, Takashi ;   et al.
2001-08-23
Vapor depositing method
Grant 5,705,224 - Murota , et al. January 6, 1
1998-01-06
Draft chamber
Grant 4,976,815 - Hiratsuka , et al. December 11, 1
1990-12-11
Chemical vapor deposition apparatus
Grant 4,503,807 - Nakayama , et al. March 12, 1
1985-03-12
Irreversible semiconductor switching element and semiconductor memory device utilizing the same
Grant 4,146,902 - Tanimoto , et al. March 27, 1
1979-03-27
Insulated gate type field effect transistors
Grant 4,074,300 - Sakai , et al. February 14, 1
1978-02-14

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