Mukai; Kiichiro
Patent Applications and Registrations
Patent applications and USPTO patent grants for Mukai; Kiichiro.The latest application filed is for "integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate".
- Mukai; Kiichiro - Hachioji JP
- Mukai; Kiichiro - Tokyo JP
| Patent | Date |
|---|---|
| Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate Grant 6,747,339 - Mukai , et al. June 8, 2 | 2004-06-08 |
| Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate Grant 5,391,915 - Mukai , et al. * February 21, 1 | 1995-02-21 |
| Method of manufacturing a semiconductor device Grant 5,292,673 - Shinriki , et al. March 8, 1 | 1994-03-08 |
| Dry etching method Grant 5,147,500 - Tachi , et al. September 15, 1 | 1992-09-15 |
| Process for producing a semiconductor device Grant 5,079,191 - Shinriki , et al. January 7, 1 | 1992-01-07 |
| Superconducting alloys comprising tungsten, molybdenum, silicon and oxygen Grant 5,013,526 - Kobayashi , et al. May 7, 1 | 1991-05-07 |
| Dry etching apparatus Grant 4,956,043 - Kanetomo , et al. September 11, 1 | 1990-09-11 |
| Etching method Grant 4,943,344 - Tachi , et al. July 24, 1 | 1990-07-24 |
| Semiconductor capacitor device with dual dielectric Grant 4,937,650 - Shinriki , et al. June 26, 1 | 1990-06-26 |
| Titanium nitride film in contact hole with large aspect ratio Grant 4,897,709 - Yokoyama , et al. January 30, 1 | 1990-01-30 |
| Semiconductor device Grant 4,891,684 - Nishioka , et al. January 2, 1 | 1990-01-02 |
| Process for surface treatment Grant 4,857,137 - Tachi , et al. August 15, 1 | 1989-08-15 |
| Method of forming a copper film by chemical vapor deposition Grant 4,842,891 - Miyazaki , et al. June 27, 1 | 1989-06-27 |
| Semiconductor device Grant 4,636,833 - Nishioka , et al. January 13, 1 | 1987-01-13 |
| Thin film deposition Grant 4,599,135 - Tsunekawa , et al. July 8, 1 | 1986-07-08 |
| Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations Grant 4,570,175 - Miyao , et al. February 11, 1 | 1986-02-11 |
| Semiconductor device with high density low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating layer Grant 4,365,264 - Mukai , et al. December 21, 1 | 1982-12-21 |
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