| Patent | Date |
|---|
Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials
Grant 8,796,807 - Stephan , et al. August 5, 2 | 2014-08-05 |
Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backside
Grant 8,564,120 - Mowry , et al. October 22, 2 | 2013-10-22 |
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
Grant 8,530,894 - Mowry , et al. September 10, 2 | 2013-09-10 |
Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation
Grant 8,507,351 - Mowry , et al. August 13, 2 | 2013-08-13 |
Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure
Grant 8,373,244 - Mowry , et al. February 12, 2 | 2013-02-12 |
Test Structure For Monitoring Process Characteristics For Forming Embedded Semiconductor Alloys In Drain/source Regions
App 20120223309 - Mowry; Anthony ; et al. | 2012-09-06 |
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
Grant 8,227,266 - Mowry , et al. July 24, 2 | 2012-07-24 |
Cold temperature control in a semiconductor device
Grant 8,212,184 - Mowry , et al. July 3, 2 | 2012-07-03 |
Method for creating tensile strain by applying stress memorization techniques at close proximity to the gate electrode
Grant 8,129,236 - Gehring , et al. March 6, 2 | 2012-03-06 |
Temperature Monitoring In A Semiconductor Device By Using A Pn Junction Based On Silicon/germanium Materials
App 20120025276 - Stephan; Rolf ; et al. | 2012-02-02 |
In situ formed drain and source regions in a silicon/germanium containing transistor device
Grant 8,093,634 - Mowry , et al. January 10, 2 | 2012-01-10 |
Method of forming an interlayer dielectric material having different removal rates during CMP
Grant 8,048,330 - Richter , et al. November 1, 2 | 2011-11-01 |
Dopant Profile Tuning For Mos Devices By Adapting A Spacer Width Prior To Implantation
App 20110230039 - Mowry; Anthony ; et al. | 2011-09-22 |
Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation
Grant 7,977,179 - Mowry , et al. July 12, 2 | 2011-07-12 |
Semiconductor device having a strained semiconductor alloy concentration profile
Grant 7,939,399 - Mowry , et al. May 10, 2 | 2011-05-10 |
Increasing stress transfer efficiency in a transistor by reducing spacer width during the drain/source implantation sequence
Grant 7,923,338 - Wiatr , et al. April 12, 2 | 2011-04-12 |
Method for selectively forming strain in a transistor by a stress memorization technique without adding additional lithography steps
Grant 7,906,385 - Lenski , et al. March 15, 2 | 2011-03-15 |
Blocking pre-amorphization of a gate electrode of a transistor
Grant 7,879,667 - Mowry , et al. February 1, 2 | 2011-02-01 |
Reduction of memory instability by local adaptation of re-crystallization conditions in a cache area of a semiconductor device
Grant 7,811,876 - Scott , et al. October 12, 2 | 2010-10-12 |
Method for creating tensile strain by repeatedly applied stress memorization techniques
Grant 7,790,537 - Wei , et al. September 7, 2 | 2010-09-07 |
Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region
Grant 7,772,077 - Gehring , et al. August 10, 2 | 2010-08-10 |
Heat Dissipation In Temperature Critical Device Areas Of Semiconductor Devices By Heat Pipes Connecting To The Substrate Backside
App 20100164093 - Mowry; Anthony ; et al. | 2010-07-01 |
Test Structure For Monitoring Process Characteristics For Forming Embedded Semiconductor Alloys In Drain/source Regions
App 20100155727 - MOWRY; ANTHONY ; et al. | 2010-06-24 |
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
Grant 7,713,763 - Mowry , et al. May 11, 2 | 2010-05-11 |
In Situ Formed Drain And Source Regions In A Silicon/germanium Containing Transistor Device
App 20090294860 - Mowry; Anthony ; et al. | 2009-12-03 |
Cold Temperature Control In A Semiconductor Device
App 20090295457 - Mowry; Anthony ; et al. | 2009-12-03 |
Method For Creating Tensile Strain By Applying Stress Memorization Techniques At Close Proximity To The Gate Electrode
App 20090246926 - Gehring; Andreas ; et al. | 2009-10-01 |
Increasing Stress Transfer Efficiency In A Transistor By Reducing Spacer Width During The Drain/source Implantation Sequence
App 20090246927 - Wiatr; Maciej ; et al. | 2009-10-01 |
Temperature Monitoring In A Semiconductor Device By Using An Pn Junction Based On Silicon/germanium Material
App 20090218601 - Stephan; Rolf ; et al. | 2009-09-03 |
Reduction Of Memory Instability By Local Adaptation Of Re-crystallization Conditions In A Cache Area Of A Semiconductor Device
App 20090221115 - Scott; Casey ; et al. | 2009-09-03 |
Method For Selectively Forming Strain In A Transistor By A Stress Memorization Technique Without Adding Additional Lithography Steps
App 20090197381 - Lenski; Markus ; et al. | 2009-08-06 |
Temperature Monitoring In A Semiconductor Device By Thermocouples Distributed In The Contact Structure
App 20090166794 - Mowry; Anthony ; et al. | 2009-07-02 |
Test Structure For Monitoring Process Characteristics For Forming Embedded Semiconductor Alloys In Drain/source Regions
App 20090166618 - Mowry; Anthony ; et al. | 2009-07-02 |
Method Of Forming An Interlayer Dielectric Material Having Different Removal Rates During Cmp
App 20090170319 - Richter; Ralf ; et al. | 2009-07-02 |
Dopant Profile Tuning For Mos Devices By Adapting A Spacer Width Prior To Implantation
App 20090108295 - Mowry; Anthony ; et al. | 2009-04-30 |
Blocking Pre-amorphization Of A Gate Electrode Of A Transistor
App 20090001371 - Mowry; Anthony ; et al. | 2009-01-01 |
Method For Creating Tensile Strain By Repeatedly Applied Stress Memorization Techniques
App 20080237723 - Wei; Andy ; et al. | 2008-10-02 |
Semiconductor Device Having A Strained Semiconductor Alloy Concentration Profile
App 20080203427 - Mowry; Anthony ; et al. | 2008-08-28 |
Method Of Forming A Semiconductor Structure Comprising A Field Effect Transistor Having A Stressed Channel Region
App 20080102590 - Gehring; Andreas ; et al. | 2008-05-01 |
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