| Patent | Date |
|---|
High Efficiency Ultraviolet Light Emitting Diode With Electron Tunnelling
App 20200287084 - Liao; Yitao ; et al. | 2020-09-10 |
Ultraviolet light emitting diode structures and methods of manufacturing the same
Grant 10,593,830 - Liao , et al. | 2020-03-17 |
High efficiency ultraviolet light emitting diode with band structure potential fluctuations
Grant 10,535,801 - Liao , et al. Ja | 2020-01-14 |
Ultraviolet light emitting diodes
Grant 10,361,343 - Brummer , et al. | 2019-07-23 |
Ultraviolet light emitting diode structures and methods of manufacturing the same
Grant 9,780,254 - Liao , et al. October 3, 2 | 2017-10-03 |
Ultraviolet Light Emitting Diodes
App 20170200865 - BRUMMER; Gordon C. ; et al. | 2017-07-13 |
High efficiency ultraviolet light emitting diode with band structure potential fluctuations
Grant 9,627,580 - Liao , et al. April 18, 2 | 2017-04-18 |
High Efficiency Ultraviolet Light Emitting Diode With Band Structure Potential Fluctuations
App 20160211411 - Liao; Yitao ; et al. | 2016-07-21 |
Ultraviolet light emitting diode structures and methods of manufacturing the same
Grant 9,318,652 - Liao , et al. April 19, 2 | 2016-04-19 |
Ultraviolet light emitting diode structures and methods of manufacturing the same
Grant 8,987,755 - Liao , et al. March 24, 2 | 2015-03-24 |
Ultraviolet light emitting diode structures and methods of manufacturing the same
Grant 8,723,189 - Liao , et al. May 13, 2 | 2014-05-13 |
High Efficiency Ultraviolet Light Emitting Diode With Band Structure Potential Fluctuations
App 20140103289 - Liao; Yitao ; et al. | 2014-04-17 |
PLANARIZATION OF GaN BY PHOTORESIST TECHNIQUE USING AN INDUCTIVELY COUPLEDPLASMA
App 20140061861 - Moustakas; Theodore D. ; et al. | 2014-03-06 |
Optical devices featuring nonpolar textured semiconductor layers
Grant 8,592,800 - Moustakas , et al. November 26, 2 | 2013-11-26 |
Planarization of GaN by photoresist technique using an inductively coupled plasma
Grant 8,257,987 - Moustakas , et al. September 4, 2 | 2012-09-04 |
GaN-based permeable base transistor and method of fabrication
Grant 8,247,843 - Gunter , et al. August 21, 2 | 2012-08-21 |
Optical devices featuring textured semiconductor layers
Grant 8,237,175 - Moustakas , et al. August 7, 2 | 2012-08-07 |
Optical Devices Featuring Textured Semiconductor Layers
App 20120058586 - Moustakas; Theodore D. ; et al. | 2012-03-08 |
GaN-based permeable base transistor and method of fabrication
Grant RE42,955 - Gunter , et al. November 22, 2 | 2011-11-22 |
Optical devices featuring textured semiconductor layers
Grant 8,035,113 - Moustakas , et al. October 11, 2 | 2011-10-11 |
Optical Devices Featuring Nonpolar Textured Semiconductor Layers
App 20110024722 - Moustakas; Theodore D. ; et al. | 2011-02-03 |
Optical devices featuring textured semiconductor layers
Grant 7,777,241 - Moustakas , et al. August 17, 2 | 2010-08-17 |
Semiconductor device having group III nitride buffer layer and growth layers
Grant 7,663,157 - Moustakas February 16, 2 | 2010-02-16 |
Planarization of Gan by Photoresist Technique Using an Inductively Coupled Plasma
App 20090236693 - Moustakas; Theodore D. ; et al. | 2009-09-24 |
GaN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
App 20080265259 - Gunter; Liberty L. ; et al. | 2008-10-30 |
GaN-based permeable base transistor and method of fabrication
Grant 7,413,958 - Gunter , et al. August 19, 2 | 2008-08-19 |
Semiconductor device having group III nitride buffer layer and growth layers
Grant 7,235,819 - Moustakas June 26, 2 | 2007-06-26 |
Semiconductor device having group III nitride buffer layer and growth layers
App 20070120144 - Moustakas; Theodore D. | 2007-05-31 |
Optical devices featuring textured semiconductor layers
App 20070120141 - Moustakas; Theodore D. ; et al. | 2007-05-31 |
Optical devices featuring textured semiconductor layers
App 20050242364 - Moustakas, Theodore D. ; et al. | 2005-11-03 |
Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
Grant 6,953,703 - Moustakas October 11, 2 | 2005-10-11 |
Growth of high temperature, high power, high speed electronics
App 20040104384 - Moustakas, Theodore D. ; et al. | 2004-06-03 |
Semiconductor device having group III nitride buffer layer and growth layers
App 20040051099 - Moustakas, Theodore D. | 2004-03-18 |
Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
App 20040053478 - Moustakas, Theodore D. | 2004-03-18 |
Semiconductor piezoresistor
Grant 6,441,716 - Doppalapudi , et al. August 27, 2 | 2002-08-27 |
Semiconductor piezoresistor
App 20020070841 - Doppalapudi, Dharanipal ; et al. | 2002-06-13 |
Semiconductor piezoresistor
Grant 6,275,137 - Doppalapudi , et al. August 14, 2 | 2001-08-14 |
Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
Grant 6,123,768 - Moustakas September 26, 2 | 2000-09-26 |
Photodetectors using III-V nitrides
Grant 5,847,397 - Moustakas December 8, 1 | 1998-12-08 |
Device and method for epitaxially growing gallium nitride layers
Grant 5,725,674 - Moustakas , et al. March 10, 1 | 1998-03-10 |
Highly insulating monocrystalline gallium nitride thin films
Grant 5,686,738 - Moustakas November 11, 1 | 1997-11-11 |
Photodetectors using III-V nitrides
Grant 5,677,538 - Moustakas , et al. October 14, 1 | 1997-10-14 |
Method for epitaxially growing gallium nitride layers
Grant 5,633,192 - Moustakas , et al. May 27, 1 | 1997-05-27 |
Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
Grant 5,385,862 - Moustakas January 31, 1 | 1995-01-31 |
Defect-induced control of the structure of boron nitride
Grant 5,296,119 - Moustakas March 22, 1 | 1994-03-22 |
Hybrid method of making an amorphous silicon P-I-N semiconductor device
Grant 4,407,710 - Moustakas , et al. October 4, 1 | 1983-10-04 |
Plasma etching of amorphous silicon (SE-35)
Grant 4,285,762 - Moustakas August 25, 1 | 1981-08-25 |
Gradient doping in amorphous silicon
Grant 4,251,289 - Moustakas , et al. February 17, 1 | 1981-02-17 |
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