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Patent applications and USPTO patent grants for Motsnyi; Vasyl.The latest application filed is for "method of forming a semiconductor device structure".
Patent | Date |
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Method of forming a semiconductor device structure Grant 11,282,702 - Soussan , et al. March 22, 2 | 2022-03-22 |
Method Of Forming A Semiconductor Device Structure App 20210111021 - SOUSSAN; Philippe ;   et al. | 2021-04-15 |
Method for fabricating CMOS compatible contact layers in semiconductor devices Grant 9,698,309 - Cavaco , et al. July 4, 2 | 2017-07-04 |
Method for Fabricating CMOS Compatible Contact Layers in Semiconductor Devices App 20160118542 - Cavaco; Celso ;   et al. | 2016-04-28 |
Method for Fabricating CMOS Compatible Contact Layers in Semiconductor Devices App 20150162212 - Cavaco; Celso ;   et al. | 2015-06-11 |
Episubstrates for Selective Area Growth of Group III-V Material and a Method for Fabricating a Group III-V Material on a Silicon Substrate App 20150115277 - Motsnyi; Vasyl ;   et al. | 2015-04-30 |
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