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name:-0.0073649883270264
name:-0.0090389251708984
name:-0.0012660026550293
Motika; Stephen Andrew Patent Filings

Motika; Stephen Andrew

Patent Applications and Registrations

Patent applications and USPTO patent grants for Motika; Stephen Andrew.The latest application filed is for "selective etching of silicon dioxide compositions".

Company Profile
0.11.14
  • Motika; Stephen Andrew - Kutztown PA US
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Selective etching of silicon dioxide compositions
Grant 8,372,756 - Mitchell , et al. February 12, 2
2013-02-12
Selective Etching of Silicon Dioxide Compositions
App 20100055921 - Mitchell; Glenn Michael ;   et al.
2010-03-04
Method for removing carbon-containing residues from a substrate
Grant 7,581,549 - Johnson , et al. September 1, 2
2009-09-01
Cyclopentene As A Precursor For Carbon-Based Films
App 20090087796 - Vrtis; Raymond Nicholas ;   et al.
2009-04-02
Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
Grant 7,357,138 - Ji , et al. April 15, 2
2008-04-15
Detecting the endpoint of a cleaning process
App 20080047579 - Ji; Bing ;   et al.
2008-02-28
Xenon recovery system
Grant 7,285,154 - Karwacki, Jr. , et al. October 23, 2
2007-10-23
Use Of Hypofluorites, Fluoroperoxides, And/Or Fluorotrioxides As Oxidizing Agent In Fluorocarbon Etch Plasmas
App 20070224829 - Ji; Bing ;   et al.
2007-09-27
Controlled heating and cooling of mixed conducting metal oxide materials
Grant 7,122,072 - Carolan , et al. October 17, 2
2006-10-17
Method to protect internal components of semiconductor processing equipment using layered superlattice materials
Grant 7,119,032 - Ji , et al. October 10, 2
2006-10-10
Method for cleaning deposition chambers for high dielectric constant materials
Grant 7,055,263 - Wu , et al. June 6, 2
2006-06-06
Xenon recovery system
App 20060107831 - Karwacki; Eugene Joseph JR. ;   et al.
2006-05-25
Passivating ALD reactor chamber internal surfaces to prevent residue buildup
App 20060040054 - Pearlstein; Ronald Martin ;   et al.
2006-02-23
Method to protect internal components of semiconductor processing equipment using layered superlattice materials
App 20060040508 - Ji; Bing ;   et al.
2006-02-23
Method for removing carbon-containing residues from a substrate
App 20060027249 - Johnson; Andrew David ;   et al.
2006-02-09
Controlled heating and cooling of mixed conducting metal oxide materials
App 20050106439 - Carolan, Michael Francis ;   et al.
2005-05-19
Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications
App 20050011859 - Ji, Bing ;   et al.
2005-01-20
Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
App 20050014383 - Ji, Bing ;   et al.
2005-01-20
Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
App 20040129671 - Ji, Bing ;   et al.
2004-07-08
Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
App 20040011380 - Ji, Bing ;   et al.
2004-01-22
Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
App 20040014327 - Ji, Bing ;   et al.
2004-01-22
Fluid separation devices capable of operating under high carbon dioxide partial pressures which utilize creep-resistant solid-state membranes formed from a mixed conducting multicomponent metallic oxide
Grant 6,056,807 - Carolan , et al. May 2, 2
2000-05-02
Compositions capable of operating under high oxygen partial pressures for use in solid-state oxygen producing devices
Grant 5,817,597 - Carolan , et al. October 6, 1
1998-10-06
Coompositions capable of operating under high carbon dioxide partial pressures for use in solid-state oxygen producing devices
Grant 5,712,220 - Carolan , et al. January 27, 1
1998-01-27

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