loadpatents
name:-0.016194105148315
name:-0.015567779541016
name:-0.00053906440734863
Morizumi; Tomonori Patent Filings

Morizumi; Tomonori

Patent Applications and Registrations

Patent applications and USPTO patent grants for Morizumi; Tomonori.The latest application filed is for "bandpass filter for use in light emitting device and light emitting device using the same".

Company Profile
0.15.13
  • Morizumi; Tomonori - Anan JP
  • Morizumi; Tomonori - Anan-shi JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Bandpass filter for use in light emitting device and light emitting device using the same
Grant 9,518,718 - Sanga , et al. December 13, 2
2016-12-13
Nitride semiconductor laser element
Grant 8,900,901 - Masui , et al. December 2, 2
2014-12-02
Bandpass Filter For Use In Light Emitting Device And Light Emitting Device Using The Same
App 20140185299 - SANGA; Daisuke ;   et al.
2014-07-03
Nitride semiconductor laser element and method for manufacturing same
Grant 8,654,808 - Morizumi February 18, 2
2014-02-18
Nitride Semiconductor Laser Element And Method For Manufacturing Same
App 20120033698 - MORIZUMI; Tomonori
2012-02-09
Nitride semiconductor laser element
Grant 8,102,891 - Morizumi , et al. January 24, 2
2012-01-24
Nitride semiconductor laser element having nitride semiconductor substrate and nitride semiconductor layer laminated thereon with nitride semiconductor substrate and nitride semiconductor layer having recesses formed in high dislocation density region of nitride semiconductor substrate and nitride s
Grant 7,830,940 - Masui , et al. November 9, 2
2010-11-09
Nitride Semiconductor Laser Element
App 20100248406 - MASUI; Shingo ;   et al.
2010-09-30
Nitride semiconductor laser element
Grant 7,804,872 - Morizumi September 28, 2
2010-09-28
Nitride semiconductor laser element
Grant 7,773,650 - Masui , et al. August 10, 2
2010-08-10
Nitride semiconductor laser element
Grant 7,764,722 - Michiue , et al. July 27, 2
2010-07-27
Nitride Semiconductor Laser Element
App 20100158066 - MORIZUMI; Tomonori ;   et al.
2010-06-24
Nitride semiconductor laser element
Grant 7,701,995 - Morizumi , et al. April 20, 2
2010-04-20
Nitride semiconductor laser element
Grant 7,668,218 - Michiue , et al. February 23, 2
2010-02-23
Nitride semiconductor laser element
Grant 7,646,798 - Michiue , et al. January 12, 2
2010-01-12
Optical component, light emitting device, and method for manufacturing optical component
Grant 7,600,924 - Hama , et al. October 13, 2
2009-10-13
Nitride semiconductor laser element having impurity introduction region
Grant 7,521,729 - Morizumi , et al. April 21, 2
2009-04-21
Nitride Semiconductor Laser Element
App 20090010294 - Morizumi; Tomonori ;   et al.
2009-01-08
Nitride Semiconductor Laser Element
App 20080304530 - MORIZUMI; Tomonori
2008-12-11
Nitride Semiconductor Laser Element
App 20080205464 - MICHIUE; Atsuo ;   et al.
2008-08-28
Nitride Semiconductor Laser Element
App 20080198886 - MICHIUE; Atsuo ;   et al.
2008-08-21
Nitride Semiconductor Laser Element
App 20080181274 - Michiue; Atsuo ;   et al.
2008-07-31
Nitride Semiconductor Laser Element
App 20080157106 - Masui; Shingo ;   et al.
2008-07-03
Nitride Semiconductor Laser Element And Method For Manufacturing Same
App 20080056322 - Masui; Shingo ;   et al.
2008-03-06
Nitride semiconductor laser element and method for manufacturing the same
App 20070184591 - Morizumi; Tomonori ;   et al.
2007-08-09
Optical component, light emitting device, and method for manufacturing optical component
App 20070092184 - Hama; Atsutomo ;   et al.
2007-04-26

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