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Bandpass filter for use in light emitting device and light emitting device using the same Grant 9,518,718 - Sanga , et al. December 13, 2 | 2016-12-13 |
Nitride semiconductor laser element Grant 8,900,901 - Masui , et al. December 2, 2 | 2014-12-02 |
Bandpass Filter For Use In Light Emitting Device And Light Emitting Device Using The Same App 20140185299 - SANGA; Daisuke ;   et al. | 2014-07-03 |
Nitride semiconductor laser element and method for manufacturing same Grant 8,654,808 - Morizumi February 18, 2 | 2014-02-18 |
Nitride Semiconductor Laser Element And Method For Manufacturing Same App 20120033698 - MORIZUMI; Tomonori | 2012-02-09 |
Nitride semiconductor laser element Grant 8,102,891 - Morizumi , et al. January 24, 2 | 2012-01-24 |
Nitride semiconductor laser element having nitride semiconductor substrate and nitride semiconductor layer laminated thereon with nitride semiconductor substrate and nitride semiconductor layer having recesses formed in high dislocation density region of nitride semiconductor substrate and nitride s Grant 7,830,940 - Masui , et al. November 9, 2 | 2010-11-09 |
Nitride Semiconductor Laser Element App 20100248406 - MASUI; Shingo ;   et al. | 2010-09-30 |
Nitride semiconductor laser element Grant 7,804,872 - Morizumi September 28, 2 | 2010-09-28 |
Nitride semiconductor laser element Grant 7,773,650 - Masui , et al. August 10, 2 | 2010-08-10 |
Nitride semiconductor laser element Grant 7,764,722 - Michiue , et al. July 27, 2 | 2010-07-27 |
Nitride Semiconductor Laser Element App 20100158066 - MORIZUMI; Tomonori ;   et al. | 2010-06-24 |
Nitride semiconductor laser element Grant 7,701,995 - Morizumi , et al. April 20, 2 | 2010-04-20 |
Nitride semiconductor laser element Grant 7,668,218 - Michiue , et al. February 23, 2 | 2010-02-23 |
Nitride semiconductor laser element Grant 7,646,798 - Michiue , et al. January 12, 2 | 2010-01-12 |
Optical component, light emitting device, and method for manufacturing optical component Grant 7,600,924 - Hama , et al. October 13, 2 | 2009-10-13 |
Nitride semiconductor laser element having impurity introduction region Grant 7,521,729 - Morizumi , et al. April 21, 2 | 2009-04-21 |
Nitride Semiconductor Laser Element App 20090010294 - Morizumi; Tomonori ;   et al. | 2009-01-08 |
Nitride Semiconductor Laser Element App 20080304530 - MORIZUMI; Tomonori | 2008-12-11 |
Nitride Semiconductor Laser Element App 20080205464 - MICHIUE; Atsuo ;   et al. | 2008-08-28 |
Nitride Semiconductor Laser Element App 20080198886 - MICHIUE; Atsuo ;   et al. | 2008-08-21 |
Nitride Semiconductor Laser Element App 20080181274 - Michiue; Atsuo ;   et al. | 2008-07-31 |
Nitride Semiconductor Laser Element App 20080157106 - Masui; Shingo ;   et al. | 2008-07-03 |
Nitride Semiconductor Laser Element And Method For Manufacturing Same App 20080056322 - Masui; Shingo ;   et al. | 2008-03-06 |
Nitride semiconductor laser element and method for manufacturing the same App 20070184591 - Morizumi; Tomonori ;   et al. | 2007-08-09 |
Optical component, light emitting device, and method for manufacturing optical component App 20070092184 - Hama; Atsutomo ;   et al. | 2007-04-26 |