loadpatents
name:-0.05207896232605
name:-0.10533499717712
name:-0.011893033981323
Moriya; Yoshihiko Patent Filings

Moriya; Yoshihiko

Patent Applications and Registrations

Patent applications and USPTO patent grants for Moriya; Yoshihiko.The latest application filed is for "transistor device".

Company Profile
0.16.9
  • Moriya; Yoshihiko - Hitachi N/A JP
  • Moriya; Yoshihiko - Hitachi-shi JP
  • Moriya; Yoshihiko - Shizuoka JP
  • MORIYA; Yoshihiko - Shizuoka-ken JP
  • Moriya; Yoshihiko - Iwata JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Transistor device
Grant 8,664,697 - Meguro , et al. March 4, 2
2014-03-04
Compound semiconductor device including aln layer of controlled skewness
Grant 8,440,549 - Imanishi , et al. May 14, 2
2013-05-14
Transistor Device
App 20130009212 - MEGURO; Takeshi ;   et al.
2013-01-10
Compound semiconductor device including AIN layer of controlled skewness
Grant 8,264,005 - Imanishi , et al. September 11, 2
2012-09-11
Compound semiconductor device including AIN layer of controlled skewness
Grant 8,264,006 - Imanishi , et al. September 11, 2
2012-09-11
Compound Semiconductor Device Including Ain Layer Of Controlled Skewness
App 20120067275 - Imanishi; Kenji ;   et al.
2012-03-22
Compound semiconductor device including AIN layer of controlled skewness
Grant 8,044,492 - Imanishi , et al. October 25, 2
2011-10-25
Nitride semiconductor epitaxial wafer and nitride semiconductor device
Grant 7,948,009 - Moriya , et al. May 24, 2
2011-05-24
Compound Semiconductor Device Including Ain Layer Of Controlled Skewness
App 20100207124 - IMANISHI; Kenji ;   et al.
2010-08-19
Compound Semiconductor Device Including Ain Layer Of Controlled Skewness
App 20100207167 - IMANISHI; Kenji ;   et al.
2010-08-19
Nitride semiconductor epitaxial wafer and nitride semiconductor device
App 20090236634 - Moriya; Yoshihiko ;   et al.
2009-09-24
Transistor epitaxial wafer and transistor produced by using same
Grant 7,485,946 - Moriya February 3, 2
2009-02-03
High-power Engine And Vehicle
App 20090007860 - Kato; Ryusuke ;   et al.
2009-01-08
Compound Semiconductor Device Including Ain Layer Of Controlled Skewness
App 20080237610 - IMANISHI; Kenji ;   et al.
2008-10-02
Exhaust system, and engine device and vehicle with the same
Grant 7,418,818 - Kato , et al. September 2, 2
2008-09-02
Transistor epitaxial wafer and transistor produced by using same
App 20070158685 - Moriya; Yoshihiko
2007-07-12
Exhaust System, And Engine Device And Vehicle With The Same
App 20060266026 - KATO; Ryusuke ;   et al.
2006-11-30
Ignition control system for engine
Grant 6,085,733 - Motoyama , et al. July 11, 2
2000-07-11
Exhaust timing control device for two-cycle engine
Grant 5,878,702 - Motoyama , et al. March 9, 1
1999-03-09
Fuel injection control
Grant 5,613,468 - Ibara , et al. March 25, 1
1997-03-25
Air fuel injector and control
Grant 5,205,254 - Ito , et al. April 27, 1
1993-04-27
Solenoid valve device
Grant 5,203,538 - Matsunaga , et al. April 20, 1
1993-04-20
Fuel injection system
Grant 5,193,508 - Motoyama , et al. March 16, 1
1993-03-16

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