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Patent applications and USPTO patent grants for Moriya; Takahiko.The latest application filed is for "method of cleaning reaction tube and exhaustion piping system in heat processing apparatus".
Patent | Date |
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Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus Grant 5,637,153 - Niino , et al. June 10, 1 | 1997-06-10 |
Method of forming a conductive film on an insulating region of a substrate Grant 5,580,615 - Itoh , et al. December 3, 1 | 1996-12-03 |
Method of cleaning reaction tube Grant 5,380,370 - Niino , et al. * January 10, 1 | 1995-01-10 |
Method of manufacturing silicon nitride film Grant 5,234,869 - Mikata , et al. August 10, 1 | 1993-08-10 |
Method of forming refractory metal film Grant 5,223,455 - Itoh , et al. June 29, 1 | 1993-06-29 |
Vertical heat treatment apparatus Grant 5,048,800 - Miyazaki , et al. September 17, 1 | 1991-09-17 |
Film forming method and film forming device Grant 5,015,330 - Okumura , et al. May 14, 1 | 1991-05-14 |
Method for forming thin film of refractory material Grant 4,746,549 - Ito , et al. May 24, 1 | 1988-05-24 |
Semiconductor device Grant 4,699,801 - Ito , et al. October 13, 1 | 1987-10-13 |
Method of forming a thin film of a metal or metal compound on a substrate Grant 4,650,698 - Moriya , et al. March 17, 1 | 1987-03-17 |
Method of forming a metal film on a selectively diffused layer Grant 4,597,167 - Moriya , et al. July 1, 1 | 1986-07-01 |
Process for forming multi-layer interconnections Grant 4,582,563 - Hazuki , et al. April 15, 1 | 1986-04-15 |
Method for producing semiconductor device Grant 4,377,438 - Moriya , et al. March 22, 1 | 1983-03-22 |
Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode Grant 4,283,439 - Higashinakagawa , et al. August 11, 1 | 1981-08-11 |
Method of making a semiconductor device Grant 4,063,973 - Kirita , et al. December 20, 1 | 1977-12-20 |
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