loadpatents
name:-0.00043582916259766
name:-0.015699863433838
name:-0.0023610591888428
Moriya; Takahiko Patent Filings

Moriya; Takahiko

Patent Applications and Registrations

Patent applications and USPTO patent grants for Moriya; Takahiko.The latest application filed is for "method of cleaning reaction tube and exhaustion piping system in heat processing apparatus".

Company Profile
0.15.0
  • Moriya; Takahiko - Yokohama JP
  • Moriya; Takahiko - Yokosuka JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus
Grant 5,637,153 - Niino , et al. June 10, 1
1997-06-10
Method of forming a conductive film on an insulating region of a substrate
Grant 5,580,615 - Itoh , et al. December 3, 1
1996-12-03
Method of cleaning reaction tube
Grant 5,380,370 - Niino , et al. * January 10, 1
1995-01-10
Method of manufacturing silicon nitride film
Grant 5,234,869 - Mikata , et al. August 10, 1
1993-08-10
Method of forming refractory metal film
Grant 5,223,455 - Itoh , et al. June 29, 1
1993-06-29
Vertical heat treatment apparatus
Grant 5,048,800 - Miyazaki , et al. September 17, 1
1991-09-17
Film forming method and film forming device
Grant 5,015,330 - Okumura , et al. May 14, 1
1991-05-14
Method for forming thin film of refractory material
Grant 4,746,549 - Ito , et al. May 24, 1
1988-05-24
Semiconductor device
Grant 4,699,801 - Ito , et al. October 13, 1
1987-10-13
Method of forming a thin film of a metal or metal compound on a substrate
Grant 4,650,698 - Moriya , et al. March 17, 1
1987-03-17
Method of forming a metal film on a selectively diffused layer
Grant 4,597,167 - Moriya , et al. July 1, 1
1986-07-01
Process for forming multi-layer interconnections
Grant 4,582,563 - Hazuki , et al. April 15, 1
1986-04-15
Method for producing semiconductor device
Grant 4,377,438 - Moriya , et al. March 22, 1
1983-03-22
Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode
Grant 4,283,439 - Higashinakagawa , et al. August 11, 1
1981-08-11
Method of making a semiconductor device
Grant 4,063,973 - Kirita , et al. December 20, 1
1977-12-20

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