Patent | Date |
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Crystal Film, Crystal Substrate, And Semiconductor Device App 20140235037 - Morita; Etsuo ;   et al. | 2014-08-21 |
Crystal film, crystal substrate, and semiconductor device Grant 8,741,451 - Morita , et al. June 3, 2 | 2014-06-03 |
Crystal firm, crystal substrate, and semiconductor device Grant 7,727,331 - Morita , et al. June 1, 2 | 2010-06-01 |
Crystal film, crystal substrate, and semiconductor device Grant 7,364,805 - Morita , et al. April 29, 2 | 2008-04-29 |
Crystal film, crystal substrate, and semiconductor device App 20080050599 - Morita; Etsuo ;   et al. | 2008-02-28 |
Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device Grant 7,294,201 - Morita November 13, 2 | 2007-11-13 |
Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device Grant 7,244,308 - Morita July 17, 2 | 2007-07-17 |
Crystal firm, crystal substrate, and semiconductor device App 20070125996 - Morita; Etsuo ;   et al. | 2007-06-07 |
Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate Grant 7,125,736 - Morita October 24, 2 | 2006-10-24 |
Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate Grant 7,033,854 - Morita April 25, 2 | 2006-04-25 |
Semiconductor light emitting device and fabrication method thereof Grant 6,967,353 - Suzuki , et al. November 22, 2 | 2005-11-22 |
Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate App 20050196888 - Morita, Etsuo | 2005-09-08 |
Method Of Manufacturing Crystal Of Iii-v Compounds Of The Nitride System, Crystal Substrate Of Iii-v Compounds Of The Nitride System, Crystal Film Of Iii-v Compounds Of The Nitride System, And Method Of Manufacturing Device Grant 6,727,523 - Morita April 27, 2 | 2004-04-27 |
Crystal film, crystal substrate, and semiconductor device App 20040067648 - Morita, Etsuo ;   et al. | 2004-04-08 |
Semiconductor light emitting device and fabrication method thereof App 20030180977 - Suzuki, June ;   et al. | 2003-09-25 |
Method of manufacturing crystal of III-V compounds of the nitride system, crystal substrate of III-V compounds of the nitride system, crystal film of III-V compounds of the nitride system, and method of manufacturing device App 20030073315 - Morita, Etsuo | 2003-04-17 |
Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure Grant 6,501,154 - Morita , et al. December 31, 2 | 2002-12-31 |
Method Of Manufacturing Crystal Of Iii-v Compounds Of The Nitride System, Crystal Substrate Of Iii-v Compounds Of The Nitride System, Crystal Film Of Iii-v Compounds Of The Nitride System, And Method Of Manufacturing Device Grant 6,498,048 - Morita December 24, 2 | 2002-12-24 |
Electrode, semiconductor device and methods for making them App 20020146856 - Morita, Etsuo | 2002-10-10 |
Electrode, Semiconductor Device And Methods For Making Them App 20020081800 - MORITA, ETSUO | 2002-06-27 |
Semiconductor Substrate And Semiconductor Device App 20010048114 - MORITA, ETSUO ;   et al. | 2001-12-06 |
Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device App 20010020440 - Morita, Etsuo | 2001-09-13 |
Semiconductor device and its manufacturing method App 20010010941 - Morita, Etsuo | 2001-08-02 |
Method of manufacturing crystal of III-V compounds of the nitride system, crystal substrate of III-V compounds of the nitride system, crystal film of III-V compounds of the nitride system, and method of manufacturing device App 20010004488 - Morita, Etsuo | 2001-06-21 |
Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device App 20010003019 - Morita, Etsuo | 2001-06-07 |
Semiconductor device on a sapphire substrate Grant 6,232,623 - Morita May 15, 2 | 2001-05-15 |
Semiconductor light emitting device Grant 6,121,636 - Morita , et al. September 19, 2 | 2000-09-19 |
Method for manufacture of cleaved light emitting semiconductor device Grant 6,107,162 - Morita , et al. August 22, 2 | 2000-08-22 |
A SOI substrate fabricating method Grant 5,705,421 - Matsushita , et al. January 6, 1 | 1998-01-06 |
Semiconductor light emitting device with defect decomposing and blocking layers Grant 5,665,977 - Ishibashi , et al. September 9, 1 | 1997-09-09 |