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Patent applications and USPTO patent grants for Morgenstern; Thomas.The latest application filed is for "method of forming an isolation layer and method of manufacturing a trench capacitor".
Patent | Date |
---|---|
Method of forming an isolation layer and method of manufacturing a trench capacitor Grant 6,984,556 - Drabe , et al. January 10, 2 | 2006-01-10 |
Method for manufacturing a trench capacitor having an isolation trench Grant 6,855,596 - Fichtl , et al. February 15, 2 | 2005-02-15 |
Etching processing method for a material layer Grant 6,852,639 - Rudolph , et al. February 8, 2 | 2005-02-08 |
Method of forming an isolation layer and method of manufacturing a trench capacitor App 20040198015 - Drabe, Christian ;   et al. | 2004-10-07 |
Method for manufacturing a trench capacitor having an isolation trench App 20040094777 - Fichtl, Gabriele ;   et al. | 2004-05-20 |
Processing method App 20040023507 - Rudolph, Matthias ;   et al. | 2004-02-05 |
Process for planarization and recess etching of integrated circuits App 20030022510 - Morgenstern, Thomas | 2003-01-30 |
Method for determining the endpoint of etch process steps App 20030010750 - Petrucci, Joseph Louis ;   et al. | 2003-01-16 |
Gate etch process for 12 inch wafers App 20020177323 - Grewal, Virinder ;   et al. | 2002-11-28 |
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