Patent | Date |
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Semiconductor device with selectively etched surface passivation Grant 10,825,924 - Green , et al. November 3, 2 | 2020-11-03 |
Semiconductor device with a recessed ohmic contact and methods of fabrication Grant 10,541,324 - Green , et al. Ja | 2020-01-21 |
Semiconductor device with selectively etched surface passivation Grant 10,522,670 - Green , et al. Dec | 2019-12-31 |
Semiconductor Device With Selectively Etched Surface Passivation App 20170317202 - Green; Bruce M. ;   et al. | 2017-11-02 |
Semiconductor device with selectively etched surface passivation Grant 9,799,760 - Green , et al. October 24, 2 | 2017-10-24 |
Semiconductor Devices With Integrated Schotky Diodes And Methods Of Fabrication App 20170294531 - Green; Bruce M. ;   et al. | 2017-10-12 |
Semiconductor Device With Selectively Etched Surface Passivation App 20170236929 - Green; Bruce M. ;   et al. | 2017-08-17 |
Semiconductor devices with integrated Schottky diodes and methods of fabrication Grant 9,685,345 - Green , et al. June 20, 2 | 2017-06-20 |
Method for improving E-beam lithography gate metal profile for enhanced field control Grant 9,281,204 - Moore , et al. March 8, 2 | 2016-03-08 |
High speed gallium nitride transistor devices Grant 9,276,101 - Green , et al. March 1, 2 | 2016-03-01 |
Semiconductor Device with Selectively Etched Surface Passivation App 20150357452 - Green; Bruce M. ;   et al. | 2015-12-10 |
Method for Improving E-Beam Lithography Gate Metal Profile for Enhanced Field Control App 20150311084 - Moore; Karen E. ;   et al. | 2015-10-29 |
High Speed Gallium Nitride Transistor Devices App 20150295075 - Green; Bruce M. ;   et al. | 2015-10-15 |
Semiconductor device with selectively etched surface passivation Grant 9,153,448 - Green , et al. October 6, 2 | 2015-10-06 |
Methods of making semiconductor devices with low leakage Schottky contacts Grant 9,123,645 - Green , et al. September 1, 2 | 2015-09-01 |
Semiconductor device with selectively etched surface passivation Grant 9,111,868 - Green , et al. August 18, 2 | 2015-08-18 |
High speed gallium nitride transistor devices Grant 9,099,433 - Green , et al. August 4, 2 | 2015-08-04 |
Semiconductor Devices With Integrated Schotky Diodes And Methods Of Fabrication App 20150137135 - GREEN; BRUCE M. ;   et al. | 2015-05-21 |
Semiconductor Device With Selectively Etched Surface Passivation App 20150132932 - Green; Bruce M. ;   et al. | 2015-05-14 |
Semiconductor device with selectively etched surface passivation Grant 8,946,776 - Green , et al. February 3, 2 | 2015-02-03 |
Methods Of Making Semiconductor Devices With Low Leakage Schotkycontacts App 20140087550 - GREEN; BRUCE M. ;   et al. | 2014-03-27 |
Semiconductor Device with Selectively Etched Surface Passivation App 20130341679 - Green; Bruce M. ;   et al. | 2013-12-26 |
Semiconductor Device with Selectively Etched Surface Passivation App 20130341678 - Green; Bruce M. ;   et al. | 2013-12-26 |
Semiconductor devices with low leakage Schottky contacts Grant 8,592,878 - Green , et al. November 26, 2 | 2013-11-26 |
High Speed Gallium Nitride Transistor Devices App 20130277680 - Green; Bruce M. ;   et al. | 2013-10-24 |
Dielectric Layer For Gallium Nitride Transistor App 20120156843 - Green; Bruce M. ;   et al. | 2012-06-21 |
Semiconductor Devices With Low Leakage Schottky Contacts App 20110156051 - Green; Bruce M. ;   et al. | 2011-06-30 |
Method for forming semiconductor devices with low leakage Schottky contacts Grant 7,935,620 - Green , et al. May 3, 2 | 2011-05-03 |
Low Leakage Schottky Contact Devices And Method App 20090146191 - Green; Bruce M. ;   et al. | 2009-06-11 |
Semiconductor device and method of making the same Grant 6,630,746 - Mancini , et al. October 7, 2 | 2003-10-07 |
Method of forming an alignment mark Grant 6,083,806 - Mancini , et al. July 4, 2 | 2000-07-04 |
Method of fabricating a semiconductor device with a thinned substrate Grant 5,933,750 - Wilson , et al. August 3, 1 | 1999-08-03 |
Silicon carbide transistor and method Grant 5,885,860 - Weitzel , et al. March 23, 1 | 1999-03-23 |
Method of forming a silicon carbide JFET Grant 5,641,695 - Moore , et al. June 24, 1 | 1997-06-24 |