loadpatents
name:-0.0089550018310547
name:-0.012997150421143
name:-0.001554012298584
Mooney; Patricia May Patent Filings

Mooney; Patricia May

Patent Applications and Registrations

Patent applications and USPTO patent grants for Mooney; Patricia May.The latest application filed is for "strained-silicon-on-insulator single-and double-gate mosfet and method for forming the same".

Company Profile
0.6.4
  • Mooney; Patricia May - Mount Kisco NY US
  • Mooney; Patricia May - Mt. Kisco NY
  • Mooney, Patricia May - Mountain Kisco NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same
Grant 8,409,974 - Cohen , et al. April 2, 2
2013-04-02
Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same
Grant 7,812,340 - Cohen , et al. October 12, 2
2010-10-12
Strained-silicon-on-insulator Single-and Double-gate Mosfet And Method For Forming The Same
App 20090309160 - Cohen; Guy Moshe ;   et al.
2009-12-17
High speed composite p-channel Si/SiGe heterostructure for field effect devices
Grant 7,084,431 - Chu , et al. August 1, 2
2006-08-01
High speed composite p-channel Si/SiGe heterostructure for field effect devices
Grant 6,858,502 - Chu , et al. February 22, 2
2005-02-22
Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same
App 20040253792 - Cohen, Guy Moshe ;   et al.
2004-12-16
High speed composite p-channel Si/SiGe heterostructure for field effect devices
App 20040227154 - Chu, Jack Oon ;   et al.
2004-11-18
High speed composite p-channel Si/SiGe heterostructure for field effect devices
App 20020125475 - Chu, Jack Oon ;   et al.
2002-09-12
High speed composite p-channel Si/SiGe heterostructure for field effect devices
Grant 6,350,993 - Chu , et al. February 26, 2
2002-02-26

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