Mooney; Patricia M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Mooney; Patricia M..The latest application filed is for "in-place bonding of microstructures".

Company Profile

0.13.13

Mooney; Patricia M. - Mount Kisco NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels Grant 7,723,791 - Zhu , et al. May 25, 2	2010-05-25
In-place bonding of microstructures Grant 7,709,352 - Cohen , et al. May 4, 2	2010-05-04
In-place Bonding Of Microstructures App 20090035919 - Cohen; Guy Moshe ; et al.	2009-02-05
Structure And Method For Manufacturing Strained Silicon Directly-on-insulator Substrate With Hybrid Crystalline Orientation And Different Stress Levels App 20080296634 - Zhu; Huilong ; et al.	2008-12-04
In-place bonding of microstructures Grant 7,456,081 - Cohen , et al. November 25, 2	2008-11-25
HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS App 20080251813 - Boyd; Diane C. ; et al.	2008-10-16
Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels Grant 7,423,303 - Zhu , et al. September 9, 2	2008-09-09
Hetero-integrated strained silicon n- and p-MOSFETs Grant 7,396,747 - Boyd , et al. July 8, 2	2008-07-08
HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS App 20070278517 - Boyd; Diane C. ; et al.	2007-12-06
Structure And Method For Manufacturing Strained Silicon Directly-on-insulator Substrate With Hybrid Crystalline Orientation And Different Stress Levels App 20070262361 - Zhu; Huilong ; et al.	2007-11-15
Hetero-integrated strained silicon n- and p-MOSFETs Grant 7,273,800 - Boyd , et al. September 25, 2	2007-09-25
Method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels Grant 7,271,043 - Zhu , et al. September 18, 2	2007-09-18
In-place Bonding Of Microstructures App 20070212851 - Cohen; Guy Moshe ; et al.	2007-09-13
In-place bonding of microstructures Grant 7,238,589 - Cohen , et al. July 3, 2	2007-07-03
Structure and method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels App 20060157706 - Zhu; Huilong ; et al.	2006-07-20
Hetero-integrated strained silicon n-and p-MOSFETs App 20060091377 - Boyd; Diane C. ; et al.	2006-05-04
In-place bonding of microstructures App 20060094175 - Cohen; Guy Moshe ; et al.	2006-05-04
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing Grant 6,855,649 - Christiansen , et al. February 15, 2	2005-02-15
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same Grant 6,833,332 - Christiansen , et al. December 21, 2	2004-12-21
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing Grant 6,709,903 - Christiansen , et al. March 23, 2	2004-03-23
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing App 20030218189 - Christiansen, Silke H. ; et al.	2003-11-27
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing App 20030201468 - Christiansen, Silke H. ; et al.	2003-10-30
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing Grant 6,593,625 - Christiansen , et al. July 15, 2	2003-07-15
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same App 20030127646 - Christiansen, Silke H. ; et al.	2003-07-10
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same Grant 6,515,335 - Christiansen , et al. February 4, 2	2003-02-04
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing App 20020185686 - Christiansen, Silke H. ; et al.	2002-12-12

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