Montgomery; Clint

Patent Applications and Registrations

Patent applications and USPTO patent grants for Montgomery; Clint.The latest application filed is for "capacitor formed on a recrystallized polysilicon layer".

Company Profile

0.5.7

Montgomery; Clint - Coppell TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Capacitor formed on a recrystallized polysilicon layer Grant 8,053,296 - Lu , et al. November 8, 2	2011-11-08
Methods for full gate silicidation of metal gate structures Grant 7,863,192 - Frank , et al. January 4, 2	2011-01-04
Capacitor Formed On A Recrystallized Polysilicon Layer App 20100159665 - Lu; Jiong-Ping ; et al.	2010-06-24
Methods For Full Gate Silicidation Of Metal Gate Structures App 20090170258 - Frank; Aaron ; et al.	2009-07-02
Process method to facilitate silicidation Grant 7,448,395 - Lu , et al. November 11, 2	2008-11-11
Method for manufacturing a semiconductor device having silicided regions Grant 7,422,968 - Lu , et al. September 9, 2	2008-09-09
Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor App 20070063294 - Bu; Haowen ; et al.	2007-03-22
Semiconductor device having a fully silicided gate electrode and method of manufacture therefor Grant 7,148,143 - Bu , et al. December 12, 2	2006-12-12
Method for manufacturing a semiconductor device having silicided regions App 20060024882 - Lu; Jiong-Ping ; et al.	2006-02-02
Process method to facilitate silicidation App 20060014393 - Lu; Jiong-Ping ; et al.	2006-01-19
Semiconductor device having a fully silicided gate electrode and method of manufacture therefor App 20050215055 - Bu, Haowen ; et al.	2005-09-29
Capacitor formed on a recrystallized polysilicon layer and a method of manufacture therefor App 20050110114 - Lu, Jiong-Ping ; et al.	2005-05-26

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