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Methods of fabrication employing nanoscale mandrels
Grant 7,553,730 - Barth , et al. June 30, 2 | 2009-06-30 |
Methods Of Fabrication Employing Nanoscale Mandrels
App 20090142472 - Barth; Phillip W. ; et al. | 2009-06-04 |
System and method for controlling the size and/or distribution of catalyst nanoparticles for nanostructure growth
App 20080032238 - Lu; Jennifer Q. ; et al. | 2008-02-07 |
lll-phosphide light emitting devices with thin active layers
Grant 7,087,941 - Gardner , et al. August 8, 2 | 2006-08-08 |
Nanostructures and methods of making the same
Grant 7,052,618 - Moll , et al. May 30, 2 | 2006-05-30 |
Field effect transistor having a carrier exclusion layer
App 20060102931 - Kopley; Thomas Edward ; et al. | 2006-05-18 |
System and method for growing nanostructures from a periphery of a catalyst layer
App 20060084570 - Kopley; Thomas E. ; et al. | 2006-04-20 |
System and method for controlling nanostructure growth
App 20060060863 - Lu; Jennifer ; et al. | 2006-03-23 |
Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability
Grant 6,992,337 - Bahl , et al. January 31, 2 | 2006-01-31 |
Gallium arsenide antimonide (GaAsSb)/Indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability
App 20050218428 - Bahl, Sandeep ; et al. | 2005-10-06 |
System and method for planarizing a substrate surface having a non-planar surface topography
Grant 6,949,008 - Moll , et al. September 27, 2 | 2005-09-27 |
Nanostructures and methods of making the same
App 20050164132 - Moll, Nicolas J. ; et al. | 2005-07-28 |
Heterojunction semiconductor device having an intermediate layer for providing an improved junction
Grant 6,822,274 - Yi , et al. November 23, 2 | 2004-11-23 |
Heterojunction semiconductor device having an intermediate layer for providing an improved junction
App 20040149994 - Yi, Sung Soo ; et al. | 2004-08-05 |
Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure
Grant 6,768,141 - Bahl , et al. July 27, 2 | 2004-07-27 |
Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain
Grant 6,762,480 - Moll , et al. July 13, 2 | 2004-07-13 |
Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain
App 20040104403 - Moll, Nicolas J. ; et al. | 2004-06-03 |
Heterojunction bipolar transistor(HBT) having improved emitter-base grading structure
App 20040036082 - Bahl, Sandeep R. ; et al. | 2004-02-26 |
Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
Grant 6,696,710 - Moll , et al. February 24, 2 | 2004-02-24 |
Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improve gain
App 20020145137 - Moll, Nicolas J. ; et al. | 2002-10-10 |
AIGaInP light emitting devices with thin active layers
App 20020127751 - Gardner, Nathan F. ; et al. | 2002-09-12 |
Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
App 20020117657 - Moll, Nicolas J. ; et al. | 2002-08-29 |
Algainp Light Emitting Devices With Thin Active Layers
App 20010020703 - GARDNER, NATHAN F. ; et al. | 2001-09-13 |
Sintered gate schottky barrier fet passivated by a degradation-stop layer
Grant 6,258,639 - Rohdin , et al. July 10, 2 | 2001-07-10 |
Heterostructure transistor using real-space electron transfer
Grant 5,055,891 - Moll , et al. October 8, 1 | 1991-10-08 |
Method And System For Acousto-electric Scanning
Grant 3,826,866 - Quate , et al. July 30, 1 | 1974-07-30 |
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