Mohapatra; Chandra S.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Mohapatra; Chandra S..The latest application filed is for "field effect transistors with gate electrode self-aligned to semiconductor fin".

Company Profile

54.46.57

Mohapatra; Chandra S. - Hillsboro OR
Mohapatra; Chandra S. - Beaverton OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Backside source/drain replacement for semiconductor devices with metallization on both sides Grant 11,444,166 - Glass , et al. September 13, 2	2022-09-13
High-mobility semiconductor source/drain spacer Grant 11,417,655 - Dewey , et al. August 16, 2	2022-08-16
Field Effect Transistors With Gate Electrode Self-aligned To Semiconductor Fin App 20220181442 - Ma; Sean T. ; et al.	2022-06-09
Field effect transistors with gate electrode self-aligned to semiconductor fin Grant 11,276,755 - Ma , et al. March 15, 2	2022-03-15
Optimizing gate profile for performance and gate fill Grant 11,205,707 - Rahhal-Orabi , et al. December 21, 2	2021-12-21
Finfet Transistor Having A Doped Subfin Structure To Reduce Channel To Substrate Leakage App 20210296180 - DEWEY; Gilbert ; et al.	2021-09-23
FINFET transistor having a doped subfin structure to reduce channel to substrate leakage Grant 11,107,890 - Dewey , et al. August 31, 2	2021-08-31
Etching fin core to provide fin doubling Grant 11,024,737 - Mohapatra , et al. June 1, 2	2021-06-01
High-mobility field effect transistors with wide bandgap fin cladding Grant 10,957,769 - Ma , et al. March 23, 2	2021-03-23
Backside Source/drain Replacement For Semiconductor Devices With Metallization On Both Sides App 20210074823 - Glass; Glenn A. ; et al.	2021-03-11
Geometry tuning of fin based transistor Grant 10,944,006 - Glass , et al. March 9, 2	2021-03-09
Semiconductor device with released source and drain Grant 10,903,364 - Rachmady , et al. January 26, 2	2021-01-26
Backside source/drain replacement for semiconductor devices with metallization on both sides Grant 10,892,337 - Glass , et al. January 12, 2	2021-01-12
Group III-V material transistors employing nitride-based dopant diffusion barrier layer Grant 10,886,408 - Mohapatra , et al. January 5, 2	2021-01-05
Indium-rich NMOS transistor channels Grant 10,818,793 - Mohapatra , et al. October 27, 2	2020-10-27
Field Effect Transistors With Gate Electrode Self-aligned To Semiconductor Fin App 20200321435 - Ma; Sean T. ; et al.	2020-10-08
High-mobility Field Effect Transistors With Wide Bandgap Fin Cladding App 20200321439 - Ma; Sean T. ; et al.	2020-10-08
Differential work function between gate stack metals to reduce parasitic capacitance Grant 10,797,150 - Ma , et al. October 6, 2	2020-10-06
Nanowire For Transistor Integration App 20200303499 - GLASS; Glenn A. ; et al.	2020-09-24
Beaded fin transistor Grant 10,770,593 - Dewey , et al. Sep	2020-09-08
Fin-based III-V/SI or GE CMOS SAGE integration Grant 10,748,900 - Rachmady , et al. A	2020-08-18
Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers Grant 10,749,032 - Mohapatra , et al. A	2020-08-18
Backside contact resistance reduction for semiconductor devices with metallization on both sides Grant 10,734,412 - Glass , et al.	2020-08-04
Pseudomorphic InGaAs on GaAs for gate-all-around transistors Grant 10,651,288 - Mohapatra , et al.	2020-05-12
III-V finfet transistor with V-groove S/D profile for improved access resistance Grant 10,644,137 - Rachmady , et al.	2020-05-05
FINFET transistor having a tapered subfin structure Grant 10,636,912 - Dewey , et al.	2020-04-28
Apparatus and methods to create an active channel having indium rich side and bottom surfaces Grant 10,586,848 - Mohapatra , et al.	2020-03-10
Transistor with a sub-fin dielectric region under a gate Grant 10,580,865 - Rachmady , et al.	2020-03-03
An Indium-containing Fin Of A Transistor Device With An Indium-rich Core App 20200066855 - MOHAPATRA; Chandra S. ; et al.	2020-02-27
Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors Grant 10,559,683 - Mohapatra , et al. Feb	2020-02-11
Crystallized silicon carbon replacement material for NMOS source/drain regions Grant 10,559,689 - Jambunathan , et al. Feb	2020-02-11
Low damage self-aligned amphoteric FINFET tip doping Grant 10,546,858 - Kavalieros , et al. Ja	2020-01-28
Dopant diffusion barrier for source/drain to curb dopant atom diffusion Grant 10,529,808 - Mohapatra , et al. J	2020-01-07
Reduced leakage transistors with germanium-rich channel regions Grant 10,516,021 - Glass , et al. Dec	2019-12-24
III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same Grant 10,497,814 - Kennel , et al. De	2019-12-03
Transistor including tensile-strained germanium channel Grant 10,483,353 - Mohapatra , et al. Nov	2019-11-19
A Finfet Transistor Having A Tapered Subfin Structure App 20190341481 - DEWEY; Gilbert ; et al.	2019-11-07
Well-based integration of heteroepitaxial N-type transistors with P-type transistors Grant 10,461,082 - Rachmady , et al. Oc	2019-10-29
Apparatus and methods to create a buffer which extends into a gated region of a transistor Grant 10,461,193 - Mohapatra , et al. Oc	2019-10-29
High-electron-mobility transistors with heterojunction dopant diffusion barrier Grant 10,446,685 - Mohapatra , et al. Oc	2019-10-15
High electron mobility transistors with localized sub-fin isolation Grant 10,431,690 - Rachmady , et al. O	2019-10-01
Techniques for forming transistors on the same die with varied channel materials Grant 10,418,464 - Glass , et al. Sept	2019-09-17
High mobility field effect transistors with a band-offset semiconductor source/drain spacer Grant 10,411,007 - Dewey , et al. Sept	2019-09-10
Prevention of subchannel leakage current in a semiconductor device with a fin structure Grant 10,403,752 - Jambunathan , et al. Sep	2019-09-03
High-electron-mobility transistors with counter-doped dopant diffusion barrier Grant 10,388,764 - Mohapatra , et al. A	2019-08-20
Transistor fin formation via cladding on sacrificial core Grant 10,373,977 - Glass , et al.	2019-08-06
Backside Source/drain Replacement For Semiconductor Devices With Metallization On Both Sides App 20190221649 - Glass; Glenn A. ; et al.	2019-07-18
High mobility field effect transistors with a retrograded semiconductor source/drain Grant 10,340,374 - Dewey , et al.	2019-07-02
Group Iii-v Material Transistors Employing Nitride-based Dopant Diffusion Barrier Layer App 20190198658 - Mohapatra; Chandra S. ; et al.	2019-06-27
Indium-rich Nmos Transistor Channels App 20190189794 - MOHAPATRA; CHANDRA S. ; et al.	2019-06-20
Semiconductor Device With Released Source And Drain App 20190172941 - RACHMADY; Willy ; et al.	2019-06-06
Backside Contact Resistance Reduction For Semiconductor Devices With Metallization On Both Sides App 20190157310 - GLASS; GLENN A. ; et al.	2019-05-23
High-mobility Semiconductor Source/drain Spacer App 20190148378 - DEWEY; Gilbert ; et al.	2019-05-16
Iii-v Finfet Transistor With V-groove S/d Profile For Improved Access Resistance App 20190148512 - RACHMADY; Willy ; et al.	2019-05-16
Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces Grant 10,290,709 - Glass , et al.	2019-05-14
A Finfet Transistor Having A Doped Subfin Structure To Reduce Channel To Substrate Leakage App 20190140054 - DEWEY; Gilbert ; et al.	2019-05-09
Beaded Fin Transistor App 20190097055 - DEWEY; GILBERT ; et al.	2019-03-28
Carrier confinement for high mobility channel devices Grant 10,243,078 - Dewey , et al.	2019-03-26
Indium-rich NMOS transistor channels Grant 10,229,997 - Mohapatra , et al.	2019-03-12
High-mobility semiconductor source/drain spacer Grant 10,211,208 - Dewey , et al. Feb	2019-02-19
Techniques For Forming Transistors Including Group Iii-v Material Nanowires Using Sacrificial Group Iv Material Layers App 20190043993 - MOHAPATRA; CHANDRA S. ; et al.	2019-02-07
Etching Fin Core To Provide Fin Doubling App 20190035926 - MOHAPATRA; Chandra S. ; et al.	2019-01-31
Apparatus And Methods To Create An Active Channel Having Indium Rich Side And Bottom Surfaces App 20190035889 - Mohapatra; Chandra S. ; et al.	2019-01-31
Dopant Diffusion Barrier For Source/drain To Curb Dopant Atom Diffusion App 20190035897 - MOHAPATRA; Chandra S. ; et al.	2019-01-31
Geometry Tuning Of Fin Based Transistor App 20190019891 - GLASS; Glenn A. ; et al.	2019-01-17
Crystallized Silicon Carbon Replacement Material For Nmos Source/drain Regions App 20180374951 - JAMBUNATHAN; KARTHIK ; et al.	2018-12-27
Transistor Including Tensile-strained Germanium Channel App 20180358440 - MOHAPATRA; CHANDRA S. ; et al.	2018-12-13
High Mobility Field Effect Transistors With A Band-offset Semiconductor Source/drain Spacer App 20180350798 - Dewey; Gilbert ; et al.	2018-12-06
Transistor With A Sub-fin Dielectric Region Under A Gate App 20180337235 - RACHMADY; WILLY ; et al.	2018-11-22
Reduced Leakage Transistors With Germanium-rich Channel Regions App 20180331184 - GLASS; GLENN A. ; et al.	2018-11-15
Iii-v Semiconductor Alloys For Use In The Subfin Of Non-planar Semiconductor Devices And Methods Of Forming The Same App 20180323310 - KENNEL; HAROLD W. ; et al.	2018-11-08
Differential Work Function Between Gate Stack Metals To Reduce Parasitic Capacitance App 20180315827 - MA; Sean T. ; et al.	2018-11-01
Fin-based Iii-v/si Or Ge Cmos Sage Integration App 20180315757 - RACHMADY; Willy ; et al.	2018-11-01
High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin Grant 10,084,043 - Dewey , et al. September 25, 2	2018-09-25
High Mobility Field Effect Transistors With A Retrograded Semiconductor Source/drain App 20180261694 - Dewey; Gilbert ; et al.	2018-09-13
High-electron-mobility Transistors With Counter-doped Dopant Diffusion Barrier App 20180254332 - Mohapatra; Chandra S. ; et al.	2018-09-06
High-electron-mobility Transistors With Heterojunction Dopant Diffusion Barrier App 20180248028 - Mohapatra; Chandra S. ; et al.	2018-08-30
Low Damage Self-aligned Amphoteric Finfet Tip Doping App 20180226405 - Kavalieros; Jack T. ; et al.	2018-08-09
Pseudomorphic Ingaas On Gaas For Gate-all-around Transistors App 20180158927 - MOHAPATRA; Chandra S. ; et al.	2018-06-07
High Electron Mobility Transistors With Localized Sub-fin Isolation App 20180158957 - RACHMADY; Willy ; et al.	2018-06-07
Transistor Fin Formation Via Cladding On Sacrifical Core App 20180158841 - GLASS; GLENN A. ; et al.	2018-06-07
Apparatus And Methods To Create A Buffer Which Extends Into A Gated Region Of A Transistor App 20180158958 - Mohapatra; Chandra S. ; et al.	2018-06-07
Indium-rich Nmos Transistor Channels App 20180158944 - MOHAPATRA; CHANDRA S. ; et al.	2018-06-07
High-mobility Semiconductor Source/drain Spacer App 20180145077 - DEWEY; Gilbert ; et al.	2018-05-24
Well-based Integration Of Heteroepitaxial N-type Transistors With P-type Transistors App 20180130801 - Rachmady; Willy ; et al.	2018-05-10
Techniques For Forming Transistors On The Same Die With Varied Channel Materials App 20180108750 - GLASS; GLENN A. ; et al.	2018-04-19
Apparatus and methods of forming fin structures with asymmetric profile Grant 9,929,273 - Rachmady , et al. March 27, 2	2018-03-27
Apparatus And Methods Of Forming Fin Structures With Asymmetric Profile App 20180013000 - Rachmady; Willy ; et al.	2018-01-11
High Mobility Nanowire Fin Channel On Silicon Substrate Formed Using Sacrificial Sub-fin App 20170358645 - DEWEY; GILBERT ; et al.	2017-12-14
Tensile source drain III-V transistors for mobility improved n-MOS Grant 9,842,928 - Glass , et al. December 12, 2	2017-12-12
Diffusion Tolerant Iii-v Semiconductor Heterostructures And Devices Including The Same App 20170345900 - KENNEL; HAROLD W. ; et al.	2017-11-30
Optimizing Gate Profile For Performance And Gate Fill App 20170330955 - RAHHAL-ORABI; NADIA M. ; et al.	2017-11-16
Prevention Of Subchannel Leakage Current App 20170330966 - JAMBUNATHAN; KARTHIK ; et al.	2017-11-16
Thin Channel Region On Wide Subfin App 20170323963 - GARDNER; Sanaz K. ; et al.	2017-11-09
Apparatus And Methods Of Forming Fin Structures With Sidewall Liner App 20170323955 - Rachmady; Willy ; et al.	2017-11-09
Carrier Confinement For High Mobility Channel Devices App 20170323962 - DEWEY; GILBERT ; et al.	2017-11-09
Uniform Layers Formed with Aspect Ratio Trench Based Processes App 20170317187 - GARDNER; Sanaz K. ; et al.	2017-11-02
Apparatus And Methods To Create A Buffer To Reduce Leakage In Microelectronic Transistors App 20170278964 - Mohapatra; Chandra S. ; et al.	2017-09-28
Apparatus And Methods To Create A Doped Sub-structure To Reduce Leakage In Microelectronic Transistors App 20170278944 - Mohapatra; Chandra S. ; et al.	2017-09-28
Ingaas Epi Structure And Wet Etch Process For Enabling Iii-v Gaa In Art Trench App 20170263706 - GARDNER; Sanaz K. ; et al.	2017-09-14
Apparatus And Methods To Create An Indium Gallium Arsenide Active Channel Having Indium Rich Surfaces App 20170229543 - Glass; Glenn A. ; et al.	2017-08-10
Tensile Source Drain Iii-v Transistors For Mobility Improved N-mos App 20160293760 - Glass; Glenn A. ; et al.	2016-10-06

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