Mochizuki; Tae

Patent Applications and Registrations

Patent applications and USPTO patent grants for Mochizuki; Tae.The latest application filed is for "self-standing gan substrate, gan crystal, method for producing gan single crystal, and method for producing semiconductor device".

Company Profile

8.9.13

Mochizuki; Tae - Tokyo JP
MOCHIZUKI; Tae - Ushiku-shi JP
Mochizuki; Tae - Ushiku JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for growing GaN crystal and c-plane GaN substrate Grant 11,404,268 - Mikawa , et al. August 2, 2	2022-08-02
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE App 20210273058 - NAGAO; Satoru ; et al.	2021-09-02
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL App 20210230770 - FUJISAWA; Hideo ; et al.	2021-07-29
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device Grant 11,038,024 - Nagao , et al. June 15, 2	2021-06-15
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device Grant 11,031,475 - Nagao , et al. June 8, 2	2021-06-08
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD App 20210164127 - ISO; Kenji ; et al.	2021-06-03
GaN single crystal and method for manufacturing GaN single crystal Grant 11,001,940 - Fujisawa , et al. May 11, 2	2021-05-11
CONDUCTIVE C-PLANE GaN SUBSTRATE App 20210090886 - Mikawa; Yutaka ; et al.	2021-03-25
Conductive C-plane GaN substrate Grant 10,903,072 - Mikawa , et al. January 26, 2	2021-01-26
Conductive C-plane Gan Substrate App 20200350163 - MIKAWA; Yutaka ; et al.	2020-11-05
Conductive C-plane GaN substrate Grant 10,796,904 - Mikawa , et al. October 6, 2	2020-10-06
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE App 20200303187 - MIKAWA; Yutaka ; et al.	2020-09-24
Method for growing GaN crystal and C-plane GaN substrate Grant 10,720,326 - Mikawa , et al.	2020-07-21
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE App 20200013860 - NAGAO; Satoru ; et al.	2020-01-09
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device Grant 10,475,887 - Nagao , et al. Nov	2019-11-12
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE App 20190312111 - NAGAO; Satoru ; et al.	2019-10-10
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE App 20190189439 - MIKAWA; Yutaka ; et al.	2019-06-20
CONDUCTIVE C-PLANE GaN SUBSTRATE App 20190189438 - MIKAWA; Yutaka ; et al.	2019-06-20
GaN single crystal and method for manufacturing GaN single crystal Grant 10,301,743 - Fujisawa , et al.	2019-05-28
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL App 20190127881 - FUJISAWA; Hideo ; et al.	2019-05-02
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL App 20170327971 - FUJISAWA; Hideo ; et al.	2017-11-16
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE App 20160233306 - NAGAO; Satoru ; et al.	2016-08-11

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