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Patent applications and USPTO patent grants for Mo; Hongxiang.The latest application filed is for "nitride layer protection between pfet source/drain regions and dummy gate during source/drain etch".
Patent | Date |
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Nitride layer protection between PFET source/drain regions and dummy gate during source/drain etch Grant 9,419,139 - Wu , et al. August 16, 2 | 2016-08-16 |
Nitride Layer Protection Between Pfet Source/drain Regions And Dummy Gate During Source/drain Etch App 20160163859 - WU; Xusheng ;   et al. | 2016-06-09 |
Systems And Methods For Fabricating Gate Structures For Semiconductor Devices App 20140357073 - MO; Hongxiang ;   et al. | 2014-12-04 |
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