MIZUGUCHI; Tetsuya

Patent Applications and Registrations

Patent applications and USPTO patent grants for MIZUGUCHI; Tetsuya.The latest application filed is for "storage device and storage unit".

Company Profile

0.55.47

MIZUGUCHI; Tetsuya - Kanagawa JP
MIZUGUCHI; Tetsuya - Mountain View CA
Mizuguchi; Tetsuya - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Storage Device And Storage Unit App 20220293855 - MIZUGUCHI; Tetsuya ; et al.	2022-09-15
Human Body Support Device App 20220134049 - SAKUMA; Sayako ; et al.	2022-05-05
Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same Grant 9,577,187 - Maesaka , et al. February 21, 2	2017-02-21
Memory component, memory device, and method of operating memory device Grant 9,543,514 - Ohba , et al. January 10, 2	2017-01-10
Sound synthesis method and sound synthesis apparatus Grant 9,489,938 - Mizuguchi , et al. November 8, 2	2016-11-08
Method of making memory element with ion source layer comprised of two or more unit IO source layers Grant 9,356,232 - Ohba , et al. May 31, 2	2016-05-31
Memory Component, Memory Device, And Method Of Operating Memory Device App 20160079528 - Ohba; Kazuhiro ; et al.	2016-03-17
Memory component, memory device, and method of operating memory device Grant 9,240,549 - Ohba , et al. January 19, 2	2016-01-19
Memory element and memory device Grant 9,231,200 - Mizuguchi , et al. January 5, 2	2016-01-05
Memory element and memory device with ion source layer and resistance change layer Grant 9,202,560 - Mizuguchi , et al. December 1, 2	2015-12-01
Memory Element With Ion Conductor Layer In Which Metal Ions Diffuse And Memory Device Incorporating Same App 20150333256 - Maesaka; Akihiro ; et al.	2015-11-19
Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same Grant 9,136,470 - Maesaka , et al. September 15, 2	2015-09-15
Memory element and method of manufacturing the same, and memory device Grant 9,112,149 - Sei , et al. August 18, 2	2015-08-18
Memory element having ion source layers with different contents of a chalcogen element Grant 9,058,873 - Shimuta , et al. June 16, 2	2015-06-16
Memory Element With Ion Source Layer And Memory Device App 20150072499 - Ohba; Kazuhiro ; et al.	2015-03-12
Memory Element And Memory Device App 20140376301 - Mizuguchi; Tetsuya ; et al.	2014-12-25
Memory element with ion source layer and memory device Grant 8,912,516 - Ohba , et al. December 16, 2	2014-12-16
Memory element and memory device Grant 8,885,385 - Mizuguchi , et al. November 11, 2	2014-11-11
Memory element and memory device Grant 8,873,281 - Mizuguchi , et al. October 28, 2	2014-10-28
Memory element and memory device Grant 8,816,313 - Ohba , et al. August 26, 2	2014-08-26
Memory element and memory device Grant 8,796,657 - Yasuda , et al. August 5, 2	2014-08-05
Memory Component, Memory Device, And Method Of Operating Memory Device App 20140183438 - Ohba; Kazuhiro ; et al.	2014-07-03
Memory component, memory device, and method of operating memory device Grant 8,730,709 - Ohba , et al. May 20, 2	2014-05-20
Method of manufacturing a semiconductor memory device having a resistance change memory layer Grant 8,685,786 - Kagawa , et al. April 1, 2	2014-04-01
Memory Element And Memory Device App 20140008600 - Mizuguchi; Tetsuya ; et al.	2014-01-09
Sound Synthesis Method And Sound Synthesis Apparatus App 20140006031 - MIZUGUCHI; Tetsuya ; et al.	2014-01-02
Semiconductor Memory Device And A Method Of Manufacturing The Same App 20130256626 - KAGAWA; Yoshihisa ; et al.	2013-10-03
Memory element and memory device Grant 8,547,735 - Mizuguchi , et al. October 1, 2	2013-10-01
Memory Component, Memory Device, And Method Of Operating Memory Device App 20130240818 - OHBA; KAZUHIRO ; et al.	2013-09-19
Memory element and memory device Grant 8,492,740 - Ohba , et al. July 23, 2	2013-07-23
Memory component, memory device, and method of operating memory device Grant 8,427,860 - Ohba , et al. April 23, 2	2013-04-23
Memory Element, Method Of Manufacturing The Same, And Memory Device App 20130001496 - Shimuta; Masayuki ; et al.	2013-01-03
Memory Element, Method Of Manufacturing The Same, And Memory Device App 20130001497 - Ohba; Kazuhiro ; et al.	2013-01-03
Memory Element And Memory Device App 20120314479 - Mizuguchi; Tetsuya ; et al.	2012-12-13
Memory Element And Memory Device App 20120294063 - Mizuguchi; Tetsuya ; et al.	2012-11-22
Memory cell Grant 8,295,074 - Yasuda , et al. October 23, 2	2012-10-23
Memory Element And Memory Device App 20120218808 - Yasuda; Shuichiro ; et al.	2012-08-30
Memory Component, Memory Device, And Method Of Operating Memory Device App 20110194329 - Ohba; Kazuhiro ; et al.	2011-08-11
Memory Element And Memory Device App 20110155988 - Ohba; Kazuhiro ; et al.	2011-06-30
Memory Element And Memory Device App 20110155987 - Mizuguchi; Tetsuya ; et al.	2011-06-30
Memory Element And Memory Device App 20110140065 - Maesaka; Akihiro ; et al.	2011-06-16
Semiconductor Memory Device And A Method Of Manufacturing The Same App 20110031466 - KAGAWA; Yoshihisa ; et al.	2011-02-10
Memory Cell App 20100259967 - Yasuda; Shuichiro ; et al.	2010-10-14
Memory element and memory device comprising memory layer positioned between first and second electrodes Grant 7,786,459 - Aratani , et al. August 31, 2	2010-08-31
Game apparatus and method for falling block game with launched rising objects Grant 7,775,866 - Mizuguchi , et al. August 17, 2	2010-08-17
Memory Element And Memory Device App 20100195371 - Ohba; Kazuhiro ; et al.	2010-08-05
Magnetoresistive effect element and magnetic memory device Grant 7,700,982 - Hosomi , et al. April 20, 2	2010-04-20
Memory element and memory device Grant 7,696,511 - Ohba , et al. April 13, 2	2010-04-13
Memory device comprising a memory layer and a metal chalcogenide ion-source layer Grant 7,675,053 - Mizuguchi , et al. March 9, 2	2010-03-09
Memory Element And Memory Device App 20090039337 - Ohba; Kazuhiro ; et al.	2009-02-12
Magnetoresistive Effect Element And Magnetic Memory Device App 20080006860 - Hosomi; Masanori ; et al.	2008-01-10
Magnetoresistive effect element and magnetic memory device Grant 7,315,053 - Hosomi , et al. January 1, 2	2008-01-01
Memory element and memory device Grant 7,307,270 - Aratani , et al. December 11, 2	2007-12-11
Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof Grant 7,262,064 - Ohba , et al. August 28, 2	2007-08-28
Magnetoresistive-effect element having a prominent magnetoresistive effect, and method of manufacturing same Grant 7,206,173 - Mizuguchi April 17, 2	2007-04-17
Magnetoresistive element, method for making the same, and magnetic memory device incorporating the same Grant 7,173,300 - Mizuguchi , et al. February 6, 2	2007-02-06
Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head Grant 7,099,124 - Mizuguchi August 29, 2	2006-08-29
Memory element and memory device App 20060189084 - Mizuguchi; Tetsuya ; et al.	2006-08-24
Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device App 20060187703 - Mizuguchi; Tetsuya ; et al.	2006-08-24
Magnetoresistant device and magnetic memory device further comments App 20060125034 - Ohba; Kazuhiro ; et al.	2006-06-15
Memory element and memory device App 20060126423 - Aratani; Katsuhisa ; et al.	2006-06-15
Memory element and memory device App 20060104106 - Aratani; Katsuhisa ; et al.	2006-05-18
Magnetoresistive effect element and magnetic memory device Grant 7,034,348 - Ohba , et al. April 25, 2	2006-04-25
Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device Grant 7,026,671 - Mizuguchi , et al. April 11, 2	2006-04-11
Magnetoresistive effect element and magnetic memory device Grant 6,999,288 - Sone , et al. February 14, 2	2006-02-14
Magnetoresistive effect element and magnetic memory device Grant 6,992,868 - Sone , et al. January 31, 2	2006-01-31
Magnetoresistive element and magnetic memory unit Grant 6,990,014 - Hosomi , et al. January 24, 2	2006-01-24
Game apparatus and control method therefor App 20050277456 - Mizuguchi, Tetsuya ; et al.	2005-12-15
Magnetic memory device Grant 6,967,386 - Mizuguchi November 22, 2	2005-11-22
Magnetoresistive effect element and magnetic memory device App 20050162904 - Sone, Takeyuki ; et al.	2005-07-28
Magnetoresistive effect element and magnetic memory device App 20050162905 - Sone, Takeyuki ; et al.	2005-07-28
Magnetoresistive element and magnetic memory unit App 20050157542 - Hosomi, Masanori ; et al.	2005-07-21
Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head App 20050105221 - Mizuguchi, Tetsuya	2005-05-19
Magnetoresistive device and magnetic memory device Grant 6,879,473 - Sone , et al. April 12, 2	2005-04-12
Magnetic memory device App 20050029562 - Mizuguchi, Tetsuya	2005-02-10
Magnetoresistive effect element and magnetic memory device App 20040262654 - Ohba, Kazuhiro ; et al.	2004-12-30
Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof App 20040257719 - Ohba, Kazuhiro ; et al.	2004-12-23
Magnetoresistive effect element and magnetic memory device Grant 6,831,314 - Higo , et al. December 14, 2	2004-12-14
Magnetoresistive effect element and magnetic memory device App 20040245553 - Hosomi, Masanori ; et al.	2004-12-09
Magnetoresistive device and magnetic memory device App 20040246788 - Sone, Takeyuki ; et al.	2004-12-09
Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device Grant 6,815,745 - Higo , et al. November 9, 2	2004-11-09
Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head Grant 6,765,769 - Mizuguchi July 20, 2	2004-07-20
Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device App 20040042129 - Mizuguchi, Tetsuya ; et al.	2004-03-04
Magnetoresistive effect element and magnetic memory device App 20040001372 - Higo, Yutaka ; et al.	2004-01-01
Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device App 20030227799 - Higo, Yutaka ; et al.	2003-12-11
Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity Grant 6,621,666 - Miyauchi , et al. September 16, 2	2003-09-16
Magnetoresistive element, method for making the same, and magnetic memory device incorporating the same App 20030123197 - Mizuguchi, Tetsuya ; et al.	2003-07-03
Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head App 20010036046 - Mizuguchi, Tetsuya	2001-11-01
Magnetoresistance-effect element, magnetoresistance-effect magnetic head, and method of manufacturing a magnetoresistance-effect element App 20010033463 - Mizuguchi, Tetsuya	2001-10-25
Magnetoresistive-effect element App 20010021089 - Miyauchi, Teiichi ; et al.	2001-09-13
Spin-valve film, magnetoresistance-effect device and magnetoresistance-effect magnetic head Grant 6,287,709 - Mizuguchi September 11, 2	2001-09-11

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