Miyoshi; Yosuke

Patent Applications and Registrations

Patent applications and USPTO patent grants for Miyoshi; Yosuke.The latest application filed is for "heterojunction bipolar transistor and method of producing the same".

Company Profile

0.9.5

Miyoshi; Yosuke - Tokyo JP
Miyoshi; Yosuke - Kawasaki JP
Miyoshi, Yosuke - Kawasaki-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Heterojunction bipolar transistor and method of producing the same Grant 6,924,201 - Tanomura , et al. August 2, 2	2005-08-02
Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction Grant 6,723,664 - Matsumura , et al. April 20, 2	2004-04-20
Schottky gate field effect transistor Grant 6,717,192 - Miyoshi April 6, 2	2004-04-06
Heterojunction bipolar transistor and method of producing the same App 20030218187 - Tanomura, Masahiro ; et al.	2003-11-27
Schottky gate field effect transistor App 20030132463 - Miyoshi, Yosuke	2003-07-17
Field effect transistor App 20030006437 - Mizuta, Masashi ; et al.	2003-01-09
Field effect transistor Grant 6,483,135 - Mizuta , et al. November 19, 2	2002-11-19
Heterojunction bipolar transistor having prevention layer between base and emitter Grant 6,462,362 - Miyoshi October 8, 2	2002-10-08
Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction App 20020086557 - Matsumura, Hideki ; et al.	2002-07-04
Heterojunction bipolar transistor and method of producing the same App 20020066909 - Tanomura, Masahiro ; et al.	2002-06-06
Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction Grant 6,349,669 - Matsumura , et al. February 26, 2	2002-02-26
CVD apparatus Grant 6,325,857 - Miyoshi December 4, 2	2001-12-04
Catalytic deposition method for a semiconductor surface passivation film Grant 6,225,241 - Miyoshi May 1, 2	2001-05-01
Fet having non-overlapping field control electrode between gate and drain Grant 6,100,571 - Mizuta , et al. August 8, 2	2000-08-08

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