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Patent applications and USPTO patent grants for Miyazawa; Tomoe.The latest application filed is for "resist, barc and gap fill material stripping chemical and method".
Patent | Date |
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Resist, barc and gap fill material stripping chemical and method Grant 7,888,301 - Bernhard , et al. February 15, 2 | 2011-02-15 |
Resist, Barc and Gap Fill Material Stripping Chemical and Method App 20080006305 - Bernhard; David D. ;   et al. | 2008-01-10 |
Unsaturated dicarboxylic acid and ethylene urea containing formulation for cleaning semiconductor and cleaning method App 20070072782 - Miyazawa; Tomoe ;   et al. | 2007-03-29 |
Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer Grant 6,946,396 - Miyazawa , et al. September 20, 2 | 2005-09-20 |
Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer App 20050096237 - Miyazawa, Tomoe ;   et al. | 2005-05-05 |
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