Miyashita; Katsura

Patent Applications and Registrations

Patent applications and USPTO patent grants for Miyashita; Katsura.The latest application filed is for "two-way halo implant".

Company Profile

0.8.18

Miyashita; Katsura - Fishkill NY
Miyashita; Katsura - Kanagawa JP
Miyashita; Katsura - Naka-gun JP
Miyashita; Katsura - Fujisawa JP
Miyashita; Katsura - Fujisawa-shi JP
Miyashita, Katsura - New York NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Structures of SRAM bit cells Grant 8,158,472 - Miyashita April 17, 2	2012-04-17
Hybrid substrates and method of manufacture Grant 8,110,874 - Miyashita February 7, 2	2012-02-07
Two-way Halo Implant App 20110256674 - Miyashita; Katsura	2011-10-20
Structures Of SRAM Bit Cells App 20100314692 - Miyashita; Katsura	2010-12-16
Electrical fuse with metal silicide pipe under gate electrode Grant 7,820,492 - Miyashita , et al. October 26, 2	2010-10-26
Semiconductor Device And Method Of Fabricating The Same App 20100117163 - Miyashita; Katsura	2010-05-13
Reversely tapered contact structure compatible with dual stress liner process Grant 7,652,335 - Miyashita January 26, 2	2010-01-26
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same Grant 7,638,432 - Miyashita , et al. December 29, 2	2009-12-29
Hybrid Substrates and Method of Manufacture App 20090230432 - Miyashita; Katsura	2009-09-17
Generating Stress in a Field Effect Transistor App 20090224263 - Miyashita; Katsura	2009-09-10
Two-way Halo Implant App 20090224290 - Miyashita; Katsura	2009-09-10
Structures Of Sram Bit Cells App 20090189227 - Miyashita; Katsura	2009-07-30
Structures Of Sram Bit Cells App 20090189198 - Miyashita; Katsura	2009-07-30
Reversely Tapered Contact Structure Compatible With Dual Stress Liner Process App 20090101943 - Miyashita; Katsura	2009-04-23
Electrical Fuse With Metal Silicide Pipe Under Gate Electrode App 20080290456 - Miyashita; Katsura ; et al.	2008-11-27
Inter-Diffusion Barrier Structures for Dopants in Gate Electrodes, and Method for Manufacturing App 20080157215 - Miyashita; Katsura	2008-07-03
Electrical Fuse Having Resistor Materials Of Different Thermal Stability App 20080067629 - Miyashita; Katsura	2008-03-20
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same App 20070194382 - Miyashita; Katsura ; et al.	2007-08-23
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same Grant 7,220,672 - Miyashita , et al. May 22, 2	2007-05-22
Method of manufacturing semiconductor device App 20050186748 - Hasumi, Ryoji ; et al.	2005-08-25
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same App 20050158958 - Miyashita, Katsura ; et al.	2005-07-21
Semiconductor Device Comprising Metal Silicide Films Formed To Cover Gate Electrode And Source-drain Diffusion Layers And Method Of Manufacturing The Same Wherein The Silicide On Gate Is Thicker Than On Source-drain Grant 6,869,867 - Miyashita , et al. March 22, 2	2005-03-22
Method of manufacturing a MISFET having post oxide films having at least two kinds of thickness Grant 6,673,705 - Miyashita January 6, 2	2004-01-06
Semiconductor device including MISFET having post-oxide films having at least two kinds of thickness and method of manufacturing the same App 20020179944 - Miyashita, Katsura	2002-12-05
Semiconductor device including misfet having post-oxide films having at least two kinds of thickness and method of manufacturing the same App 20020000633 - Miyashita, Katsura	2002-01-03
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same App 20010045605 - Miyashita, Katsura ; et al.	2001-11-29

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