loadpatents
name:-0.017369031906128
name:-0.016182899475098
name:-0.0012590885162354
Miyasaka; Yasushi Patent Filings

Miyasaka; Yasushi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Miyasaka; Yasushi.The latest application filed is for "semiconductor device".

Company Profile
0.13.11
  • Miyasaka; Yasushi - Nagano JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor device
Grant 9,018,633 - Wakimoto , et al. April 28, 2
2015-04-28
Semiconductor Device
App 20140061672 - WAKIMOTO; Hiroki ;   et al.
2014-03-06
Temperature measurement device of power semiconductor device
Grant 7,507,023 - Oyabe , et al. March 24, 2
2009-03-24
Semiconductor device with a short-lifetime region and manufacturing method thereof
Grant 7,282,781 - Matsui , et al. October 16, 2
2007-10-16
Diode and method for manufacturing the same
Grant 7,276,771 - Fujihira , et al. October 2, 2
2007-10-02
Diode and method for manufacturing the same
Grant 7,187,054 - Fujihira , et al. March 6, 2
2007-03-06
Temperature measurement device of power semiconductor device
App 20060255361 - Oyabe; Kazunori ;   et al.
2006-11-16
Diode and method for manufacturing the same
App 20060244006 - Fujihira; Tatsuhiko ;   et al.
2006-11-02
Diode and method for manufacturing the same
Grant 7,112,865 - Fujihira , et al. September 26, 2
2006-09-26
Diode and method for manufacturing the same
Grant 6,975,013 - Fujihira , et al. December 13, 2
2005-12-13
Semiconductor device with a short-lifetime region and manufacturing method thereof
App 20050263842 - Matsui, Toshiyuki ;   et al.
2005-12-01
Diode and method for manufacturing the same
App 20050179105 - Fujihira, Tatsuhiko ;   et al.
2005-08-18
Diode and method for manufacturing the same
App 20050151219 - Fujihira, Tatsuhiko ;   et al.
2005-07-14
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
Grant 6,815,766 - Miyasaka , et al. November 9, 2
2004-11-09
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
Grant 6,787,420 - Miyasaka , et al. September 7, 2
2004-09-07
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
Grant 6,677,626 - Shindou , et al. January 13, 2
2004-01-13
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
Grant 6,673,679 - Miyasaka , et al. January 6, 2
2004-01-06
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
App 20030207536 - Miyasaka, Yasushi ;   et al.
2003-11-06
Diode and method for manufacturing the same
App 20030030120 - Fujihira, Tatsuhiko ;   et al.
2003-02-13
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
App 20010046739 - Miyasaka, Yasushi ;   et al.
2001-11-29
Diode and method for manufacturing the same
App 20010035560 - Fujihira, Tatsuhiko ;   et al.
2001-11-01
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
Grant 6,291,856 - Miyasaka , et al. September 18, 2
2001-09-18
Diode and method for manufacturing the same
App 20010017393 - Fujihira, Tatsuhiko ;   et al.
2001-08-30
Schottky barrier
Grant 6,175,143 - Fujihira , et al. January 16, 2
2001-01-16

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