loadpatents
name:-0.0089490413665771
name:-0.012453079223633
name:-0.00057005882263184
Miyakoshi; Nobuki Patent Filings

Miyakoshi; Nobuki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Miyakoshi; Nobuki.The latest application filed is for "method of manufacturing semiconductor device".

Company Profile
0.8.7
  • Miyakoshi; Nobuki - Saitama JP
  • Miyakoshi; Nobuki - Hanno JP
  • MIYAKOSHI; Nobuki - Hanno-shi Saitama
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method of manufacturing semiconductor device
Grant 10,714,346 - Miyakoshi
2020-07-14
Method Of Manufacturing Semiconductor Device
App 20190355582 - MIYAKOSHI; Nobuki
2019-11-21
Semiconductor device
Grant 9,960,267 - Miyakoshi May 1, 2
2018-05-01
Semiconductor device
Grant 9,287,393 - Miyakoshi March 15, 2
2016-03-15
Semiconductor Device
App 20150349114 - MIYAKOSHI; Nobuki
2015-12-03
Semiconductor device and method of manufacturing semiconductor device
Grant 9,196,722 - Miyakoshi , et al. November 24, 2
2015-11-24
Semiconductor Device
App 20150325691 - Miyakoshi; Nobuki
2015-11-12
Semiconductor Device And Method Of Manufacturing Semiconductor Device
App 20140312416 - MIYAKOSHI; Nobuki ;   et al.
2014-10-23
Semiconductor device and method for manufacturing the same
Grant 8,343,833 - Miyakoshi January 1, 2
2013-01-01
Semiconductor device and method for manufacturing the same
Grant 7,923,771 - Miyakoshi April 12, 2
2011-04-12
Semiconductor device and method for manufacturing the same
App 20110039382 - Miyakoshi; Nobuki
2011-02-17
Semiconductor Device And Method For Manufacturing The Same
App 20100013007 - Miyakoshi; Nobuki
2010-01-21
Field effect transistor with high withstand voltage and low resistance
Grant 6,635,926 - Miyakoshi , et al. October 21, 2
2003-10-21
Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer
Grant 6,563,169 - Miyakoshi , et al. May 13, 2
2003-05-13
Field effect transistor
App 20020024056 - Miyakoshi, Nobuki ;   et al.
2002-02-28

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