Patent | Date |
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Airbag apparatus Grant 11,225,217 - Kokubu , et al. January 18, 2 | 2022-01-18 |
Airbag Apparatus App 20200290550 - KOKUBU; Kenji ;   et al. | 2020-09-17 |
Semiconductor device having super junction structure and method for manufacturing the same Grant 9,368,575 - Miyajima June 14, 2 | 2016-06-14 |
Semiconductor Device Having Super Junction Structure And Method For Manufacturing The Same App 20140077289 - MIYAJIMA; Takeshi | 2014-03-20 |
Method for manufacturing a semiconductor device having super junction structure Grant 8,659,082 - Miyajima February 25, 2 | 2014-02-25 |
Semiconductor Device Having Super Junction Structure And Method For Manufacturing The Same App 20130157444 - MIYAJIMA; Takeshi | 2013-06-20 |
Semiconductor device having super junction structure and method for manufacturing the same Grant 8,421,154 - Miyajima April 16, 2 | 2013-04-16 |
Semiconductor Device Having Super Junction Structure And Method For Manufacturing The Same App 20120068298 - MIYAJIMA; Takeshi | 2012-03-22 |
Semiconductor device having super junction structure Grant 8,106,453 - Miyajima January 31, 2 | 2012-01-31 |
Semiconductor device and method for manufacturing the same Grant 8,018,028 - Miyajima September 13, 2 | 2011-09-13 |
Semiconductor device having heat radiating configuration Grant 8,008,768 - Miyajima August 30, 2 | 2011-08-30 |
Semiconductor Device Having Heat Radiating Configuration App 20110133328 - MIYAJIMA; Takeshi | 2011-06-09 |
Semiconductor Device And Method For Manufacturing The Same App 20110095303 - MIYAJIMA; Takeshi | 2011-04-28 |
Semiconductor device and method of manufacturing the same Grant 7,932,132 - Miyajima April 26, 2 | 2011-04-26 |
Semiconductor device and method for manufacturing the same Grant 7,910,411 - Miyajima March 22, 2 | 2011-03-22 |
Method for manufacturing a vertical transistor that includes a super junction structure Grant 7,858,475 - Yamaguchi , et al. December 28, 2 | 2010-12-28 |
Method For Manufacturing Semiconductor Device App 20100112765 - Yamaguchi; Hitoshi ;   et al. | 2010-05-06 |
Method for manufacturing a vertical transistor that includes a super junction structure Grant 7,635,622 - Yamaguchi , et al. December 22, 2 | 2009-12-22 |
Semiconductor device and method of manufacturing the same App 20090227070 - Miyajima; Takeshi | 2009-09-10 |
Semiconducotor device and method for manufacturing the same App 20080173935 - Miyajima; Takeshi | 2008-07-24 |
Method for manufacturing semiconductor device App 20080038850 - Yamaguchi; Hitoshi ;   et al. | 2008-02-14 |
Semiconductor device having super junction structure and method for manufacturing the same App 20070177444 - Miyajima; Takeshi | 2007-08-02 |
Semiconductor device and method for manufacturing the same Grant 6,809,348 - Suzuki , et al. October 26, 2 | 2004-10-26 |
Semiconductor device having radiation structure App 20040097082 - Mamitsu, Kuniaki ;   et al. | 2004-05-20 |
Semiconductor device having radiation structure App 20040089941 - Mamitsu, Kuniaki ;   et al. | 2004-05-13 |
Semiconductor device having radiation structure Grant 6,703,707 - Mamitsu , et al. March 9, 2 | 2004-03-09 |
Method for forming and patterning film Grant 6,548,386 - Kondo , et al. April 15, 2 | 2003-04-15 |
Semiconductor device and manufacturing method of the same App 20020063300 - Miyajima, Takeshi | 2002-05-30 |
Silicon carbide semiconductor device and process for manufacturing same Grant 6,133,587 - Takeuchi , et al. October 17, 2 | 2000-10-17 |
Silicon carbide semiconductor device with trench Grant 6,020,600 - Miyajima , et al. February 1, 2 | 2000-02-01 |
Manufacturing method of semiconductor device with a groove Grant 5,998,268 - Tomatsu , et al. December 7, 1 | 1999-12-07 |
Silicon carbide semiconductor device Grant 5,976,936 - Miyajima , et al. November 2, 1 | 1999-11-02 |
Process for producing a semiconductor device having a single thermal oxidizing step Grant 5,915,180 - Hara , et al. June 22, 1 | 1999-06-22 |
Silicon carbide semiconductor device and process for its production Grant 5,744,826 - Takeuchi , et al. April 28, 1 | 1998-04-28 |
Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects Grant 5,723,376 - Takeuchi , et al. March 3, 1 | 1998-03-03 |
Semiconductor device including vertical MOSFET structure with suppressed parasitic diode operation Grant 5,696,396 - Tokura , et al. December 9, 1 | 1997-12-09 |
Ultrasonic method for measurement of depth of surface opening flaw in solid mass Grant 5,005,420 - Miyajima April 9, 1 | 1991-04-09 |
Facedown-type semiconductor pressure sensor with spacer Grant 4,881,056 - Mizukoshi , et al. November 14, 1 | 1989-11-14 |