Miura; Yoshiki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Miura; Yoshiki.The latest application filed is for "method of manufacturing gan substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer".

Company Profile

0.16.11

Miura; Yoshiki - Itami N/A JP
Miura; Yoshiki - Itami-shi JP
Miura; Yoshiki - Hyogo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer Grant 8,471,264 - Nakanishi , et al. June 25, 2	2013-06-25
Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same Grant 8,143,140 - Kasai , et al. March 27, 2	2012-03-27
METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPITAXIALWAFER, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND EPITAXIALWAFER App 20110163325 - NAKANISHI; Fumitake ; et al.	2011-07-07
Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer Grant 7,932,114 - Nakanishi , et al. April 26, 2	2011-04-26
Gallium nitride substrate and gallium nitride layer formation method Grant 7,915,149 - Nakahata , et al. March 29, 2	2011-03-29
Semiconductor light-emitting element and substrate used in formation of the same Grant 7,915,635 - Akita , et al. March 29, 2	2011-03-29
Gallium nitride baseplate and epitaxial substrate Grant 7,843,040 - Koukitu , et al. November 30, 2	2010-11-30
GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate Grant 7,816,238 - Osada , et al. October 19, 2	2010-10-19
SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME App 20100210089 - KASAI; Hitoshi ; et al.	2010-08-19
Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same Grant 7,728,348 - Kasai , et al. June 1, 2	2010-06-01
Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride Grant 7,518,216 - Koukitu , et al. April 14, 2	2009-04-14
METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPITAXIALWAFER, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND EPITAXIALWAFER App 20090093077 - NAKANISHI; Fumitake ; et al.	2009-04-09
Gallium Nitride Baseplate and Epitaxial Substrate App 20090079036 - Koukitu; Akinori ; et al.	2009-03-26
Gallium Nitride Substrate And Gallium Nitride Layer Formation Method App 20080308814 - NAKAHATA; Seiji ; et al.	2008-12-18
GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Device, and GaN Substrate Manufacturing Method App 20080308815 - Kasai; Hitoshi ; et al.	2008-12-18
GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GaN SUBSTRATE App 20080308906 - OSADA; Hideki ; et al.	2008-12-18
Method Of Manufacturing Semiconductor Light-emitting Element App 20080299694 - AKITA; Katsushi ; et al.	2008-12-04
Semiconductor Light-emitting Element And Substrate Used In Formation Of The Same App 20080296610 - AKITA; Katsushi ; et al.	2008-12-04
Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same App 20080169483 - Kasai; Hitoshi ; et al.	2008-07-17
Gallium Nitride Baseplate, Epitaxial Substrate, and Method of Forming Gallium Nitride App 20070215982 - Koukitu; Akinori ; et al.	2007-09-20
Method of making group III-V compound semiconductor wafer Grant 6,294,019 - Miura , et al. September 25, 2	2001-09-25
Light emitting device, wafer for light emitting device, and method of preparing the same Grant 5,962,875 - Motoki , et al. October 5, 1	1999-10-05
Light emitting device, wafer for light emitting device, and method of preparing the same Grant 5,834,325 - Motoki , et al. November 10, 1	1998-11-10
Compound semiconductor light emitting device and method of preparing the same Grant 5,756,374 - Miura , et al. May 26, 1	1998-05-26
Compound semiconductor light emitting device and method of preparing the same Grant 5,665,986 - Miura , et al. September 9, 1	1997-09-09
Compound semiconductor wafer with defects propagating prevention means Grant 5,212,394 - Iwasaki , et al. May 18, 1	1993-05-18

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