Miura; Kouhei

Patent Applications and Registrations

Patent applications and USPTO patent grants for Miura; Kouhei.The latest application filed is for "semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor wafer".

Company Profile

0.12.12

Miura; Kouhei - Osaka N/A JP
Miura; Kouhei - Osaka-shi JP
Miura; Kouhei - Itami JP
Miura, Kouhei - Itami-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Detection device, photodiode array, and method for manufacturing the same Grant 8,969,851 - Inada , et al. March 3, 2	2015-03-03
Semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor wafer Grant 8,642,943 - Mori , et al. February 4, 2	2014-02-04
Group III nitride semiconductor device and epitaxial substrate Grant 8,410,524 - Tanabe , et al. April 2, 2	2013-04-02
Semiconductor Wafer, Light-receiving Element, Light-receiving Element Array, Hybrid-type Detection Device, Optical Sensor Device, And Process For Production Of Semiconductor Wafer App 20130048838 - Mori; Hiroki ; et al.	2013-02-28
Detection Device, Photodiode Array, And Method For Manufacturing The Same App 20110147707 - INADA; Hiroshi ; et al.	2011-06-23
High electron mobility transistor, field-effect transistor, and epitaxial substrate Grant 7,884,393 - Hashimoto , et al. February 8, 2	2011-02-08
Photodetector and production method thereof Grant 7,875,906 - Nagai , et al. January 25, 2	2011-01-25
Vertical gallium nitride semiconductor device and epitaxial substrate Grant 7,872,285 - Hashimoto , et al. January 18, 2	2011-01-18
High Electron Mobility Transistor, Field-Effect Transistor, and Epitaxial Substrate App 20100230723 - Hashimoto; Shin ; et al.	2010-09-16
Group III nitride semiconductor device and epitaxial substrate Grant 7,763,892 - Miura , et al. July 27, 2	2010-07-27
Method of manufacturing group III Nitride Transistor Grant 7,749,828 - Hashimoto , et al. July 6, 2	2010-07-06
Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate App 20090194796 - Hashimoto; Shin ; et al.	2009-08-06
Group III Nitride Semiconductor Device and Epitaxial Substrate App 20090189186 - Tanabe; Tatsuya ; et al.	2009-07-30
High Electron Mobility Transistor, Field-Effect Transistor, Epitaxial Substrate, Method of Manufacturing Epitaxial Substrate, and Method of Manufacturing Group III Nitride Transistor App 20090189190 - Hashimoto; Shin ; et al.	2009-07-30
Semiconductor Device, Epitaxial Wafer, And Method Of Manufacturing The Same App 20090057721 - Miura; Kouhei ; et al.	2009-03-05
Photodetector And Production Method Thereof App 20090001412 - Nagai; Youichi ; et al.	2009-01-01
Group III Nitride Semiconductor Device and Epitaxial Substrate App 20080315209 - Miura; Kouhei ; et al.	2008-12-25
Group III Nitride Semiconductor Device and Epitaxial Substrate App 20080265258 - Tanabe; Tatsuya ; et al.	2008-10-30
GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same Grant 7,387,678 - Akita , et al. June 17, 2	2008-06-17
GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same App 20040262624 - Akita, Katsushi ; et al.	2004-12-30

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