Miura; Hirotomo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Miura; Hirotomo.The latest application filed is for "method of making a polycide interconnection layer having a silicide film formed on a polycrystal silicon for a semiconductor device".

Company Profile

0.8.2

Miura; Hirotomo - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of making a polycide interconnection layer having a silicide film formed on a polycrystal silicon for a semiconductor device Grant 6,800,911 - Miura October 5, 2	2004-10-05
Multi-level type nonvolatile semiconductor memory device Grant 6,649,542 - Miura , et al. November 18, 2	2003-11-18
Method of making a polycide interconnection layer having a silicide film formed on a polycrystal silicon for a semiconductor device App 20030205769 - Miura, Hirotomo	2003-11-06
Multi-level type nonvolatile semiconductor memory device Grant 6,605,839 - Miura , et al. August 12, 2	2003-08-12
Method For Fabricating A Semiconductor Device Having A Impurity Layer Disposed Between A Non-doped Silicon Film And High Melting-point Metal Film For Reducing Solid State Reaction Between Said High Melting-point Metal Film And Polycrystal Silicon Film Grant 6,596,567 - Miura July 22, 2	2003-07-22
Method of making multi-level type non-volatile semiconductor memory device Grant 6,596,590 - Miura , et al. July 22, 2	2003-07-22
Multi-level type nonvolatile semiconductor memory device App 20020145161 - Miura, Hirotomo ; et al.	2002-10-10
Multi-level type nonvolatile semiconductor memory device Grant 6,285,596 - Miura , et al. September 4, 2	2001-09-04
Semiconductor structure provided with a polycide interconnection layer having a silicide film formed on a polycrystal silicon film Grant 6,208,003 - Miura March 27, 2	2001-03-27
Input protective circuit having a diffusion resistance layer Grant 5,932,917 - Miura August 3, 1	1999-08-03

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