| Patent | Date |
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Lightly doped silicon carbide wafer and use thereof in high power devices
Grant 8,803,160 - Ellison , et al. August 12, 2 | 2014-08-12 |
Lightly Doped Silicon Carbide Wafer And Use Thereof In High Power Devices
App 20120091471 - ELLISON; Alexandre ; et al. | 2012-04-19 |
Lightly doped silicon carbide wafer and use thereof in high power devices
Grant 8,097,524 - Ellison , et al. January 17, 2 | 2012-01-17 |
Method for making an integrated circuit including vertical junction field effect transistors
Grant 7,763,506 - Treu , et al. July 27, 2 | 2010-07-27 |
Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure
Grant 7,615,802 - Elpelt , et al. November 10, 2 | 2009-11-10 |
Lightly Doped Silicon Carbide Wafer And Use Thereof In High Power Devices
App 20090114924 - Ellison; Alexandre ; et al. | 2009-05-07 |
Method For Making An Integrated Circuit Including Vertical Junction Field Effect Transistors
App 20090068803 - Treu; Michael ; et al. | 2009-03-12 |
Lightly doped silicon carbide wafer and use thereof in high power devices
Grant 7,482,068 - Ellison , et al. January 27, 2 | 2009-01-27 |
Electronic switching device
Grant 7,206,178 - Friedrichs , et al. April 17, 2 | 2007-04-17 |
Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure
App 20060255373 - Elpelt; Rudolf ; et al. | 2006-11-16 |
Electronic switching device and an operating method thereof
Grant 7,082,020 - Friedrichs , et al. July 25, 2 | 2006-07-25 |
Semiconductor structure with a switch element and an edge element
Grant 7,071,503 - Dohnke , et al. July 4, 2 | 2006-07-04 |
Lightly doped silicon carbide wafer and use thereof in high power devices
App 20060137600 - Ellison; Alexandre ; et al. | 2006-06-29 |
Semiconductor structure with a switch element and an edge element
App 20050062112 - Dohnke, Karl ; et al. | 2005-03-24 |
Vertical semiconductor component having a reduced electrical surface field
Grant 6,847,091 - Deboy , et al. January 25, 2 | 2005-01-25 |
Switching device for switching at a high operating voltage
Grant 6,822,842 - Friedrichs , et al. November 23, 2 | 2004-11-23 |
Electronic switching device and an operating method thereof
App 20040047098 - Friedrichs, Peter ; et al. | 2004-03-11 |
Semiconductor construction with buried island region and contact region
Grant 6,693,322 - Friedrichs , et al. February 17, 2 | 2004-02-17 |
Junction field-effect transistor with more highly doped connecting region
Grant 6,693,314 - Mitlehner , et al. February 17, 2 | 2004-02-17 |
Electronic switching device
App 20040027753 - Friedrichs, Peter ; et al. | 2004-02-12 |
Protection device for low voltage networks
Grant 6,665,591 - Griepentrog , et al. December 16, 2 | 2003-12-16 |
J-FET semiconductor configuration
Grant 6,653,666 - Mitlehner , et al. November 25, 2 | 2003-11-25 |
Hybrid power MOSFET
Grant 6,633,195 - Baudelot , et al. October 14, 2 | 2003-10-14 |
Switching device for switching at a high operating voltage
App 20030168919 - Friedrichs, Peter ; et al. | 2003-09-11 |
Method and device for disconnecting a cascode circuit with voltage-controlled semiconductor switches
Grant 6,614,281 - Baudelot , et al. September 2, 2 | 2003-09-02 |
Semiconductor construction with buried island region and contact region
App 20030137010 - Friedrichs, Peter ; et al. | 2003-07-24 |
Hybrid power MOSFET for high current-carrying capacity
Grant 6,535,050 - Baudelot , et al. March 18, 2 | 2003-03-18 |
Hybrid power MOSFET
App 20020153938 - Baudelot, Eric ; et al. | 2002-10-24 |
Semiconductor configuration and current limiting device
Grant 6,459,108 - Bartsch , et al. October 1, 2 | 2002-10-01 |
Semiconductor product with a Schottky contact
App 20020109200 - Bartsch, Wolfgang ; et al. | 2002-08-15 |
Method for reducing losses during the commutation process
Grant 6,434,019 - Baudelot , et al. August 13, 2 | 2002-08-13 |
Integrated semiconductor device having a lateral power element
App 20020070412 - Mitlehner, Heinz ; et al. | 2002-06-13 |
Semiconductor component
Grant 6,388,271 - Mitlehner , et al. May 14, 2 | 2002-05-14 |
Electronic switching device having at least two semiconductor components
Grant 6,373,318 - Dohnke , et al. April 16, 2 | 2002-04-16 |
Silicon carbide junction field effect transistor
Grant 6,365,919 - Tihanyi , et al. April 2, 2 | 2002-04-02 |
J-FET semiconductor configuration
App 20020020849 - Mitlehner, Heinz ; et al. | 2002-02-21 |
Junction field-effect transistor with more highly doped connecting region
App 20020014640 - Mitlehner, Heinz ; et al. | 2002-02-07 |
Method and apparatus for balancing the power losses in a number of parallel-connected cascode circuits
App 20010054848 - Baudelot, Eric ; et al. | 2001-12-27 |
Hybrid power MOSFET for high current-carrying capacity
App 20010050589 - Baudelot, Eric ; et al. | 2001-12-13 |
Method for reducing losses during the commutation process
App 20010040813 - Baudelot, Eric ; et al. | 2001-11-15 |
Electronic switching device having at least two semiconductor components
App 20010024138 - Dohnke, Karl-Otto ; et al. | 2001-09-27 |
Vertical semiconductor component having a reduced electrical surface field
App 20010020732 - Deboy, Gerald ; et al. | 2001-09-13 |
Nonlinear current limiting precharging circuit for a capacitor connected to an output of a line-commutated power converter
Grant 6,275,393 - Baudelot , et al. August 14, 2 | 2001-08-14 |
Switching device
Grant 6,215,632 - Kaluza , et al. April 10, 2 | 2001-04-10 |
Electronic device, in particular for switching electric currents, for high reverse voltages and with low on-state losses
Grant 6,157,049 - Mitlehner , et al. December 5, 2 | 2000-12-05 |
Current-limiting semiconductor configuration
Grant 6,034,385 - Stephani , et al. March 7, 2 | 2000-03-07 |
Semiconductor component having an edge termination means with high field blocking capability
Grant 5,712,502 - Mitlehner , et al. January 27, 1 | 1998-01-27 |
Schottky power diode
Grant 4,680,601 - Mitlehner , et al. July 14, 1 | 1987-07-14 |
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