loadpatents
name:-0.0076920986175537
name:-0.0059280395507812
name:-0.00047397613525391
Mitard; Jerome Patent Filings

Mitard; Jerome

Patent Applications and Registrations

Patent applications and USPTO patent grants for Mitard; Jerome.The latest application filed is for "method of forming nanowires".

Company Profile
0.4.6
  • Mitard; Jerome - Bossut-Gottechain BE
  • Mitard; Jerome - Bossut-Gottenchain BE
  • Mitard; Jerome - Tourinnes-la-Grosse BE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Gate-all-around nanowire device and method for manufacturing such a device
Grant 9,991,261 - Mitard June 5, 2
2018-06-05
Method Of Forming Nanowires
App 20180108526 - Mitard; Jerome
2018-04-19
Gate-all-around Nanowire Device And Method For Manufacturing Such A Device
App 20170040321 - Mitard; Jerome
2017-02-09
Method for providing an NMOS device and a PMOS device on a silicon substrate and silicon substrate comprising an NMOS device and a PMOS device
Grant 9,502,415 - Loo , et al. November 22, 2
2016-11-22
Method for forming a germanium channel layer for an NMOS transistor device, NMOS transistor device and CMOS device
Grant 9,478,544 - Mitard , et al. October 25, 2
2016-10-25
Method For Forming A Germanium Channel Layer For An Nmos Transistor Device, Nmos Transistor Device And Cmos Device
App 20160027780 - Mitard; Jerome ;   et al.
2016-01-28
Method For Providing An Nmos Device And A Pmos Device On A Silicon Substrate And Silicon Substrate Comprising An Nmos Device And A Pmos Device
App 20160027779 - Loo; Roger ;   et al.
2016-01-28
Complementary metal-oxide-semiconductor device comprising silicon and germanium and method for manufacturing thereof
Grant 9,123,566 - Mitard , et al. September 1, 2
2015-09-01
Complementary Metal-Oxide-Semiconductor Device Comprising Silicon and Germanium and Method for Manufacturing Thereof
App 20140008730 - Mitard; Jerome ;   et al.
2014-01-09
Method For Manufacturing A Field-effect Semiconductor Device Following A Replacement Gate Process
App 20130181301 - Witters; Liesbeth ;   et al.
2013-07-18

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