loadpatents
name:-0.0049331188201904
name:-0.0073511600494385
name:-0.0039269924163818
MITAN; Martin M. Patent Filings

MITAN; Martin M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for MITAN; Martin M..The latest application filed is for "plasma nitridation for gate oxide scaling of ge and sige transistors".

Company Profile
3.4.9
  • MITAN; Martin M. - Beaverton OR
  • Mitan; Martin M. - Hillsboro OR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Plasma Nitridation For Gate Oxide Scaling Of Ge And Sige Transistors
App 20210408239 - CHOUKSEY; Siddharth ;   et al.
2021-12-30
Selective Gate Spacers For Semiconductor Devices
App 20210143265 - Clendenning; Scott B. ;   et al.
2021-05-13
Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping
Grant 10,998,423 - Le , et al. May 4, 2
2021-05-04
Selective gate spacers for semiconductor devices
Grant 10,971,600 - Clendenning , et al. April 6, 2
2021-04-06
Self-aligned Gate Endcap (sage) Architectures Without Fin End Gap
App 20210091075 - LIAO; Szuya S. ;   et al.
2021-03-25
Channel Formation For Three Dimensional Transistors
App 20200411697 - KU; Chieh-Jen ;   et al.
2020-12-31
Fabrication Of Multi-channel Nanowire Devices With Self-aligned Internal Spacers And Soi Finfets Using Selective Silicon Nitride
App 20200287022 - LE; Van H. ;   et al.
2020-09-10
Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping
Grant 10,720,508 - Le , et al.
2020-07-21
Selective Gate Spacers For Semiconductor Devices
App 20200020786 - Clendenning; Scott B. ;   et al.
2020-01-16
Selective gate spacers for semiconductor devices
Grant 10,396,176 - Clendenning , et al. A
2019-08-27
Fabrication Of Multi-channel Nanowire Devices With Self-aligned Internal Spacers And Soi Finfets Using Selective Silicon Nitride Capping
App 20180226490 - LE; Van H. ;   et al.
2018-08-09
Selective Gate Spacers For Semiconductor Devices
App 20180219080 - CLENDENNING; Scott B. ;   et al.
2018-08-02
Bottom-up Fill (buf) Of Metal Features For Semiconductor Structures
App 20180130707 - CLENDENNING; Scott B. ;   et al.
2018-05-10

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