Mishima; Tomoyoshi
Patent Applications and Registrations
Patent applications and USPTO patent grants for Mishima; Tomoyoshi.The latest application filed is for "crystal laminate, semiconductor device and method for manufacturing the same".
- Mishima; Tomoyoshi - Tokyo JP
- Mishima; Tomoyoshi - Koganei JP
- MISHIMA; Tomoyoshi - Koganei-shi JP
- Mishima; Tomoyoshi - Shiki JP
- MISHIMA; Tomoyoshi - Hitachi JP
- MISHIMA; Tomoyoshi - Shiki-shi JP
| Patent | Date |
|---|---|
| Gallium nitride laminated substrate and semiconductor device Grant 10,998,188 - Mishima , et al. May 4, 2 | 2021-05-04 |
| Semiconductor device and method for manufacturing the same Grant 10,797,181 - Mishima , et al. October 6, 2 | 2020-10-06 |
| Crystal Laminate, Semiconductor Device And Method For Manufacturing The Same App 20200227262 - HORIKIRI; Fumimasa ; et al. | 2020-07-16 |
| Semiconductor device Grant 10,685,841 - Nakamura , et al. | 2020-06-16 |
| Manufacturing Method And Inspection Method Of Group-iii Nitride Laminate, And Group-iii Nitride Laminate App 20200091016 - HORIKIRI; Fumimasa ; et al. | 2020-03-19 |
| Semiconductor device Grant 10,483,350 - Nakamura , et al. Nov | 2019-11-19 |
| Gallium Nitride Laminated Substrate And Semiconductor Device App 20190348276 - MISHIMA; Tomoyoshi ; et al. | 2019-11-14 |
| Semiconductor Device And Method For Manufacturing The Same App 20190189808 - MISHIMA; Tomoyoshi ; et al. | 2019-06-20 |
| Semiconductor Device App 20190181010 - NAKAMURA; Tohru ; et al. | 2019-06-13 |
| Semiconductor Device App 20180261667 - NAKAMURA; Tohru ; et al. | 2018-09-13 |
| Semiconductor multilayer structure and method of manufacturing the same Grant 9,899,570 - Kaneda , et al. February 20, 2 | 2018-02-20 |
| Semiconductor Multilayer Structure And Method Of Manufacturing The Same App 20170141270 - KANEDA; Naoki ; et al. | 2017-05-18 |
| Nitride semiconductor device and method of manufacturing the same Grant 9,530,858 - Terano , et al. December 27, 2 | 2016-12-27 |
| Nitride Semiconductor Device and Method of Manufacturing the Same App 20150179780 - TERANO; Akihisa ; et al. | 2015-06-25 |
| Nitride semiconductor element and method of manufacturing the same Grant 9,059,328 - Terano , et al. June 16, 2 | 2015-06-16 |
| Gallium nitride rectifying device Grant 8,835,930 - Tsuchiya , et al. September 16, 2 | 2014-09-16 |
| Nitride Semicondutor Device App 20140191369 - TSUCHIYA; Tadayoshi ; et al. | 2014-07-10 |
| Nitride Semiconductor Element and Method of Manufacturing the Same App 20140117376 - TERANO; Akihisa ; et al. | 2014-05-01 |
| Gallium Nitride Rectifying Device App 20130001585 - TSUCHIYA; Tadayoshi ; et al. | 2013-01-03 |
| Semiconductor Diode App 20120313108 - TSUCHIYA; Tadayoshi ; et al. | 2012-12-13 |
| Field-effect transistor and method of making same Grant 7,786,509 - Mishima , et al. August 31, 2 | 2010-08-31 |
| Semiconductor Integrated Circuit Device And Semiconductor Switching Device Using Thereof App 20090026499 - Kikawa; Takeshi ; et al. | 2009-01-29 |
| Field-effect transistor and method of making same App 20090001423 - Mishima; Tomoyoshi ; et al. | 2009-01-01 |
| Module for optical transmitter Grant 6,735,353 - Hirata , et al. May 11, 2 | 2004-05-11 |
| Semiconductor laser and photo module using the same Grant 6,728,283 - Kudo , et al. April 27, 2 | 2004-04-27 |
| Module for optical transmitter App 20030142928 - Hirata, Koji ; et al. | 2003-07-31 |
| Compound semiconductor device, method for producing thereof and high frequency module using thereof App 20030132496 - Terano, Akihisa ; et al. | 2003-07-17 |
| Semiconductor laser and photo module using the same App 20030086461 - Kudo, Makoto ; et al. | 2003-05-08 |
| Semiconductor device and electronic device using the same App 20030062538 - Kudo, Makoto ; et al. | 2003-04-03 |
| Fet (field effect transistor) and high frequency module App 20020149032 - Ouchi, Kiyoshi ; et al. | 2002-10-17 |
| Lattice-mismatched crystal structures and semiconductor device using the same Grant 5,633,516 - Mishima , et al. May 27, 1 | 1997-05-27 |
| Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate Grant 4,835,583 - Morioka , et al. May 30, 1 | 1989-05-30 |
| Heterojunction FET with doubly-doped channel Grant 4,673,959 - Shiraki , et al. June 16, 1 | 1987-06-16 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.
| 