Misawa; Yutaka

Patent Applications and Registrations

Patent applications and USPTO patent grants for Misawa; Yutaka.The latest application filed is for "method for forming and anti-reflection film of a cathode-ray tube, an apparatus used for carrying out the method and a cathode-ray tube having the anti-reflection film".

Company Profile

0.17.0

Misawa; Yutaka - Katsuta JP
Misawa; Yutaka - Hitachi JP
Misawa; Yutaka - Hitachi-shi JA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for forming and anti-reflection film of a cathode-ray tube, an apparatus used for carrying out the method and a cathode-ray tube having the anti-reflection film Grant 5,817,421 - Oishi , et al. October 6, 1	1998-10-06
Method for forming an anti-reflection film of a cathode-ray tube, an apparatus used for carrying out the method and a cathode-ray tube having the anti-reflection film Grant 5,449,534 - Oishi , et al. September 12, 1	1995-09-12
Electron microscope specimen holder Grant 5,367,171 - Aoyama , et al. November 22, 1	1994-11-22
Analytical electron microscope and a method of operating such an electron microscope Grant 5,350,921 - Aoyama , et al. September 27, 1	1994-09-27
Apparatus for liquid chromatography for separating AIC components from hemoglobin in blood Grant 5,294,336 - Mizuno , et al. March 15, 1	1994-03-15
Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof Grant 5,096,882 - Kato , et al. March 17, 1	1992-03-17
Laminar structure comprising organic material and inorganic material Grant 5,084,355 - Takahashi , et al. January 28, 1	1992-01-28
Thin film transistor formed on insulating substrate Grant 4,954,855 - Mimura , et al. September 4, 1	1990-09-04
Semiconductor device Grant 4,794,445 - Homma , et al. December 27, 1	1988-12-27
Method of fabricating bipolar transistors and insulated gate field effect transistors having doped polycrystalline silicon conductors Grant 4,735,916 - Homma , et al. April 5, 1	1988-04-05
pn Junction device with glass moats and a channel stopper region of greater depth than the base pn junction depth Grant 4,484,214 - Misawa , et al. November 20, 1	1984-11-20
Semiconductor absolute pressure transducer assembly and method Grant 4,295,115 - Takahashi , et al. October 13, 1	1981-10-13
Method of diffusing aluminum into silicon substrate for manufacturing semiconductor device Grant 4,154,632 - Mochizuki , et al. May 15, 1	1979-05-15
High withstand voltage-semiconductor device with shallow grooves between semiconductor region and field limiting rings Grant 3,994,011 - Misawa , et al. November 23, 1	1976-11-23
High withstand voltage semiconductor device with shallow grooves between semiconductor region and field limiting rings with outer mesa groove Grant 3,984,859 - Misawa , et al. October 5, 1	1976-10-05
Method of producing a semiconductor device Grant 3,913,217 - Misawa , et al. October 21, 1	1975-10-21
Semiconductor Device Having A Composite Film As A Passivating Film Grant 3,745,428 - Misawa , et al. July 10, 1	1973-07-10

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